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Thu 11 Jun | 08:00 - 09:40
151AB
This session focuses on millimeter-wave and sub-THz power amplifiers in InP, GaN, and CMOS technologies, covering E-band to D-band frequencies for next-generation communication, radar, and sensing applications. Featured works include advanced techniques in slot-line and 32-way power combining, loss-optimized matching networks, and a broadband distributed amplifier (DA) architecture utilizing a tapered coupled-line approach.
08:00 - 08:20
Th1A-1 A Compact D-band 32-Way 28.2 dBm Power Amplifier in InP HBT
08:20 - 08:40
Th1A-2 A D-Band GaN Power Amplifier with 28 dBm Psat, a Power Density of 0.2 W/mm^2, and Loss-Optimized Matching Networks
08:40 - 09:00
Th1A-3 A 70-170-GHz InP Differential Non-Uniform Distributed Amplifier Using Tapered Output Coupled Line for High Output Power
09:00 - 09:20
Th1A-4 A 0.48 W/mm2 High-Power-Density D-Band Power Amplifier in 250-nm InP HBT Process
09:20 - 09:40
Th1A-5 A CMOS E/W-Band Power Amplifier with 53% Bandwidth Using an Over-Neutralized Active Core for Dielectric Waveguide Interconnects