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RTu1C-4: A 6.5 to 9GHz IEEE 802.15.4/4z Compatible IR-UWB SoC Capable of Handling -22dBm WiFi-5 or -24 to -17dBm LTE Blocker Levels
This work presents a single-die IEEE 802.15.4/4z compliant impulse-radio ultra-wideband SoC chip that supports single-sided & double-sided two-way ranging, time difference of arrival (TDoA) &a...
RTu1C-5: Fully-Integrated Autonomous K-Band Complex Permittivity Sensor in 22nm FDSOI for Biomedical Body Parameter Monitoring Applications
This work presents a fully integrated low-power system-on-chip (SoC) for autonomous body monitoring applications in 22nm FDSOI CMOS technology. The proposed SoC comprises a K-band complex permittivity...
RTu2A-1: Topology-Optimized Nonintuitive Multilayered mm-Wave Power Amplifiers
Algorithmic inverse design and optimization of multistage power-combined power amplifiers (PA) with nonintuitive layout geometries is presented. The computationally-efficient iterative algorithms dete...
RTu2A-2: 31.7 and 36.7dBm Ka-Band SiGe BiCMOS Power Amplifiers Using Resonated Amplifier Cores and Optimized Power Combining
This paper presents 31.7dBm and 36.7 dBm (4.7 W) Ka-band power amplifiers (PAs) in a 130nm silicon germanium (SiGe) BiCMOS technology operating from a 3.5V supply. High peak power-added efficiency (PA...
RTu2A-3: A SiGe Common-Collector-Common-Base Linear Power Amplifier with 17–28-GHz P1dB 3-dB Bandwidth and Enhanced Large-Signal Stability
This paper presents a broadband SiGe common-collector-common-base (CC-CB) two-stage linear PA with enhanced large-signal stability. Through driving-point admittance analysis, the conventional SiGe cas...
RTu2A-4: A Linear Q-Band Balanced Power Amplifier in a 130nm SiGe BiCMOS Technology Using Two-Tone Load-Pull Optimization
This paper presents a Q-band power amplifier (PA) in a 130nm silicon germanium (SiGe) BiCMOS technology envisioned for future satellite communication (SatCom) applications. To optimize linear efficien...
RTu2A-5: A 5/6GHz Compact, Dual-Band, and Highly Linear Wi-Fi 6E SiGe HBT Power Amplifier Using Q-Modulated Switched Capacitor Interstage Matching Network and Optimized Output Stage
This Work presents a compact, highly linear SiGe HBT power amplifier (PA) for Wi-Fi 6E application. To cover the entire 5/6GHz band, a Q modulated switched capacitor interstage matching network, a bro...
RTu2B-1: A 4.6mW 232GHz Autodyne Complementary Self-Injection-Locked Radar for Micrometer-Level Displacement Sensing and Imaging
This paper presents a novel complementary self-injection-locked (CSIL) radar architecture for low-power, high-accuracy THz phase sensing. The CSIL radar employs a self-injection mechanism within a cou...
RTu2B-2: 400-GHz Concurrent Transceiver Imaging Pixel with Improved Noise Performance and Increased Injection Locking Range
A 400-GHz concurrent transceiver imaging pixel integrating an injection locking circuitry, VCO, SHM, TIA, and patch antenna within a (λ/2)² area and fabricated in the GF 22-nm FDSOI CMOS process achie...
RTu2B-4: A 140GHz FMCW Radar with 22dB Wideband RF-Domain Multipath Self-Interference Cancellation in 28nm CMOS
This paper presents a D-band CMOS FMCW radar with active self-interference (SI) cancellation in the RF domain. The proposed scheme first uses a transmitter (TX) IQ-mixer to ensure coherent sampling of...