We2F: High Performance Power Amplifiers for Modern Communication Systems

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Wed 10 Jun | 10:10 - 11:50
153AB
Sushil Kumar
Emerson Test and Measurement
Hamhee Jeon
California State Polytechnic University Pomona
This session presents state-of-the-art developments in high-efficiency power amplification, focusing on advanced GaN, GaAs, and switched-capacitor architectures for Ku-band and 6G FR3 applications. The featured papers explore sophisticated techniques for bandwidth extension and linearity enhancement, including a broadband GaN Doherty Power Amplifier (DPA) utilizing relative input phase compensation and a continuous-mode harmonic-tuning MMIC DPA achieving an 18.7% fractional bandwidth. Innovations in non-reciprocal and phase-control circuits are highlighted through a vector-sum phase shifter for analog pre-distortion in GaAs HBT and a GaN-on-Si DPA employing a differential power combiner for enhanced performance in the FR3 band. The session concludes with a digital-intensive Intra-Cell IQ Generation SCPA that leverages time-domain charge redistribution to achieve high drain efficiency, collectively demonstrating diverse semiconductor strategies to meet the stringent requirements of next-generation wireless systems.
10:10 - 10:30
We2F-1 A 16.5 to 23.1 GHz High Efficiency Broadband GaN Doherty Power Amplifier utilizing Relative Input Phase Compensation Circuit
ABSTRACT
Keigo Nakatani, Takuma Torii, Ryuji Inagaki, Akihito Hirai
Mitsubishi Electric Corp., Mitsubishi Electric Corp., Mitsubishi Electric Corp., Mitsubishi Electric Corp.
10:30 - 10:50
We2F-2 A Continuous-Mode Harmonic-Tuning Ku-Band GaN MMIC Doherty Power Amplifier with an 18.7 % Fractional Bandwidth
ABSTRACT
Po-Yu Lee, Yu-Hsiang Shang, Hsin-Chieh Lin, Yin-Cheng Chang, Da-Chiang Chang, Shawn S. H. Hsu
National Tsing Hua Univ., National Tsing Hua Univ., Taiwan Semiconductor Research Institute, National Institutes of Applied Research, Taiwan Semiconductor Research Institute, National Institutes of Applied Research, Taiwan Semiconductor Research Institute, National Institutes of Applied Research, National Tsing Hua Univ.
10:50 - 11:10
We2F-3 Vector-Sum Phase Shifter Design for Analog Predistortion in an FR3 Band Power Amplifier Using GaAs HBT
ABSTRACT
Shun Beppu, Daisuke Araki, Takashi Soga, Kiichiro Takenaka, Masatoshi Hase, Satoshi Goto, Hisashi Yamazaki
Murata Manufacturing Co., Ltd., Murata Manufacturing Co., Ltd., Murata Manufacturing Co., Ltd., Murata Manufacturing Co., Ltd., Murata Manufacturing Co., Ltd., Murata Manufacturing Co., Ltd., Murata Manufacturing Co., Ltd.
11:10 - 11:30
We2F-4 Ku-Band Doherty Power Amplifier with Differential Power Combiner in an Advanced GaN-on-Si HEMT Technology for 6G FR3 Applications
ABSTRACT
Abdolhamid Noori, Jorge Julian Moreno Rubio, Christoph Wagner, Christian Fager, Gregor Lasser
Silicon Austria Labs, Universidad Pedagógica y Tecnologica de Colombia, Silicon Austria Labs, Chalmers Univ. of Technology, Chalmers Univ. of Technology
11:30 - 11:50
We2F-5 A 29.6 dBm, 47.96% DE Intra-Cell IQ Generation SCPA Using Time-Domain Charge Redistribution
ABSTRACT
Jiayi Zhao, Hongxin Tang, Xun Luo
Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Shenzhen Univ.