We present a novel approach to realize a microwave power meter suitable for cryogenic environments, based on a modified Variable Temperature Stage (VTS). The method exploits the AC/DC transfer of powe...
InP heterojunction bipolar transistor (HBT) technologies have significant power gain at frequencies greater than 100-GHz. Power amplifiers and integrated circuits have been demonstrated with state-of-...
This paper presents prototype designs for a 60GHz LNA and PA in a leading-edge logic process node featuring gate-all-around (GAA) CMOS transistors and backside power delivery (BSPD). Layout optimizati...
This talk will summarize Lincoln Laboratory activity in panel-based active phased array development for a variety of applications. Design solutions that balance operating frequency, sensitivity, therm...
In response to the growing demand for wideband monolithic integrated front-ends, this work investigates passive double balanced mixers in a 35-nm gate-length InGaAs high-electron-mobility transistor (...
Digital beamforming solutions above 100 GHz require large arrays with high power consumption and control requirements. An alternative is to eliminate excessive amplitude and phase weight calibration p...