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Nowadays, last generation of GaN devices for microwave and mm-wave applications are incredibly high-performing with more and more advanced electrical characteristics able to guarantee high power level...
Deep-level trap centers are still used in AlGaN/GaN HEMT devices to prevent buffer-current leakage. Unfortunately, these defects induce long-term memory effects in these devices, which significantly i...
This talk is dedicated to the characterization of GaN RF devices for the ever-increasing needs of the communications industry. Firstly, a unified framework is presented for identifying relevant metric...
Gallium nitride (GaN) high electron mobility transistors (HEMTs) are a critical technology for numerous RF and microwave applications including radar, communications, satellite communications, and ele...
This paper presents a fully integrated Ka-band frequency-modulated continuous wave (FMCW) radarsystem-on-chip (SoC). To enable compact-size, low-cost and quick-to-deploy sensors, the FMCW radar transc...
This talk will bring the distinguished audience into the IoT land, presenting first the integration challenges. We will then discuss about the FD-SOI CMOS technologies, and how their particular featur...
A 135 GHz frequency modulated continuous wave (FMCW) radar system is presented using 1Tx and 4Rx chips in 28-nm CMOS. The radar system is fully integrated on a planar substrate using an active array a...
This paper addresses the need for drones and UAVs to sense their environment for autonomous operation. Therefore, it presents a scalable 120 GHz 8×8 MIMO radar system with 10 GHz bandwidth. It utilize...
This paper introduces a 94 GHz 8Tx-16Rx high-resolution FMCW radar system utilizing single-channel Tx and four-channel Rx chipsets with high-ratio (×24) frequency multipliers. A robust and compact dir...
As communication and radar systems advance into the sub-THz frequency range, the Hartley receiver plays an increasingly critical role in enabling heterodyne front-ends. This paper introduces an innova...