Th2D: Device and Technology Advancements for RF Switches and Power Amplification

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Thu 11 Jun | 10:10 - 11:50
157AB
Ian Rippke
Keysight Technologies
Wolfram Stiebler
Raytheon Company
Join us for the latest research in RF switching and power amplification. Explore advances in RF switch technology, including an analysis of SOI-switch substrate losses, GaN-on-silicon switch technology, and non-volatile GaN switch devices. For RF power modeling, we will investigate high-linearity design using two-tone load-pull and accurate large-signal device modeling of GaN power stages.
10:10 - 10:30
Th2D-1 Substrate-Dependent Loss in High-Stacked Switch Branches in 28 nm FD-SOI CMOS on Standard and High-Resistivity Substrates
ABSTRACT
Martin Rack, Massinissa Nabet, Dimitri Lederer, Andreia Cathelin, Jean-Pierre Raskin
Université Catholique de Louvain, UCLouvain, Université Catholique de Louvain, STMicroelectronics, Universite catholique de Louvain
10:30 - 10:50
Th2D-2 Low-Loss 25 GHz RF Switches in 300 mm GaN-on-Si Technology with 0.4 dB Insertion Loss and 70 fs Ron×Coff
ABSTRACT
Seahee Hwangbo, Qiang Yu, Ibukunoluwa Momson, Said Rami, Heli Vora, Prafful Golani, Michael Beumer, Pratik Koirala, Ahmad Zubair, Samuel Bader, Marko Radosavljevic, Han Wui Then
Intel Corp., Intel Corp., Intel Corp., Intel Corp., Intel Corp., Intel Corp., Intel Corp., Intel Corp., Intel Corp., Intel Corp., Intel Corp., Intel Corp.
10:50 - 11:10
Th2D-3 GaN Non-volatile RF Switch Based on Bipolar Charge Trapping for Reconfigurable RF FEMs
ABSTRACT
Yichen Liu, Yuanke Zhang, Tao Chen, Yan Cheng, Yat Hon Ng, Longge Deng, Yutao Geng, Zheng Wu, Liuqing Gao, Kevin Jing Chen
Hong Kong Univ. of Science and Technology, Hong Kong Univ. of Science and Technology, Hong Kong Univ. of Science and Technology, Hong Kong Univ. of Science and Technology, Hong Kong Univ. of Science and Technology, Hong Kong Univ. of Science and Technology, Hong Kong Univ. of Science and Technology, Hong Kong Univ. of Science and Technology, Hong Kong Univ. of Science and Technology, Hong Kong Univ. of Science and Technology
11:10 - 11:30
Th2D-4 Highly Linear AlN/GaN/AlGaN HEMTs Demonstrated Using 40-GHz Two-Tone Active Load-Pull with Record PAE at 30 dBc C/IM3
ABSTRACT
Lyes Ben Hammou, Elodie Carneiro, François Grandpierron, Katir Ziouche, Etienne Okada, Farid Medjdoub
Institut d'électronique de microélectronique et de nanotechnologie, Institut d'électronique de microélectronique et de nanotechnologie, Univ. Lille, Institut d'électronique de microélectronique et de nanotechnologie, Institut d'électronique de microélectronique et de nanotechnologie, Institut d'électronique de microélectronique et de nanotechnologie
11:30 - 11:50
Th2D-5 GaN Power Bars for Microwave Power: Modeling and Validation
ABSTRACT
Valeria Vadalà, Antonio Raffo, Ryuichi Namba, Gianni Bosi, Ken Kikuchi, Mauro Marchetti, Hiroshi Yamamoto, Giorgio Vannini
University of Milano Bicocca, university of ferrara, Sumitomo Electric Device Innovations, University of Milano-Bicocca, Sumitomo Electric Device Innovations, Maury Microwave Corp., Sumitomo Electric Device Innovations, Univ. Degli Studio Di Ferrara