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WSP-2: 6G Architectures and Technology Partitioning for Communication and Sensing
For ultra-high-speed wireless communication for short range, spectrum above 100GHz offers a wide bandwidth that is not available in frequency bands used today. Operation above 100GHz definitely requir...
Th1I-4: Large-Signal Characterisation and Analysis of AlN/GaN MISHEMTs on Si with a PAE > 62% at 28GHz
We investigate AlN/GaN MISHEMTs fabricated on a 200 mm Si substrate with an in-situ SiN as the gate insulator and access region passivation layer. The impact of SiN thickness scaling on the large-sign...
WSN-6: Multiplexed Qubit Control with Ultra-Low-Power, Base-Temperature Cryo-CMOS Multiplexer
Large-scale superconducting quantum computing systems entail high-fidelity control and readout of large numbers of qubits at millikelvin temperatures, resulting in a massive input-output bottleneck. C...
WME-2: RF-Optimized Silicon Interposer for mm-Wave and Sub-THz Applications — Technology, Design and System Considerations
… This talk focuses on IMEC’s RF-interposer technology for above-100GHz applications. The drawbacks of traditional PCB-based solutions for higher …
WSF-2: RF-Heterointegration at Wafer-Level and Panel-Level for mm-Wave Applications
… This talk will cover the mm-wave packaging activities within IMEC’s Advanced-RF department. First, we present an RF-optimized waferscale silicon interposer technology for integration of …
Th1I-2: An Adaptable In(Ga)P/Ga(Sb)As/Ga(In)As HBT Technology on 300mm Si for RF Applications
We present a versatile III-V Heterojunction Bipolar Transistor (HBT) technology on 300 mm Si which can be adapted to RF applications ranging from microwave to mmWave bands. We demonstrate its potentia...
WSQ-6: Emerging Devices and Heterogeneous Integration for Future mm-Wave Systems
The rapid evolution of wireless communication systems demands the development of advanced technologies to support the increasing demand for high data rates, low latency and high reliability. This tuto...