Your search produced 12 results

WMG: GaN/Si: an Enabler for FR3 Applications?
IMS2025
GaN HEMT technology plays a crucial role in wireless telecom infrastructure for 3G, 4G, and 5G standards. Thanks to its excellent transport properties, GaN HEMTs support highly efficient, high-power o...
RMo4C: Unleashing Energy Efficiency and High Linearity in IoT RFICs
IMS2025
This session showcases the latest advances in energy-efficient and high-linearity IoT RFIC design. The first paper presents a backscatter communication IC achieving high modulation order and strong si...
RMo2C: mm-Wave Building Blocks & Components
IMS2025
This session explores key mm-wave building blocks and components. The first paper presents a 28–40GHz phase shifter in 65nm CMOS, achieving less than 0.4° RMS phase error, <0.31dB RMS gain erro...
PL2: ISTP/RFIC/IMS: RFIC Innovation: Has the Field Stalled or Are Researchers Losing Their Way?
IMS2025
The past few years have arguably seen a decrease in transformational or disruptive discoveries reported in radio-frequency integrated circuits (RFIC) papers and publications. Does this indicate that R...
IWTU1: Addressing Next Generation Intelligent Wireless Connectivity using Emerging Materials and Technology Solutions
IMS2025
The next generation of wireless connectivity network will incorporate increasing intelligence to efficiently and reliably address emerging applications like XR, teleporting, low latency links for and ...
Frequency Modulated Continuous Wave (FMCW) radar sensors are widely used in applications such as automotive radar, indoor localization, industrial sensing, and imaging. At the heart of these sensors l...
Wireless communication in the D-band inevitably needs beamforming to obtain a decent link budget. While fully digital beamforming yields too much overhead in power and area, analog beamforming, at lea...
… This talk focuses on imec’s 300mm RF Silicon Interposer packaging technology for mm-wave applications. Key modules of the technology will be …
A modulator driver circuit for electro-absorption modulators (EAMs) is designed in 22 nm FD-SOI technology as part of the electrical integrated circuit (EIC) of a 3D-integrated 8-lane silicon photonic...
… This talk focuses on the integration of InP Power Amplifier chiplets onto imec’s 300mm RF silicon interposer technology. Combining high frequency InP transistors with a RF optimized silicon …