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Th2D-3: A Wideband Digital Compensation Model Based on Fast Bandwidth Sensing for Zero-IF Receiver
Zero-IF transceiver systems use digital compensation techniques to mitigate communication distortions and improve performance. However, receiver compensation models generally struggle to simultaneousl...
Th2D-4: Cross-Spectrum Phase Noise Measurements of 10-15-Level Stability Photonic Microwave Oscillators
We present in this paper the characterization of state-of-the-art photonic microwave oscillators by using a commercial cross-correlation-based phase noise analyzer and two auxiliary commercial oscilla...
Th2F-1: KEYNOTE: InP HBT Technologies for Integrated Circuit Development of Efficient mm-Wave and THz Power Amplifiers and Sources
InP heterojunction bipolar transistor (HBT) technologies have significant power gain at frequencies greater than 100-GHz. Power amplifiers and integrated circuits have been demonstrated with state-of-...
Th2F-2: 300-GHz-Band InP HBT Power Amplifier Module Enabling 280-Gbps 0-dBm Signal Generation with Digital Predistortion
This paper presents a 300-GHz-band power amplifier (PA) module implementing a PA integrated circuit (IC) fabricated in 250-nm indium phosphide (InP) double-heterojunction bipolar transistor (DHBT) tec...
Th2F-3: 300GHz 8×1 Active Phased Array MMIC with On-Chip Power Amplifiers, Vector Modulators, and Antennas
This paper reports on an eight-channel active phased array monolithic microwave integrated circuit (MMIC) which includes on-chip vector modulators, power amplifiers, and antennas, all operating around...
Th2F-4: 208GHz InP Distributed Amplifier with Combining Loss Reduction Techniques
This paper introduces a wideband distributed amplifier (DA) using Indium Phosphide (InP) heterojunction bipolar transistor (HBT) technology that achieves a 208 GHz bandwidth. The DA comprises eight un...
Th2F-5: A Broadband InP Darlington Amplifier with Two-Way Distributed Power Combining
This paper presents a broadband InP two-way distributed power-combining Darlington amplifier. To simultaneously enhance output power, maintain wide bandwidth, and preserve reliability, a cascaded dist...
Th2G-1: A Ku-Band CMOS LNA with Symmetric Polarity-Selective Transformer for Efficient 180° Phase Shifting
We proposes a Ku-band CMOS low-noise amplifier (LNA) with an integrated 180° phase shift function, aimed at reducing the chip area of beamforming systems. The proposed LNA consists of two stages, with...
Th2G-2: A 130GHz 360° Gain-Invariant Phase Shifter with 5.625° Phase Resolution, 0.19° RMS Phase Error and < 0.56dB RMS Gain Error
This paper presents a D-band gain-invariant phase shifter (PS), integrating a 6-bit vector-modulated based active PS and a 5-bit phase-invariant variable gain amplifier (VGA) in a 130nm SiGe BiCMOS te...
Th2G-3: An 86–90GHz Adaptive Gain CMOS LNA with Linearity Enhancement & -6dBm Blocker Tolerance
This paper presents a W-band adaptive gain low-noise amplifier to improve its IM3 rejection and blocker tolerance. The proposed design employs a current steering topology controlled by the adaptive bi...