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In this work, a high-performance AlN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) with germanium nitride (GeN) as gate dielectric was fabricated. The gate dielectric ...
This study investigates the impact of various T-gate structures on the performance of Al0.3Ga0.7N/AlN/GaN HEMTs fabricated on SiC substrates. Five T-gate designs were analyzed, comprising a convention...
This work presents for the first time, the RF large-signal characterization of standard, high-resistivity and trap-rich substrates, along with small-signal characterization, down to the temperature of...
This paper presents a novel unilateral single-pole multi-throw (SPMT) switch with co-integrated RF filtering functionality. It is based on spatiotemporally-modulated coupled resonator arrays whose mod...
This paper presents a tunable dual-band filter featuring a single tuning element for each band. A shaped cavity generates distinct capacitive loading for the resonators as they rotate within the cavit...
This study presents a microfabricated magnetostatic wave (MSW) filter realized in a 15 µm thick yttrium iron garnet (YIG) film, achieving a superior filter skirt at the upper passband edge and extendi...
Magnetostatic spin wave limiters can be used to form fast reconfigurable filters. Spin wave limiter filter reconfiguration occurs in under 1 micro-seconds. Reconfigurable filters enable software defin...
Current surface acoustic wave based duplexers have the drawback of fixed frequency response, leading to complex RF front ends with a high amount of duplexers and switches. New approaches for tunable d...
In this keynote, we will highlight the major challenges the industry has faced over the past 10 years, the current hurdles, and those on the horizon. We’ll present a summary of our research over the y...
To pave the way for sub-terahertz communication like sixth-generation wireless technology, this work demonstrates an accurate yet simple D-band measurement setup to evaluate linear and nonlinear disto...