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Sun 7 Jun | 08:00 - 17:20
Room: 156AB
Patrick Reynaert, Marco Vigilante, Alexandre Giry
KU Leuven, Qualcomm, CEA-LETI
This workshop will focus on the design and implementation of FR3 Power Amplifiers. It will cover technology considerations, circuit implementation and topology consideration for PAs in this frequency range. Both Silicon, GaAs and GaN circuit examples and techniques are discussed, as well as DPD and broadband circuit techniques. The speakers are from both academia and industry.
WSF-1 Design and Implementation of FR3 Power Amplifiers for Extreme Massive MIMO
Seongkyun Kim
Samsung
WSF-2 Design Techniques for Wideband High-Efficiency Integrated Power Amplifiers in FR1/FR3 Bands
Ayssar Serhan
CEA-LETI
WSF-3 LMBA: Ideal Candidate for FR3 PAs?
Roberto Quaglia
Cardiff University
WSF-4 GaAs HBTs for FR3 Power Amplifiers
Peter Asbeck
Univ. of California, San Diego
WSF-5 Centimeter-Wave Power Amplifiers in Silicon and III-V for 6G FR3 Applications
Chenaho Chu
ETH Zürich
WSF-6 Advanced Supply Modulator Design for 6G FR3 RF Power Amplifiers
Jeheon Lee, Jaeheung Bae, Ji-Seon Paek
Pusan National Univ., Pusan Univ.
WSF-7 Advanced High Efficiency GaN PA Module for FR3 Massive MIMO Base Stations
Shuichi Sakata
Mitsubishi Electric
WSF-8 Modeling and Compensation of Non-Linear Effects in Highly Integrated MIMO Transmit Arrays
Christian Fager
Chalmers Univ. of Technology