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Th2G-4: A 71–86-GHz Receiver with 5-GHz IF Signal Bandwidth for E-Band Broadband Communication in 65-nm CMOS
This paper presents a 71–86-GHz receiver (RX) with 5-GHz IF bandwidth (BW) in 65-nm CMOS, which can be applied to high-speed and large-capacity wireless communications. The proposed receiver integrate...
Th2G-5: A 6.5-GHz Low-Power Self-Interference Cancellation Receiver with Two-Stage Feedforward Technique and Automatic Gain Control Loop
This paper presents a two-stage feedforward self-interference cancellation (SIC) receiver designed for Frequency Division Duplexing (FDD) applications with low power consumption. The receiver employs ...
Th2G-6: First Demonstration of MMIC Low-Noise Amplifiers Operating at Ka-Band Realized with Enhancement-Mode Gallium Nitride HEMTs
In this contribution a first demonstrator of a Low-Noise Amplifier (LNA) employing an Enhancement-mode Gallium Nitride (GaN) High Electron Mobility Transistor in industrial-grade technology is given. ...
Th3A-1: Flexible Focalization: An Addititively Manufactured, Conformal, Low-Profile Multilayer Transmitarray for Space-Based 5G/mmWave Applications
For the first time, a 28 GHz additively manufactured multilayer flexible transmitarray (TA) system is introduced, utilizing inkjet printing on thin, flexible Polyethylene Terephthalate (PET) substrate...
Th3A-2: A Reconfigurable Dielectric-Loaded Millimeter-Wave Waveguide Bandpass Filter Based on Customized 3D-Printing Vanadium Dioxide Filament
A reconfigurable millimeter-wave waveguide bandpass filter utilizing 3D-printed free-form dielectric resonators is presented in this paper. The dielectric resonators are fabricated using novel customi...
Th3A-3: Aerosol Jet Fully 3D Printed RF Attenuator Using Resistive Ink
In this paper, aerosol jet printing is used to print the substrate, microstrips, and resistive material to realize a fully additively manufactured Pi configuration RF attenuator. The current target at...
Th3A-4: An Agile Additively Manufactured 5G/mm-Wave RF Front-End with Multi-Layer Conformality and Printed RF VIAs for Ultra-Wideband and Miniaturized Systems
This paper presents the first fully additively manufactured (AM) multi-layered RF front-end (RF-FE) for mm-wave frequencies (20-30 GHz), integrating active devices, passive printed structures, and RF ...
Th3A-5: Integration of Millimeter-Wave Air Filled Cavities and Filters Using Vertically Aligned Carbon Nanotubes
This work is a step towards the 3D integration of millimeter-wave and THz circuits and subsystems with a nano-packaging technology using vertically aligned carbon nanotubes (VACNTs). In doing so, we h...
Th3B-1: Deep Level Effects and Hot-Electron Reliability in Scaled GaN HEMTs
Carbon-related defects, introduced as doping or due to contamination during MOCVD growth, can induce dispersion effects and threshold voltage instability in GaN-based HEMTs. Back-barriers, consisting ...
Th3B-2: On-Wafer Characterization of K-Band to V-Band GaN IMPATT Diodes
High-gain GaN impact-ionization avalanche transit-time (IMPATT) diodes have been fabricated and experimentally characterized. The devices feature a “Hi-Lo” design; temperature dependent reverse I-V me...