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This paper presents a study characterizing three conventional substrate dielectric materials, along with one new 3-D printed dielectric (RADIX), all supplied by Rogers, over the frequency range of 50 ...
A novel Q-Choked Sapphire Sandwiched Resonator (Q-SSR) is designed, fabricated, and validated for fast and non destructive testing of materials between upper microwave and lower mm-Wave frequencies. I...
A novel radio-frequency microfluidic dielectric sensor based on coupled stepped-impedance resonators (SIRs) is introduced in this study. The sensor utilizes two SIRs with weak electrical coupling to i...
This paper presents the design of a high-efficiency and high-power E-band (69–76 GHz) Doherty power amplifier (DPA) fabricated on a IAF 100-nm gate-length GaN-on-SiC HEMT technology. The DPA adopts an...
This paper introduces a four-stage, eight-way power amplifier monolithic microwave integrated circuit (MMIC) for E-band operation. Fabricated using 0.10-µm GaAs pHEMT technology, the MMIC integrates a...
This article presents a generalized, compact, wideband, low-loss four-way on-chip distributed power combiner designed for high-power and high-efficiency mm-wave power amplifiers (PAs). The measured re...
Simultaneous Transmit and Receive (STAR) technologies, including full-duplex and frequency division duplexing techniques introduce the critical challenge of self-interference (SI) from TX to RX. In th...
This paper presents a 115–129 GHz power amplifier (PA) with a record PSAT in 40-nm bulk CMOS. The PA is based on a 4-stage differential common-source with cross-coupled capacitive neutralization with ...
This paper presents a broadband and power-efficient monolithically integrated optoelectronic transmitter based on a segmented Mach-Zehnder modulator. The chip has been fabricated in the 250nm IHP SiGe...
This paper presents an ultra-broadband in-phase and quadrature (IQ) modulator in 250-nm InP heterojunction bipolar transistor (HBT) technology for a multiplexing-DAC subsystem enabling high-symbol-rat...