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Technical Session Audience Rating RFIC

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  • RMo1B-3: A G-Band Glass Interposer Technology for the Integration of an Amplified Noise Source Based on SiGe BiCMOS 55-nm Technology
    0 Originality
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  • RMo2A-2: A Reconfigurable Ultra Compact Bi-Directional Amplifier with a Build-in-Self Notch Filter for K/Ka-Band Satellite Communication
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    0 Voters
  • RMo2C-2: An 11.8mW 0.4-to-2.6GHz Blocker-Tolerant Receiver with LO Duty-Cycle Compensation and High-Q Selectivity Achieving +15.4/19.2dBm OB-IIP3 at 10/80MHz Offset
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  • RMo3B-1: A 0.2–25GHz Inductorless Complementary Pseudo-Push-Push Frequency Doubler
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  • RMo3C-4: A 10:1 Bandwidth 2.5–25GHz Multi-Standard High-Linearity 6-Bit Phased-Array Receiver Front-End with Quad-Pole I/Q Network and 2.7° RMS Phase Error
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  • RMo4B-4: A 4.25GHz–8.45GHz 67%-Chirp-Fractional-Bandwidth -121.5dBc/Hz-PN@1MHz 88fs-Jitter FMCW Synthesizer with Bandwidth-Boosting and Phase-Noise-Cancellation Techniques
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  • RTu1A-4: An Efficient 0.4THz Radiator with 20.6dBm EIRP and 0.2% DC-to-THz Efficiency in 90nm SiGe BiCMOS
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  • RTu3B-4: A Multi-Band and High-IRR Down-Conversion Mixer for 5G NR FR2 Using Compact Transformer-Based Mutual-Image-Rejection Filter
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  • RTu2B-4: A D-Band Scalable 128-Channel Dual-Polarized Receive Phased-Array with On-Chip Down Converters for 2×2 MIMO Achieving 2×42Gbps
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  • RTu3C-3: A 110-to-170-GHz OOK Transmitter with 40-Gb/s Data Rate and 40-dB On-Off Ratio in 28-nm CMOS
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  • RMo2C-5: A 0.77mW 1.84nJ/Bit Phase Noise Canceling Receiver for QAM and OFDM and Cellular IoT
    0 Originality
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  • RTu4B-1: A 90–98-GHz FMCW Radar Transceiver Supporting Broadband Modulation in 65nm CMOS
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  • RMo1B-4: A 22FDX Wi-Fi PA Demonstrating a New LDMOS Device with 10V Breakdown Achieving Output Power of 29.5dBm at 40% PAE
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  • RMo2A-3: Fully Integrated SiGe HBT BiCMOS Transmit-Receive Front-End IC for 5G mmW Radio with a Reconfigurable Built-In Diode RF Switch
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  • RMo2C-3: A 2.8–4.3GHz Simultaneous Dual-Carrier Transformer-Coupled Passive Mixer-First Receiver Front-End Supporting Blocker Suppression
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  • RMo3B-2: A Compact D-Band Multiply-by-9 Frequency Multiplier with Inductor-Less Active Balun in 16nm p-FinFET Technology
    0 Originality
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  • RMo4A-1: A D-Band Complex Neutralization Cascode Power Amplifier with A Source-Gate Driven Cascode for Enhanced Bandwidth and Efficiency
    0 Originality
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  • RMo4C-1: Transimpedance Amplifiers with 95GHz Transimpedance Bandwidth and 1.5% THD for 800G Coherent Optical Communications
    0 Originality
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  • RTu1B-1: Broadband Noise Characterization of SiGe HBTs Down to 4K
    0 Originality
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  • RTu1C-1: A Watt Level, 5–7GHz All Digital Polar TX Based on 3.3V Switched Capacitor Digital PA in 16nm Fin-FET for Wi-Fi7 Applications
    0 Originality
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  • RTu2C-1: An Efficient, High Power Q-Band SiGe HBT Power Amplifier with a Compact Four-Way Wilkinson Power Combiner Balun for Emerging Very Low-Earth-Orbit SATCOM
    0 Originality
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  • RTu3C-4: A CMOS Fully Integrated 120-Gbps RF-64QAM F-Band Transmitter with an On-Chip Antenna for 6G Wireless Communication
    0 Originality
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  • RMo3A-5: A Compact Dual-Mode CMOS Power Amplifier Covering both Sub-6GHz and mm-Wave Bands for 5G NR
    0 Originality
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  • RTu4B-2: A 200-GHz Modulable Transceiver With 35-dB TX ON/OFF Isolation and 16Gb/s Code Rate for MIMO Radar in 130nm SiGe Process
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  • RMo1A-1: A 60-GHz Positive-Feedback-Based Transmitter Front-End with 22.8% PAEmax in 28-nm Bulk CMOS for Inter-Satellite Communications
    0 Originality
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  • RMo1B-5: A Reconfigurable Compact Multiband RF Bi-Directional Coupler for Sub-6GHz RF Front-Ends in RF SOI CMOS Switch Technology
