Back to IMS Schedule
Wed 10 Jun | 15:10 - 17:00
Exhibit Hall Floor
Ifana Mahbub
Univ. of Texas at Dallas
Jason Soric
Raytheon Company
15:10 - 15:30
IF1-1 A Novel Compact Schiffman Phase Shifter With 92% Fractional Bandwidth Enabled by Quasi-0-Degree Phase Inverter
Pingzhu Gong, Kenle Chen
Northeastern University, Northeastern University
15:30 - 15:50
IF1-2 A 18:1 Bandwidth 180º Coupler with Wideband Common-Mode Rejection Balun
Hanxiang Zhang, Hao Yan, Fei Yan, Po Wei Liu, Saeed Zolfaghary Pour, Jonathan Casamayor, Muhammad Uzair, Shehryar Niazi, Ayesha Naseem, Bayaner Arigong
Florida State Univ., Florida State Univ., Florida A&M University, Florida State Univ., FAMU-FSU College of Engineering, Florida State Univ., Florida A&M University, Florida State Univ., Florida A&M University, Florida A&M University - Florida State University
15:50 - 16:10
IF1-3 Super Cavity Region Substrate Integrated Waveguide Bandpass Filter
Zahra Manzoor, Dimitrios Peroulis
Purdue Univ., Purdue Univ.
16:10 - 16:30
IF1-4 Compact D-band Differential Single-Inductor Power Divider with 0.0059 mm2 Silicon Area and 0.35-dB Minimum Insertion Loss
Aniello Franzese, Rakesh Sinha, Seyyid Dilek, Batuhan Sutbas, Corrado Carta
IHP Microelectronics, National Institute of Technology, Rourkela, IHP Microelectronics, IHP Microelectronics, IHP Microelectronics
16:30 - 16:50
IF1-5 IDT-Based mmWave Resonator with Large Impedance Ratio and over-100% Frequency Offset between Resonance and Anti-resonance
Xingyu LIU, Junyan Zheng, Fangsheng Qian, Zijun Ren, Kai Yang, Yansong Yang
Hong Kong Univ. of Science and Technology, Hong Kong Univ. of Science and Technology, Hong Kong Univ. of Science and Technology, Hong Kong Univ. of Science and Technology, Hong Kong Univ. of Science and Technology, Hong Kong Univ. of Science and Technology
16:50 - 17:10
IF1-6 Optically Excited Vanadium Dioxide Switches with dc–330 GHz Bandwidth and Sub-Microsecond Switching Time
David West, Brett Ringel, John Cressler, Nima Ghalichechian
Georgia Institute of Technology, Georgia Institute of Technology, Georgia Institute of Technology, Georgia Institute of Technology
17:10 - 17:30
IF1-7 Low-Loss, Flat-Passband, 6-31 GHz Tunable Magnetostatic Surface Wave Filter with Zero Static Power Consumption
Shun Yao, Shuxian Wu, Yixiao Ding, Dengyang Lu, Xingyu Du, Tao Wang, Chin-Yu Chang, Mark Allen, Roy H. Olsson III
Univ. of Pennsylvania, Univ. of Pennsylvania, Univ. of Pennsylvania, Univ. of Pennsylvania, Univ. of Pennsylvania, Univ. of Pennsylvania, Univ. of Pennsylvania, Univ. of Pennsylvania, Univ. of Pennsylvania
17:30 - 17:50
IF1-8 D-Band SIW Transitions in GaAs IPD Technology: Triple-Stack Vertical Flip-Chip and WR-06 Interconnects
Ta-Yeh Lin, Shuw-Guann Lin, Yin-Cheng Chang, Chaoping Hsieh, Da-Chiang Chang
Taiwan Semiconductor Research Institute, National Institutes of Applied Research, Taiwan Semiconductor Research Institute, National Institutes of Applied Research, Taiwan Semiconductor Research Institute, National Institutes of Applied Research, Taiwan Semiconductor Research Institute, National Institutes of Applied Research, Taiwan Semiconductor Research Institute, National Institutes of Applied Research
17:50 - 18:10
IF1-9 An Additively Manufactured Camera-Lens-Inspired 4D/Shape-Reconfigurable Circular Phased Array for Multi-Octave Ultrawideband, Squint-Free, and Pattern-Invariant Beamforming
