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This paper presents an innovative frequency-extender-based measurement system designed for the comprehensive characterization of mmWave devices under both CW and modulated signal excitation. In additi...
This paper presents an active calibration scheme designed for fully digital multiple-input multiple-output (MIMO) transmitter systems, a crucial component for achieving channel reciprocity. The theore...
This paper presents, for the first time, a new time-divisional-duplex (TDD) front-end architecture, named Indirectly-Non-Reciprocal Load Modulation Balanced Amplifier (INR-LMBA), for emerging massive ...
Addressing self-interference in dynamically changing multipath environments for co-located high-power transmit and receive systems is a significant challenge. This paper presents a new topology based ...
This paper presents a fully integrated 75–100 GHz in-band full-duplex (IBFD) front end MMIC. The MMIC is implemented in a 40-nm HEMT GaN-on-SiC process and consists of a tunable analog self-interferen...
This paper presents a D-band on-off keying (OOK)-Doubler that uses a balanced push-push design with an integrated switch at its common-node (CN) for second harmonic modulation. The input impedance of ...
Despite the major advances brought by GaN-technology, it has not led yet to the ‘ultimate’ RF power amplifier. As an example, multi-mode, highly efficient power amplifiers are still challenging and su...
We demonstrate the heterogeneous integration of an 80-nm N-polar GaN HEMT fabricated on a silicon carbide wafer into a standard silicon wafer to realize a millimeter-wave amplifier that operates at 26...
In this paper, Lower pressure SiN (LP-SiN) and atomic layer deposition SiN (ALD-SiN) is developed for fabrication of ka-band AlGaN/GaN metal insulator semiconductor (MIS) high electron mobility transi...
This study presents 10-Gbit/s data transmission based on 120 GHz band high-speed close-proximity communication technology by using a dielectric sheet as the transmission medium. A pyramid-shaped apert...