Your search produced 1255 results

We2H-2: A High-Efficiency GaAs HBT Power Amplifier for 6G FR3 Applications
A two-stage, single-ended amplifier has been designed for 6G FR3 band handset application in a commercial 6-inch GaAs HBT process. At 12 GHz, the power stage of this amplifier achieves an output power...
We2H-3: A 9-to-13.5GHz 29.2-dBm-PSAT 44.4%-PAE Power Amplifier Using Extended Cascode Cores and 4-to-1 Folded Transformers in 130-nm CMOS SOI
This paper presents an X-/Ku-band 8-way power amplifier (PA) utilizing extended cascode cores (ECCs) and output 4-to-1 folded transformers (FTs) to obtain high-efficiency/linearity/power density. The ...
WSL-5: mm-Wave High Efficiency, High Linearity GaN HEMT, GaAs and InP HBT Power Amplifiers
High-efficiency, high-linearity III-V mmWave power amplifiers (PAs) are critical for 5G, satellite communications, and radar applications. This talk summarizes advancements in III-V high-power technol...
We2H-4: A Compact Doubly Neutralized Ku Band Power Amplifier with 39% Peak PAE and 23 dBm Output Power in 22FDX+ EDMOS for 6G FR3
This paper presents a compact, doubly neutralized, two-stage power amplifier (PA) utilizing the new EDMOS device in 22FDX+, designed for 6G Frequency Range 3 (FR3) and Ku band applications. Cascode do...
We2H-5: A 24GHz Power Amplifier with a Switching Output Combiner for a Dual-Mode MIMO Radar System
This paper presents a versatile 24 GHz power amplifier (PA) tailored for high-performance MIMO radar systems, enabling seamless operation across both Binary Phase Modulation (0-π BPM) and Time Divisio...
We3B-1: From Components to Turn-Key Systems: Innovations in Aerospace Through Heterogeneous Integration
Recent advances in key areas such as low-loss RF materials, monolithic devices, ceramics, printed wiring board processing and heterogeneously integrated electronics are driving significant innovations...
We3B-2: A 60-GHz RadCom Down-Converter in 22-nm CMOS FDSOI for Short-Range Hand Gesture Sensing and High-Data-Rate Proximity Communication
This paper presents a novel 60 GHz down-converter for joint radar and communication (RadCom) systems, designed for mobile devices. It integrates both functions on a single chip. In radar mode, it achi...
We3B-3: A 71-to-76GHz 8-Element Switchless Isolated Spectrum Phased-Array Transceiver with Direct-Modulation and Reflectionless Sliding-IF
In this paper, a 71–76GHz 8-element switchless isolated spectrum phased-array transceiver (TRX) using the direct-modulation and reflectionless sliding-IF is proposed. The quadrature direct-modulation ...
We3B-4: A D-Band Front-End T/R MMIC in a 70-nm GaN HEMT Technology
This paper demonstrates a D-band transmit/receive (T/R) front-end MMIC based on a 70-nm GaN-on-SiC HEMT technology. It features a small chip size of only 3mm². Hence, it allows seamless integration in...
We3B-5: A 71–76GHz Phased-Array Transmitter with Nested-Coupler-Based Phase Shifter in 65nm CMOS
This paper presents a four-element phased-array transmitter in 65 nm CMOS operating in the 71–76 GHz band. The transmitter features a nested-coupler-based phase shifter, achieving a full 360° phase-sh...