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Th3A-3: Aerosol Jet Fully 3D Printed RF Attenuator Using Resistive Ink
In this paper, aerosol jet printing is used to print the substrate, microstrips, and resistive material to realize a fully additively manufactured Pi configuration RF attenuator. The current target at...
WSI-7: Opportunities and Challenges on the Next Generation Concurrent Reconfigurable Multi-Radio IoT Devices
With an increasingly advanced IoT device wireless landscape, demands increase not only for seamless and secure connectivity for smart home and industrial use cases, but also for the development of fut...
Th3A-4: An Agile Additively Manufactured 5G/mm-Wave RF Front-End with Multi-Layer Conformality and Printed RF VIAs for Ultra-Wideband and Miniaturized Systems
This paper presents the first fully additively manufactured (AM) multi-layered RF front-end (RF-FE) for mm-wave frequencies (20-30 GHz), integrating active devices, passive printed structures, and RF ...
Th3A-5: Integration of Millimeter-Wave Air Filled Cavities and Filters Using Vertically Aligned Carbon Nanotubes
This work is a step towards the 3D integration of millimeter-wave and THz circuits and subsystems with a nano-packaging technology using vertically aligned carbon nanotubes (VACNTs). In doing so, we h...
Th3B-1: Deep Level Effects and Hot-Electron Reliability in Scaled GaN HEMTs
Carbon-related defects, introduced as doping or due to contamination during MOCVD growth, can induce dispersion effects and threshold voltage instability in GaN-based HEMTs. Back-barriers, consisting ...
Th3B-2: On-Wafer Characterization of K-Band to V-Band GaN IMPATT Diodes
High-gain GaN impact-ionization avalanche transit-time (IMPATT) diodes have been fabricated and experimentally characterized. The devices feature a “Hi-Lo” design; temperature dependent reverse I-V me...
Th3B-3: AlN/GaN MIS-HEMT With GeN Gate Dielectric for mm-Wave Applications
In this work, a high-performance AlN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) with germanium nitride (GeN) as gate dielectric was fabricated. The gate dielectric ...
Th3B-4: Influence of Double-Deck T-Gate Structures on Cut-Off Frequency in Al0.3Ga0.7N/AlN/GaN HEMTs
This study investigates the impact of various T-gate structures on the performance of Al0.3Ga0.7N/AlN/GaN HEMTs fabricated on SiC substrates. Five T-gate designs were analyzed, comprising a convention...
Th3B-5: Small- and Large-Signal Characterization of RF Substrates Down to Cryogenic Temperatures
This work presents for the first time, the RF large-signal characterization of standard, high-resistivity and trap-rich substrates, along with small-signal characterization, down to the temperature of...
Th3C-1: Unilateral Single-Pole Multi-Throw Filtering Switch Using Spatiotemporally Modulated Resonator Arrays
This paper presents a novel unilateral single-pole multi-throw (SPMT) switch with co-integrated RF filtering functionality. It is based on spatiotemporally-modulated coupled resonator arrays whose mod...