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We2E-4: Rectangular Waveguide-Based CRLH Frequency Scanning Array Antenna Operating at W-Band
We present the design, modeling, and characterization of a prototype metallic waveguide-based composite right/left-handed (CRLH) frequency scanning array (FSA) operating in the frequency range of 77.8...
WSL-8: Stacked-FET CMOS Power Amplifier for mm-Wave and Sub-THz Applications
In mm-wave and sub-THz systems, power amplifiers (PAs) play a crucial role in delivering high output power while minimizing power consumption to meet the overall system link budget and performance. Ho...
We2E-5: High-Power Handling, Amplitude and Phase Stable, Full Band WR-06 Rotary Joint Based on TE01 Mode
This paper presents the industry’s first WR-06 full waveguide band rotary joint. The joint is a novel design, which is capable of high-power handling and delivers superior amplitude and phase stabilit...
We2E-6: Optimizing Material and Shape of 3D-Printed Waveguide Terminations
This paper investigates the impact of shape and material (Ice9, PEKK-ESD, and PEEK-ESD) on the performance of waveguide terminations, with the goal of designing Ku-band (10.7–13.75 GHz) terminations t...
We2G-1: A 13.7–41GHz Ultra-Wideband Frequency Doubler with Cross-Coupled Push-Push Structure Achieving 10.6% Peak Efficiency and 7-dBm Psat
This paper presents a 13.7–41 GHz frequency doubler with high conversion gain and efficiency. A cross-coupled push-push structure is proposed to increase the high-frequency output power and extend the...
We2G-2: A 110–130-GHz Frequency Quadrupler with 12.5% Drain Efficiency in 22-nm FD-SOI CMOS
A high-efficiency frequency quadrupler (×4) operates between 110 and 130 GHz. The design consists of two push-pull doublers and three differential amplifiers that improve output power and conversion g...
We2G-3: A D-Band ×15 Frequency Multiplier Chain in 45nm SiGe BiCMOS for Board-Level Packaged Array Applications
This paper presents a D-band frequency multiplier chain in 45nm SiGe BiCMOS technology. It achieves a high multiplication factor of 15 for large multi-chip packaged array applications. The design cons...
We2G-4: A 100–180-GHz InP Distributed Frequency Doubler with 11.5dBm Peak Output Power Using a Power-Bandwidth Enhancement Technique
This paper presents a wideband distributed frequency doubler (DFD) operating from 100 to 180 GHz, generating an output power from 11.5 to 8.5 dBm. To achieve a flat response over the entire 3-dB outpu...
We2G-5: A 220–280GHz InP Frequency Doubler with a Compact, Low-Loss Folded Marchand Balun
We present a 220–280 GHz indium phosphide (InP) push-push frequency doubler with a compact, folded Marchand Balun. The doubler generates a measured peak output power of 5 dBm and a peak conversion gai...
We2H-1: Efficient InGaP/GaAs HBT Differential Power Amplifier Using a New Adaptive Cross-Capacitor Bias Circuit for 6G FR3 Handset Applications
This paper presents a 7–8.5 GHz differential power amplifier (PA) using a new adaptive cross-capacitor bias circuit (ACB) for handset application. The ACB is implemented as an adaptively applicable in...