Tu1H: RFTT Late Breaking News

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Tue 9 Jun | 08:20 - 09:40
Room: 151AB
Steven Bowers
Univ. of Virginia
Joe Bardin
Google
The late-breaking news session features four fast-tracked papers highlighting advances across RFTT topic areas. It opens with an inductor-less LNA using a gm-boosted common-source stage followed by a paper then addresses 22 nm CMOS layout challenges to realize compact single-, dual-, and octa-core 120 GHz VCOs. After that, wideband components for a Tokamak edge-scanning reflectometer will be presented. The session will conclude with a fully connectorized InP amplifier module with bandwidth from DC to 189 GHz.
08:20 - 08:40
Tu1H-1 An Ultra-Compact Inductorless Noise-Canceling LNA with Gain-Boosting and Current Reuse in 16nm FinFET
ABSTRACT
Shuyu Chen, Boxun Yan, Runzhou Chen, Chao-Jen Tien, Mau-Chung Frank Chang
Univ. of California, Los Angeles
08:40 - 09:00
Tu1H-2 Single-, Dual- and Octa-Core Millimeter-Wave VCOs with -190 dBc/Hz FOM_T in 22 nm FDSOI CMOS
ABSTRACT
Matthias Moeck, Cagri Ulusoy
Karlsruhe Institute of Technology
09:00 - 09:20
Tu1H-3 Wide-Band Microwave Components for a Tokamak Edge Scanning Reflectometer
ABSTRACT
Elizabeth Kowalski, Valentina Nikolaeva, Yijun Lin, Seung-Gyou Baek, Daniel Hachmeister, Rafael Zubieta Lupo, Kyle Rohan, Ted Howell, Matthew Silva Sa, Matthew Reinke
Commonwealth Fusion Systems, Massachusetts Institute of Technology
09:20 - 09:40
Tu1H-4 189-GHz-Bandwidth InP-HBT Baseband Amplifier Module With 0.5-mm Coaxial Connectors
ABSTRACT
Ko Hasegawa, Hitoshi Wakita, Teruo Jyo, Munehiko Nagatani, Hiroyuki Takahashi
NTT Device Technology Laboratories