Your search produced 886 results

Th2B-2: A 0.1–3.2GHz Reconfigurable LPF With Peaking Reducing and Selectivity Enhancement Using Adaptive Impedance Transformation
This paper presents an on-chip low-pass filter (LPF) for cognitive radio in a 130-nm SiGe BiCMOS technology. The LPF achieves a broad tuning range of 0.1–3.2 GHz with a 100 MHz step. To address gain v...
Th2B-3: High Isolation CMOS TDD RF Front-End Using Sandwich-Type Concentric Vortical Transformer and Leakage Elimination Technique
This paper presents a 90-nm CMOS radio-frequency (RF) front-end using the proposed sandwich-type concentric vortical transformer (CVT) for transmit/receive (TX/RX) switching in time-division duplexing...
Th2B-4: A Monolithic GaN based Supply Modulator with Dual-Antibootstrap Level Shifter for Envelope Tracking Application
We report a Monolithic GaN based Supply Modulator (SM) and verify it for envelope tracking power amplifier (ET-PA). A signal amplifier is integrated in the SM and a novel Dual-Antibootstrap Level Shif...
Th2B-5: KEYNOTE: Understanding Linearization and its Recent Developments
Linearization has become of enormous importance because of the need to efficiently send greater and greater amounts of information over a limited spectrum. It is of special value at frequencies below ...
Th2C-1: 220-GHz High-Efficiency Power Amplifiers in 250-nm and 130-nm InP HBT Technologies Having 14.4–25.0% PAE and 40–60mW Pout
We report two 220-GHz solid-state power amplifiers (PA, SSPA) having high output power (Pout) and record power-added-efficiency (PAE). The first amplifier (PA-1) uses a 250-nm InP HBT technology. The ...
Th2C-2: Low-Noise Power-Amplifier MMICs for the WR4.3 and WR3.4 Bands in a 35-nm Gate-Length InGaAs mHEMT Technology
This paper presents two distributed low-noise power-amplifier monolithic microwave integrated circuits (MMICs). The two amplifiers (DA1 and DA2) target the WR4.3 (170-260 GHz) and WR3.4 bands (220-330...
Th2C-3: Highly-Compact 20-mW, 270–320-GHz InGaAs mHEMT Power Amplifier MMIC
This paper describes a highly compact topology for InGaAs mHEMT based THz PA MMICs. In this context, a unique vertical DC bias distribution between the parallel common-source devices has been develope...
Th2C-4: Analysis and Design of Differential Complex Neutralization Power Amplifiers for Efficient-Yet-Linear High mm-Wave Applications
This paper presents a systematic design and optimization methodology to enhance the power gain of a given device towards its theoretically maximum stable power gain 4U, U as the Mason’s Unilateral pow...
Th2C-5: A 10-230-GHz InP Distributed Amplifier Using Darlington Quadruple-Stacked HBTs
This paper reports a 10-230-GHz Indium Phosphide distributed amplifier (DA) using Darlington quadruple-stacked HBTs. Stacked HBTs are combined with Darlington cells in a DA to achieve wide bandwidth o...
Th2E-1: Scanning Microwave Microscopy Subsurface Detection of Magneto-Impedance Effect in Thin Film Permalloy
Permalloy-based thin films are ferromagnetic materials with excellent magnetic properties, and their detection is appealing for several applications. Here, a Scanning Microwave Microscope is used to c...