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RTu4B-5: A 110-to-203-GHz 18.3-dBm Broadband Power Amplifier Using Modified Three-Conductor Baluns in 130-nm SiGe BiCMOS
This paper presents a broadband high-power sub-terahertz (sub-THz) power amplifier (PA). By integrating the traditional three-conductor (TC) balun with coupled lines (CP lines), a modified TC balun is...
RTu4C-1: A 2.4GHz 676µW Receiver Front-End with Passive Analog FIR Filtering Embedded in Down-Converter Achieving >60dB Blocker Rejection
This paper presents a 2.4GHz low-power receiver front-end that embeds passive analog finite impulse response (AFIR) filtering within the down-converter stage to enhance out-of-band blocker rejection. ...
RTu4C-2: 10-to-30-GHz Blocker-Tolerant Mixer-First Receivers with 40-dB/Decade Transition-Band Roll-Off and Maximum 61.7-dB LO-to-RF Isolation
This paper presents two RF-to-Millimeter-Wave blocker-tolerant mixer-first receivers. A feedforward path with phase compensation is designed parallel to the main path to cancel the out-of-band (OOB) b...
RTu4C-3: An 11.5mW 12.3–14.5GHz Passive Mixer-First Receiver Front End Achieving 4.2dB NF and -5dBm B1dB
This work presents a low power, high dynamic range passive mixer-first receiver for the proposed 6G FR3 band. The proposed architecture achieves high performance at low power by directly driving the m...
RTu4C-4: A 4.2dB NF and 39dB Passive Gain Ultra-Low Power Receiver Front-End with an RF-IF Dual-Stage Capacitive Stacking Technique
This paper introduces a novel RF-IF dual-stage capacitive stacking technique for ultra-low-power 2.4 GHz receiver front-ends. The gain of the proposed front-end is fully composed of the passive compon...
RTu4C-5: A 0.2–6GHz 65nm CMOS Active-Feedback LNA with Threefold Balun-Error Correction and Implicit Post-Distortion Technique
We propose a wideband low-noise amplifier (LNA) with balun-error correction and linearity enhancement. Towards active feedback LNA in double CS stages, a threefold correction of voltage ratio preset, ...
WMG-9: Thermal Management Solutions to GaN Electronics
GaN HEMT technology is a frontrunner in both power and RF application, due to its remarkable material properties that offer high-frequency operation simultaneously with higher power. However, we are s...
WSH-9: Progress in Commercial Realization of mm-Wave Heterogeneous Circuits
This talk presents a review of the work at PseudolithIC to develop a commercial heterogeneous integration process that leverages foundry silicon and compound semiconductor devices. Demonstrated circui...
WMD-8: An electrostatic platform for quantum acoustics
Controlling mechanical oscillators in the quantum regime has implications for quantum information processing, sensing, and explorations of new fundamental physics. In the gigahertz frequency band, sup...
WMD-9: Panel Discussion