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Th2G-5: Millimeter-wave Device Characterization Under Wideband Modulated Signals using Vector Network Analyzer Frequency Extenders
This paper presents an innovative frequency-extender-based measurement system designed for the comprehensive characterization of mmWave devices under both CW and modulated signal excitation. In additi...
Th2H-1: Active Calibration Approach Addressing Antenna Mutual Coupling and Power Amplifier Output Mismatch in Fully Digital MIMO Transmitters
This paper presents an active calibration scheme designed for fully digital multiple-input multiple-output (MIMO) transmitter systems, a crucial component for achieving channel reciprocity. The theore...
Th2H-2: Indirectly-Non-Reciprocal Load Modulated Balanced Amplifier with Equivalent Operation at Antenna Interface
This paper presents, for the first time, a new time-divisional-duplex (TDD) front-end architecture, named Indirectly-Non-Reciprocal Load Modulation Balanced Amplifier (INR-LMBA), for emerging massive ...
Th2H-3: An Efficient Analog Self-Interference Canceller Using a Balanced Topology for Mitigating Inherent Multi-Tap Loss
Addressing self-interference in dynamically changing multipath environments for co-located high-power transmit and receive systems is a significant challenge. This paper presents a new topology based ...
Th2H-4: Integrated 75-100 GHz In-Band Full-Duplex Front End GaN MMIC
This paper presents a fully integrated 75–100 GHz in-band full-duplex (IBFD) front end MMIC. The MMIC is implemented in a 40-nm HEMT GaN-on-SiC process and consists of a tunable analog self-interferen...
Th2H-5: A Compact 130 GHz CMOS OOK-Doubler with Embedded 10 Gb/s Modulator and Integrated Glass Antenna for Scalable Array Systems and Efficient Short-Range Communication
This paper presents a D-band on-off keying (OOK)-Doubler that uses a balanced push-push design with an integrated switch at its common-node (CN) for second harmonic modulation. The input impedance of ...
Th2I-1: KEYNOTE: Overview of RF Power Amplifier Technology for Wireless Infrastructure and Future Trends
Despite the major advances brought by GaN-technology, it has not led yet to the ‘ultimate’ RF power amplifier. As an example, multi-mode, highly efficient power amplifiers are still challenging and su...
Th2I-2: A Heterogeneously-Integrated Ka-Band, N-Polar Gallium Nitride HEMT Amplifier
We demonstrate the heterogeneous integration of an 80-nm N-polar GaN HEMT fabricated on a silicon carbide wafer into a standard silicon wafer to realize a millimeter-wave amplifier that operates at 26...
Th2I-3: Ka Band GaN MIS-HEMT with ALD-SiN Gate Dielectric and Lp-SiN Passivation Layer
In this paper, Lower pressure SiN (LP-SiN) and atomic layer deposition SiN (ALD-SiN) is developed for fabrication of ka-band AlGaN/GaN metal insulator semiconductor (MIS) high electron mobility transi...
Tu1B-4: 10-Gbit/s Close Proximity Communication in 120GHz Band Sheet LAN Using Dielectric Sheet as Transmission Medium
This study presents 10-Gbit/s data transmission based on 120 GHz band high-speed close-proximity communication technology by using a dielectric sheet as the transmission medium. A pyramid-shaped apert...