This paper presents a precise, calibration-free 220-to-260-GHz 5-bit phase shifter based on a passive trombone-like topology, implemented with reverse-saturation NPN bipolar junction transistors (BJTs...
AI interconnect scaling requires compact, low-power, low-latency co-packaged optics (CPO). We demonstrate a 4-channel 256 Gb/s laser-forwarded coherent CPO optical link using 4-Offset-QAM modulation a...
This work presents 28nm CMOS transceiver (TRX) circuitry for 3D integration with silicon-photonic (SiPh), incorporating micro-ring modulators (MRMs) and p-i-n photodiodes (PDs) to enable high-density ...
This work presents an 8×64 Gb/s four-level pulse amplitude modulation (PAM-4) retimed optical receiver (ORX) with forwarded clock for universal chiplet interconnect express (UCIe) compliant optical I/...
Addressing the stringent requirements for high linearity and compact footprint in die-to-die (D2D) interfaces, this paper presents a 7-bit adaptive phase interpolator (PI) employing a segment-squeeze ...
An enhancement-mode recess-free InAlGaN/GaN HEMT on silicon is demonstrated for millimeter-wave RF applications by combining a polarization-engineered ultra-thin InAlGaN barrier with a high-quality LP...
This paper presents a comprehensive study of the thermal behavior of a 0.1-µm GaN HEMTs technology. An accurate electro thermal model is developed as an intermediate interface between the HEMT device ...
This paper reports a fully aluminum (Al)-based 0.25 µm GaN-on-Si HEMT process for FR3 application. HEMT transistor was designed in D-mode based on AlGaN/GaN structure equipped with an AlN spacer and a...
This paper presents the design and fabrication of a heterogeneous power amplifier (PA) incorporating gallium nitride (GaN) high electron mobility transistor (HEMT) dielets into a single-crystal diamon...
This paper presents a transformer-based voltage-controlled oscillator (VCO) with a digitally controlled common-mode impedance tuner that adjusts the second-harmonic voltage phase. A transformer-couple...