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We1G-1: A Q-Band Ultra-Low-Jitter Subharmonically Injection-Locked Frequency Quadrupler with FTL and Switched-Capacitor Array
In this paper, a Q-band ultra-low jitter subharmonically injection-locked frequency quadrupler (SILFQ) with frequency-tracking loop (FTL) and 2-bit switched-capacitor array (SCA) is proposed using 90-...
We1G-2: A 22–34GHz CMOS Neutralization-Based Direct-Conversion I/Q Up-Converter for 1024-QAM Modulation
This paper proposes a 22–34 GHz neutralization-based direct-conversion in-phase and quadrature (I/Q) up-converter implemented using a 90-nm CMOS process. The up-converter comprises two active double-s...
We1G-3: A 14.5Gb/s, 2.75pJ/bit, Direct-Digital, Star-QAM Modulator and Co-Designed Frequency Multiplier Operating at 140GHz
This article presents a direct-digital, Star-QAM modulator with frequency up-conversion (×2). A push-push frequency doubler (PPFD) with integrated common node (CN) switches generates 2nd harmonic ampl...
We1G-4: Monolithic Implementation and Performance Comparison of Three Single Balanced Architectures for D-Band HEMT Mixers
Three mixers with different single balanced architectures are compared to tackle the implementation of fully monolithic integrated D-band receivers and transmitters with high-electron-mobility transis...
We1G-5: A DC-to-170GHz Direct-Coupled Mixer Achieving 47dB LO-RF Isolation in 250nm InP DHBT Technology
A DC-to-170-GHz down-conversion mixer was fabricated in 250-nm InP DHBT technology for VNAs. The chip is direct coupled, which integrates LO and RF baluns, a Gilbert mixer cell, and IF amplifiers. Thr...
We1H-1: LNA and Power Amplifiers for Operation up to 100GHz
This presentation provides an overview of the different applications for amplifiers for use between 1GHz and 100GHz and will highlight the market needs for both satellite and land-based communications...
We1H-2: A Ku-Band Input Harmonically Tuned Class-F GaAs MMIC Power Amplifier Achieving 28.4-dBm Psat and 56% Peak PAE
This paper presents a Ku-band input harmonically tuned class-F GaAs MMIC power amplifier (PA). The PA incorporates a simplified class-F output matching network (CF-OMN) using short-length transmission...
We1H-3: A Continuous-Mode Class-F-1 X-Band GaN MMIC Power Amplifier with a 29.7% Fractional Bandwidth
This paper presents a high-performance X-band continuous-mode Class-F-1 MMIC power amplifier (PA) in 0.25-µm GaN technology. Design considerations and challenges of continuous-mode Class-F-1 (CCF-1) h...
We1H-4: An X-Band 35-dBm Compact Continuous-Mode Class-J Power Amplifier in 0.25-µm GaN Process
This paper presents an X-band 35-dBm continuous-mode class-J power amplifier (PA) implemented using 0.25-µm GaN process, featuring a compact chip size of 2.5 mm² and exceptional performance characteri...
WSL-6: E- and D-Band Common-Base Power Amplifiers in SiGe-BiCMOS with Performance Enhanced by Current Clamping and Device Stacking
With 5G established and 6G research ongoing, rising capacity drives the exploration of higher frequency bands. Power amplifiers (PA) drain most of a transceiver’s power. Still, maintaining efficiency ...