IF1-22: A 25dBm 95–115GHz Coupler-Based Traveling-Wave MMIC Power Amplifier in GaAs pHEMT Technology
This paper presents a 95–115GHz power amplifier (PA) based on a coupler-enabled traveling-wave combiner/splitter network, implemented in a commercial 0.1µm GaAs pHEMT process. Directional couplers pro...
This paper presents a two-stage symmetrical wideband Doherty power amplifier (DPA) implemented on a 0.1 µm gate-length GaN-on-SiC HEMT technology. The DPA features a low-pass π impedance inverting net...
This paper presents the design of a nonuniform distributed power amplifier in 60 nm gallium nitride on silicon substrate, operating over a frequency range of 0.5 to 52 GHz. To achieve high output powe...
This paper describes the characterisation of an asymmetric Orthogonal Load Modulated Balanced Amplifier (OLMBA) in Doherty-like operation. The OLMBA was characterized in both CW using a single input a...
We demonstrate how quantum annealing can support the design of a electromagnetic structure — a Rotman lens. Since the Rotman lens design space spans several billion configurations and electromagnetic ...
A quantum random phased array (QRPA) for physical layer covert communication is presented. The QRPA uses true quantum shot noise to temporally mask the beam state, eliminating the need for pre-shared ...
In this work, we present ferroelectric metal-insulator-metal (MIM) diodes based on a 7 nm-thick zirconium oxide layer, deposited between two dissimilar electrodes (i.e., platinum and titanium/gold). O...
This paper presents a compact dual-band (DB) filter based on metal insert technology. It consists of three parts and utilizes a parallel connection of two single-band (SB) filters. The two filter case...
This paper presents a 32-way D-band power amplifier in Teledyne’s 250-nm InP HBT. A 2-finger common-emitter HBT was chosen as a unit cell. It provides a more uniform heating profile and a lower juncti...
In this paper, we present a D-Band power amplifier (PA) monolithic microwave integrated circuit (MMIC), manufactured in a gallium nitride (GaN)-on-silicon carbide (SiC) high electron-mobility transist...