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RMo3C-4: Circuits-Informed Machine Learning Technique for Blind Open-Loop Digital Calibration of SAR ADC
This work presents a supervised machine-learning (ML) approach for blind digital calibration of SAR ADCs without requiring prior knowledge of errors. A 2-layer neural network learns the difference bet...
RMo3C-5: A 17mW 8-Element 2-Beam Hybrid Slepian Beamforming Receiver with SAR-ADC-Based Charge-Domain Multiply and Accumulation
True-time-delay (TTD) beamformers are very desirable for wideband wireless communication but existing approaches suffer from high hardware costs especially for large-scale arrays. In this work, a hybr...
RMo4A-1: A D-Band Direct-Modulation 64-QAM Transmitter with On-Chip Digital Calibration in 16nm FinFET Technology
This paper presents a D-band direct-digital transmitter that employs RF-DACs to perform modulation in the RF domain. It achieves 64-QAM with a maximum data rate of 48 Gb/s and an EVM of -23.8 dB. Mean...
RMo4A-2: A 110 to 122-GHz Four-Channel Oversampling Digital-to-Phase Transmitter for Scalable, Energy-Efficient Arrays
An oversampling digital-to-phase (ODP) transmitter (TX) is proposed based on scaling independent channels consisting of a multiplier chain (XN), two-bit quadrature phase shifter (PS), and a power ampl...
RMo4A-3: A 45Gb/s D-Band Hybrid Star-QAM-OOK Transmitter Using a Quad-Harmonic Modulator with Constant Impedance Balanced Architecture in 90nm SiGe BiCMOS
This work presents a D-band reconfigurable Quadrature Second Harmonic modulator. The proposed modulator features a quadrature frequency doubler with integrated shunt switches at the common-emitter nod...
RMo4A-4: A 200-GHz Phased Array Transmitter with Element-Level Scanning Antenna for ±45° Scanning Range with 0.71λ₀ Antenna Pitch
This paper presents a compact 200 GHz SiGe-based two-channel phased array with an on-chip integrated multiplier-by-6 driver chain. Each channel is composed of an on-chip element-level scanning antenna...
RMo4A-5: A 270-to-300GHz Amplifier-Last Transmitter with 6.7dBm Peak Output Power Using 130nm SiGe Process
This paper presents an amplifier-last transmitter (TX), operating from 270-to-300 GHz, in a 130 nm SiGe BiCMOS process. The TX is composed of a 250 GHz multiplier-by-6 local oscillator (LO) chain, an-...
RMo4B-1: A 23–40GHz Compact LNA with Dual-Path Noise-Cancelling Technology Enabled by a Quad-Coil Coupled Transformer
This paper presents a 23–40 GHz low-noise amplifier (LNA) that employs dual-path noise-cancelling technology. The proposed noise-cancelling method, implemented through a quad-coil coupled transformer ...
RMo4B-2: A 3.23dB Average NF and 2.32dB Minimum NF V-/E-Band Common-Gate/Common-Source Joint-Feeding LNA with Three-Line Coupler Input Matching for Simultaneous Noise/Power Matching
The proposed and implemented V/E-band low noise amplifier (LNA) in 22nm CMOS FDSOI covering 3dB bandwidth of 60.6 to 74.4GHz. It achieves a measured average noise figure (NF) of 3.23dB averaged over t...
RMo4B-3: A 22-nm CMOS 3.5–7.2GHz Wideband FEM with a Balanced-Power-Combining DPA and a Dual-Resonant Input Matching LNA
This paper presents a 3.5–7.2 GHz wideband front-end module (FEM) implemented in 22-nm CMOS technology. The FEM consists of a digital power amplifier (DPA) and a low noise amplifier (LNA). The DPA uti...