This paper reports a fully aluminum (Al)-based 0.25 µm GaN-on-Si HEMT process for FR3 application. HEMT transistor was designed in D-mode based on AlGaN/GaN structure equipped with an AlN spacer and a...
This paper presents the design and fabrication of a heterogeneous power amplifier (PA) incorporating gallium nitride (GaN) high electron mobility transistor (HEMT) dielets into a single-crystal diamon...
This paper presents a transformer-based voltage-controlled oscillator (VCO) with a digitally controlled common-mode impedance tuner that adjusts the second-harmonic voltage phase. A transformer-couple...
This paper presents a 5.56–9.09 GHz octa-core dual-mode digitally controlled oscillator (DCO) based on a multi-tap three-turn inductor. Owing to a frequency-independent passive gain of up to 3 and the...
This paper presents a low phase noise (PN) balanced inverse-class-F (class-F-1) voltage-controlled oscillator (VCO). The proposed trifilar transformer integrates dual symmetrical class-F-1 VCO cores w...
A technique is introduced for generating four or more multiphase signals by coupling Class-B cores through a shared tail current source. This approach eliminates additional coupling devices while enab...
This paper presents a dual-core dual-mode series-resonance (SR) CMOS voltage-control-oscillator (VCO). By integrating the multi-mode technique with the SR-VCO, this work achieves ultra-low phase noise...
This paper presents a novel 3D-redistribution layer (3D-RDL) passive technology for a high-efficient broadband Doherty power amplifier (DPA). The comparison with the DPA reference based on bondwire te...
This paper presents a 7-GHz GaN-on-Si HEMT Doherty power amplifier (DPA) with a fully integrated on-chip Doherty combiner. The hybrid MMIC-module architecture ensures precise Doherty operation with en...
This paper presents prototype designs for a 60GHz LNA and PA in a leading-edge logic process node featuring gate-all-around (GAA) CMOS transistors and backside power delivery (BSPD). Layout optimizati...