Th2D: Device and Technology Advances for RF Switches and Power Amplification

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Thu 11 Jun | 10:10 - 11:50
Room 157AB
Ian Rippke
Keysight Technologies
Wolfram Stiebler
Raytheon Technologies
Join us for the latest research in RF switching and power amplification. Explore advances in RF switch technology, including an analysis of SOI-switch substrate losses, GaN-on-silicon switch technology, and non-volatile GaN switch devices. For RF power modeling, we will investigate high-linearity design using two-tone load-pull and accurate large-signal device modeling of GaN power stages.
10:10 - 10:30
Th2D-1 Substrate-Dependent Loss in High-Stacked Switch Branches in 28nm FD-SOI CMOS on Standard and High-Resistivity Substrates
ABSTRACT
M. Rack, M. Nabet, D. Lederer, A. Cathelin, J.-P. Raskin
UCLouvain, STMicroelectronics
10:30 - 10:50
Th2D-2 Low-Loss 25GHz RF Switches in 300mm GaN-on-Si Technology with 0.4dB Insertion Loss and 70fs Ron×Coff
ABSTRACT
Seahee Hwangbo, Qiang Yu, Ibukun Momson, Said Rami, Heli Vora, Prafful Golani, Michael Beumer, Pratik Koirala, Ahmad Zubair, Samuel Bader, Marko Radosavljevic, Han Wui Then
Intel
10:50 - 11:10
Th2D-3 GaN Non-Volatile RF Switch Based on Bipolar Charge Trapping for Reconfigurable RF FEMs
ABSTRACT
Yichen Liu, Yuanke Zhang, Tao Chen, Yan Cheng, Yat Hon Ng, Longge Deng, Yutao Geng, Zheng Wu, Liuqing Gao, Kevin J. Chen
HKUST
11:10 - 11:30
Th2D-4 Highly Linear AlN/GaN/AlGaN HEMTs Demonstrated Using 40-GHz Two-Tone Active Load-Pull with Record PAE at 30dBc C/IM3
ABSTRACT
Lyes Ben Hammou, François Grandpierron, Elodie Carneiro, Katir Ziouche, Etienne Okada, Farid Medjdoub
IEMN (UMR 8520)
11:30 - 11:50
Th2D-5 GaN Power Bars for Microwave Power: Modeling and Validation
ABSTRACT
Valeria Vadalà, Antonio Raffo, Ryuichi Namba, Gianni Bosi, Ken Kikuchi, Mauro Marchetti, Hiroshi Yamamoto, Giorgio Vannini
Università di Milano-Bicocca, Università di Ferrara, Sumitomo Electric, Maury Microwave