    0 Originality
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  • RMo2A-4: Non-Coherent TX-RX Chipsets for J-Band Communication in 16-nm FinFET CMOS
    0 Originality
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  • RMo2C-4: A 2.3nJ/b 32-APSK Polar Phase-Tracking Receiver with Two-Point Injection Technique
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  • RMo3B-3: A 17.4–26.4-GHz Dual-Injection Injection-Locked Frequency Tripler Featuring Low Power Consumption and High Harmonic Rejection
    0 Originality
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  • RMo4A-2: A D-Band Power Amplifier with Optimized Common-Mode Behaviour Achieving 32Gb/s in 22-nm FD-SOI
    0 Originality
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  • RMo4C-2: A 4–26Gbaud Configurable Multi-Mode Non-Uniform EOM with Improved Twin PI for High-Speed Wireline Communication Achieving 3-µs EW/EH Evaluation and 0.99-R² Accuracy
    0 Originality
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  • RTu1B-2: A Fully Integrated Three-Channel Cryogenic Microwave SoC for Qubit State Control in ⁹Be+ Trapped-Ion Quantum Computer Operating at 4K
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  • RTu1C-2: A SAW-Less 3FLO-Suppression RF Transmitter with a Transformer-Based N-Path Switched-Capacitor Modulator Achieving -157.6dBc/Hz Output Noise and -61dBc CIM₃
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  • RTu2C-2: A Compact, Highly Linear Ku-Band SiGe HBT Power Amplifier Using Shared Single Center-Tap Four-Way Output Transformer Balun for Emerging Low Earth Orbit SATCOM Phased-Array Transmitter
    0 Originality
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  • RTu4C-1: 110–170GHz 25% Duty-Cycle Gilbert-Cell Frequency Doubler with 6.5dBm Peak Output Power in BiCMOS 55nm Technology
    0 Originality
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    0 Voters
  • RMo3C-5: A 26.5–35GHz High Linearity VGA with an RMS Phase Error of 0.9°–2.8° Utilizing a Novel Hybrid Coupling Technique in 45RFSOI
    0 Originality
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  • RTu4B-3: An On-Chip Antenna-Coupled Preamplified D-Band to J-Band Total Power Radiometer Chip in 130 nm SiGe BiCMOS Technology
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  • RMo1A-2: A Ka-Band 8-Element 4-Beam Transmitter Front End With Hybrid VGA and Symmetrical Transformer-Based Doherty PA
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  • RMo1C-1: A 2.4GHz, -19 dBm Sensitivity RF Energy Harvesting CMOS Chip with 51% Peak Efficiency and 24dB Power Dynamic Range
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  • RMo2B-1: An Octave Tuning Range Quad-Core VCO Using a Compact Quad-Mode Transformer-Based Inductor
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  • RMo2A-5: A ΣΔ-Modulated Linear-in-dB Attenuator for On-Chip Power Detection with 0.12dB Resolution in RF SOI CMOS Switch Technology
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  • RMo3B-4: A 278–348GHz 6th Harmonic Injection Locking Frequency Multiplier Based on 3rd Harmonic Injection Locking Oscillator in 130nm SiGe Process
    0 Originality
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  • RMo4A-3: Phased-Array-Compatible Area-Efficient D-Band Power Amplifiers in 45 RF SOI Based on Cascade Stacking
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  • RMo4C-3: A 10ns Delay Range 1.5GHz BW True-Time-Delay Array-Based Passive-Active Signal Combiner with Negative-Cap Stabilized RAMP for Fast Precise Localization
    0 Originality
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  • RTu1B-3: A Switchless Dual-Core Triple-Mode VCO Achieving 7.1-to-15.7GHz Frequency Tuning Range and 202.1dBc/Hz Peak FoM at 3.7 Kelvin
    0 Originality
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  • RTu1C-3: A 32.3dBm Quadrature Complex Domain Doherty Power Amplifier Based on Switched Constant-Current and Symmetrical Transformer Achieving 21.6% Average Power-Added Efficiency
    0 Originality
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  • RTu2C-3: An Efficient Ku-Band Two-Way Vertical-Like Power-Combining Power Amplifier Using Merged Inter-Stage Transformers Achieving 23–23.4dBm Psat and 45.2–46.6% Peak PAE in 65nm CMOS
    0 Originality
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  • RTu4C-2: A Low Conversion Loss 120GHz Passive IQ Down-Conversion Subharmonic Mixer with Multiphase LO Distribution in 28nm CMOS
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  • RMo4B-5: A 0.2-to-39.2GHz 66.2-fs Jitter and -71.3dBc Spur Sub-Sampling PLL Using DAC-Based Constant Control Voltage Compensator and Quad-Mode 2nd Harmonic Filtering Oscillator
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  • RTu4B-4: An E-Band FMCW Radar Receiver Achieving 38dB Cancellation for Arbitrary-Path Spillover Up to -10dBm and 5.7dB NF in 65nm CMOS
    0 Originality
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    0 Voters