This paper presents a two-stage Doherty power amplifier (DPA) module designed for high-efficiency operation in 5G massive-MIMO base transceiver systems (BTSs). The DPA’s high performance is achieved t...
This paper presents a broadband three-way continuous-mode Doherty power amplifier (DPA) incorporating a multi-resonant harmonic injection network (HIN) for wideband efficiency enhancement. By optimizi...
For decades, the semiconductor industry was defined by the monolithic chip — large, complex dies optimized through relentless scaling. That era is giving way to a fundamentally different design paradi...
In this work, a suite of 35 nm InP HEMT MMIC chiplets are heterogeneously integrated on a 75 µm SiC interposer. Performance of each integrated chiplet component is demonstrated at F-Band (90 – 140 GHz...
This work presents the first additively manufactured millimeter-wave identification (mmID) platform for wearable sensing that is fully self-powered and orientation agnostic. A multilayer inkjet-printe...
For the first time, the authors propose an additively manufactured reconfigurable metalens that enables ultra-wideband operation and wide-angular coverage for adaptive mmWave front-ends. The design us...
The present paper proposes a novel packaging method for high-frequency power amplifiers such as GaN HEMTs. The aim of this method is to minimize the parasitic components effect of the interconnection ...
This paper presents a compact, fully integrated packaging-antenna solution for a programmable active STAR-RIS capable of simultaneous transmission and reflection. Through co-design of a multilayer org...
This paper presents a wideband reflection-type group delay controller (RTGDC) that achieves a large group delay range and tunable center-frequency operation using a dual-varactor reflective load. Two ...
This paper presents a continuously tunable delay line based on coupled transmission-line resonators whose resonant frequencies and coupling coefficients are controlled using BST (Barium Strontium Tita...