Readout in superconducting qubits must determine the presence or absence of a single quantum of energy on the order of 20 micro electron volts, in a time on the order of 0.1 microsecond. Measuring suc...
This work analyzes loss mechanisms in stacked switch-branch structures implemented in 28 nm FD-SOI CMOS on several substrates, from standard-resistivity silicon (10 Ωcm) to high-resistivity (HR &g...
Gap waveguide technology has emerged as a promising solution for high-frequency systems, enabling low-loss transmission and integration flexibility without the need for electrical contact between meta...
This paper presents a novel high-sensitive microwave angular displacement sensor with an extended wide dynamic range. The proposed sensor is implemented using microstrip technology and consists of a p...
76–81 GHz FMCW automotive radar transceiver is presented, implemented in 22 nm CMOS-FDX. Its key features are four TX channels with 7-bit phase rotator delivering controllable output power up to +15 d...
The 0.1–10THz band offers vast untapped spectrum for next-generation communication and sensing. Despite recent technological progress, challenges remain in utilizing frequencies above 100GHz. This tal...
This paper reports the design and measurement of a high efficiency broadband Gallium Nitride (GaN) Doherty power amplifier (DPA) monolithic microwave integrated circuit (MMIC) fabricated on a 0.15 μm ...