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Th1H-2: A Scalable, Binary Phase, Millimeter-Wave Reconfigurable Intelligent Surface
We present a 1-bit reconfigurable intelligent surface (RIS) operating at millimeter-waves (mmWaves) that employs a 2.5D integration topology for size scalability and a randomized phase delay pattern t...
Th1H-3: A Wideband Configurable Multi-Port Wire Antenna
This work presents a configurable 11-port wire antenna with the ability to synthesize the beam and perform beam steering across a broad range of frequencies. We employ an analytical method to select t...
Th1H-4: Spatial-Spectral Mapping Beamspace MIMO Receiver Enabled by a Programmable Space-Time-Modulated Metamaterial Antenna
This paper leverages a space-time-modulated metamaterial (ST-MTM) antenna as a beamspace multiple-input multiple-output (MIMO) receiver, which facilitates the retrieval of information from multiple us...
Th1H-5: A Fully-Passive 4-Channel RF Beamformer with Ultra-Low Insertion Loss at 12GHz X/Ku-Band for Low-Power Applications in 28nm CMOS
Current methods of radio frequency (RF) beamforming require significant power, making them impractical for power-constrained applications. An ultra-low loss fully-passive, 4-channel, 12GHz, RF beamfor...
Th1I-1: KEYNOTE: Ultra-Wide Bandgap MMW/Sub-MMW Devices
The U.S. Army Ultra-wide Bandgap RF Electronics Center is a multidisciplinary basic research center in electronics, semiconductor physics, and materials science for exploring ultra-wide bandgap (UWBG)...
Th1I-2: An Adaptable In(Ga)P/Ga(Sb)As/Ga(In)As HBT Technology on 300mm Si for RF Applications
We present a versatile III-V Heterojunction Bipolar Transistor (HBT) technology on 300 mm Si which can be adapted to RF applications ranging from microwave to mmWave bands. We demonstrate its potentia...
Th1I-3: Local Interface RF Passivation Layer Based on Helium Ion-Implantation in High-Resistivity Silicon Substrates
An original method to locally fabricate interface passivation layers embedded in Silicon-on-Insulator substrates is presented. This method consists in creating defects under the Buried Oxide (BOX) tha...
Th1I-4: Large-Signal Characterisation and Analysis of AlN/GaN MISHEMTs on Si with a PAE > 62% at 28GHz
We investigate AlN/GaN MISHEMTs fabricated on a 200 mm Si substrate with an in-situ SiN as the gate insulator and access region passivation layer. The impact of SiN thickness scaling on the large-sign...
Tu1B-3: 3-D Centrally-Loaded FSS Leveraging Conductive and Dielectric Multimaterial Additive Manufacturing for Broadband Performance
This paper presents a three-dimensional (3-D) frequency-selective surface (FSS) based spatial bandpass filter. The meta-atom of our proposed design is inspired by and evolved from the fundamental cent...
Th2E-6: A Highly-Efficient 2.45 GHz Plasma Jet Based on A Dielectric Microwave Anapole Structure
We introduced anapole technology to efficiently generate atmospheric pressure microwave plasma jets within a dielectric structure. Anapoles function in contrast to conventional antennas, completely tr...