Hani Al Jamal, Manos Tentzeris
Georgia Institute of Technology, Georgia Institute of Technology
18:10 - 18:30
IF1-10 ECAM-Fabricated Low-Loss 3D Feed Network and Antenna for 6G Backhaul
Nicholas Sanford, Ravi Challa
Washington Univ. in St. Louis, Fabric8Labs
18:30 - 18:50
IF1-11 Selective Laser Melting Design-to-Manufacturing Method for Integrated W-Band 3-D-Printed Feeds
Gines Garcia-Contreras, Corentin Lattion, Stefano Sirci, Erwan Guenier, Esteban Menargues, Alban Mourier, Vaclav Pejchal, Maria Garcia-Vigueras
Institut National des Sciences Appliquées de Rennes, SwissTo12, SwissTo12, Centre Suisse d'Electronique et Microtechnique SA, SwissTo12, SwissTo12, Centre Suisse d'Electronique et Microtechnique SA, Institut National des Sciences Appliquées de Rennes
18:50 - 19:10
IF1-12 Accurate Load-pull on InP HBT and InP HEMT Devices, Achieving Above 30% PAE at 220 GHz
Robert Jones, Jerome Cheron, Miguel Urteaga, William Deal, Antonio Crespo, Michael Elliott, Ryan Gilbert, Benjamin Jamroz, Jeffrey Jargon, Peter Aaen
National Institute of Standards and Technology, National Institute of Standards and Technology, Teledyne Scientific Company, Northrop Grumman Corp., Air Force Research Laboratory Sensors Directorate, KBR Inc., KBR Inc., National Institute of Standards and Technology, National Institute of Standards and Technology, Colorado School of Mines
19:10 - 19:30
IF1-13 4-Pole 20-nm InGaAs HEMT-On-Silicon Technology for Enhanced Breakdown Voltage Achieving fmax > 650 GHz
Maxime Moulin, Arnulf Leuther, Sayed Ali Albahrani, Felix Heinz, Konstantin Kuliabin, Sébastien Chartier, Alen Sebastian, Antony Abel Kunnath, Roger Lozar, Rüdiger Quay
Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Univ. of Freiburg, Fraunhofer Institute for Applied Solid State Physics, Univ. of Freiburg, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics
19:30 - 19:50
IF1-14 A Novel Compact 200 MHz GaN DC/DC Converter Module for Highly-Efficient PoL Supply
Thomas Hoffmann, Aron Barber, Lars Schellhase, Deguang Sun, Andreas Wentzel
Ferdinand-Braun-Institut, Ferdinand-Braun-Institut, Ferdinand-Braun-Institut, Ferdinand-Braun-Institut, Ferdinand-Braun-Institut
19:50 - 20:10
IF1-15 Double Balanced Parametric and Resistive Millimeter-Wave Mixers with more than 100 GHz RF-Bandwidth
Patrick Umbach, Fabian Thome, Arnulf Leuther, Rüdiger Quay
Fraunhofer IAF, Fraunhofer IAF, Fraunhofer IAF, Fraunhofer IAF
20:10 - 20:30
IF1-16 Distributed Resistive Up-Converter GaN HEMT MMIC With High LO Suppression for Wideband Applications Up to D-Band
Cristina Maurette-Blasini, Sébastien Chartier, Sandrine Wagner, Peter Brückner, Rüdiger Quay
Univ. of Freiburg, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Univ. of Freiburg
20:30 - 20:50
IF1-17 A 33-39-GHz Compact Low-Power Low-PN VCO Achieving 205-dBc/Hz FOMTA with Overlapping Symmetrical Folded Tail Inductors for FMCW Radars
Jin Zhang, Miao Yu, Fenglin Yuan, Kaixue Ma
Tianjin Univ., Tianjin Univ., Tianjin Univ., Tianjin Univ.
20:50 - 21:10
IF1-18 K-Band MMIC Quasi-Elliptic Filtering Amplifier Isolator
Kexin Li, Dimitra Psychogiou
UCC-Tyndall, Univ. College Cork
21:10 - 21:30
IF1-19 8–27 GHz Compact, Low-Power CMOS Active Power Divider Using CG-SF Topology and Inductor Array
Byeong-Chan Lee, Jeong-Taek Son, Joon-Hyung Kim, Jae-Eun Lee
Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ.
