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GaN HEMTs are highly attractive microwave sources due to their superior output power and efficiency compared to other solid-state power amplifiers. Researchers are actively exploring methods to achiev...
Gallium oxide (Ga₂O₃) has unique and attractive features represented by physical properties based on the bandgap energy of 4.5eV and availability of large-size, high-quality wafers produced from melt-...
Despite increasing the operating voltage and current density of ultra-wide bandgap devices, excessive Joule heating significantly limits UWBG devices from reaching their theoretically predicted perfor...
Gallium Nitride (GaN) HEMT technology is pivotal for power and RF applications but suffers from significant Joule heating, affecting performance and reliability. We have developed a low-temperature (~...
Noise sources are a key technology for the characterization and calibration of THz instrumentation ranging from amplifiers to radiometers. This talk will describe the development of noise sources, bot...
This talk will discuss and demonstrate a recent technique developed to characterize the noise parameters of microwave active devices by varying their size. The approach is very innovative as it provid...
This presentation discusses cryogenic characterization techniques for the development of cryogenically cooled MMIC LNAs. On-chip testing at cryogenic temperatures speeds up chip developments and quali...
Instrumentation projects in radio astronomy have reached production scales of hundreds of units, with a further increase expected in the near future. In particular this applies to the performance crit...
This presentation will provide an overview of the workshop. It will shortly elucidate the three individual domains in which the inherent self-interference signal from the own transmitter can be cancel...
In-band full-duplex technology (IBFD) enables a device to simultaneously transmit and receive on the same frequency and at the same time. The principal advantage of IBFD is that it doubles the spectra...