21:30 - 21:50
IF1-20 Novel GaN-Based Digital Class-E Doherty PA with High 12dB OBO Efficiency
Giulia Bartolotti, Anna Piacibello, Vittorio Camarchia, Deguang Sun, Thomas Hoffmann, Andreas Wentzel
Politecnico di Torino, Politecnico di Torino, Politecnico di Torino, Ferdinand-Braun-Institut, Ferdinand-Braun-Institut, Ferdinand-Braun-Institut
21:50 - 22:10
IF1-21 An Efficient Load-modulated Outphasing Energy Recovery Amplifier with High Linearity Using a Complex-impedance Rectifier
Baihua Zeng, Pei-Wen SHU, Yufei Pan, Shaoyong Zheng, Wing Shing Chan, Xinyu Zhou
City Univ. of Hong Kong, City Univ. of Hong Kong, Guangzhou University, Sun Yat-sen Univ., City Univ. of Hong Kong, Hong Kong Polytechnic Univ.
22:10 - 22:30
IF1-22 A 25 dBm 95–115 GHz Coupler-Based Traveling-Wave MMIC Power Amplifier in GaAs pHEMT Technology
Göksu Kaval, Mingquan Bao, Gregor Lasser, Marcus Gavell, Christian Fager
Gotmic AB, Ericsson, Chalmers Univ. of Technology, Gotmic AB, Chalmers Univ. of Technology
22:30 - 22:50
IF1-23 A 26-40 GHz GaN Doherty Power Amplifier with >20% PAE at 6-dBBack-Off Supporting Multi-Band 5G mm-Wave Applications
Moïse Safari Mugisho, Christian Friesicke, Peter Brückner, Rüdiger Quay
Fraunhofer Institute for Applied Solid State Physi, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute for Applied Solid State Physics
22:50 - 23:10
IF1-24 0.5-to-52 GHz High Power Nonuniform Distributed Amplifier in 60 nm GaN/Si Process
Anthony Pham, Anh-Vu Pham
Univ. of California, Davis, Univ. of California, Davis
23:10 - 23:30
IF1-25 Dual Input Characterization of an Asymmetric Orthogonal Load Modulated Balanced Amplifier for Enhanced Linear Performance
Jean-Baptiste Urvoy, Àngela Ciutat, Roberto Quaglia, Gabriel Montoro, Pere L. Gilabert
Cardiff University, Univ. Politècnica de Catalunya, Cardiff University, Univ. Politècnica de Catalunya, Univ. Politècnica de Catalunya
23:30 - 23:50
IF1-26 Rotman Lens Design using Factorization Machine and Quantum Annealing
Yoonhee Son, Eungkyu Lee, Sanghoek Kim
Kyung Hee Univ., Kyung Hee Univ., Kyung Hee Univ.
23:50 - 00:10
IF1-27 Quantum Random Phased Array for Physical Layer Security in Covert Communication
Jonathan Casamayor, Fei Yan, Mia Reynolds, Bayaner Arigong
Florida State Univ., Florida State Univ., Florida A&M University, Florida A&M University
00:10 - 00:30
IF1-28 Quantum Transport in RF Applications: Ab Initio Investigations, Circuit Modeling, and Experimental Validation of Ferroelectric Diodes
Martino Aldrigo, Eleonora Pavoni, Leonardo Zappelli, Giorgio Biagetti, Paolo Crippa, Hardly Joseph Christopher, Catalin Parvulescu, Florin Nastase, Paola Russo, Emiliano Laudadio, Davide Mencarelli, Luca Pierantoni
IMT Bucharest, Univ. Politecnica delle Marche, Università Politecnica Delle Marche, Univ. Politecnica delle Marche, Univ. Politecnica delle Marche, IMT Bucharest, IMT Bucharest, IMT Bucharest, Università Politecnica delle Marche, Università Politecnica delle Marche, UNIVPM, Università Politecnica delle Marche, Italy
00:30 - 00:50
IF1-29 Compact Tune-Free Dual-Band Filter Using Metal Insert
Anatoly Deleniv, Patricia Bouca, Thanh Do
Ericsson, Ericsson Ab, Ericsson