Microwave Week 2020 Dashboard

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We2G-2: A 110–130-GHz Frequency Quadrupler with 12.5% Drain Efficiency in 22-nm FD-SOI CMOS
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We2H-2: A High-Efficiency GaAs HBT Power Amplifier for 6G FR3 Applications
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We3B-2: A 60-GHz RadCom Down-Converter in 22-nm CMOS FDSOI for Short-Range Hand Gesture Sensing and High-Data-Rate Proximity Communication
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We3B-6: A 71–76GHz Four-Element Phased-Array Receiver with Compact Footprint in 65-nm CMOS
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We3C-5: An Ultra-Compact D-Band SIW Filter with Multifunction Transitions to Coplanar Input/Output
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We3D-6: Analysis of a Self-Injected Super-Regenerative Oscillator for Motion Sensing
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We3H-2: A Broadband Doherty-like Load-Modulated Balanced Amplifier with an Optimized Impedance Transformation Ratio in InGaP/GaAs HBT Process for Handset applications
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IF1-2: GaN-Based Power Amplification Unit for the Europa Clipper Mission
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IF1-8: A 28GHz Dual-Mode Power Amplifier for Enhanced Load Resiliency or Back-Off Efficiency Enhancement in 22nm FDSOI Process
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IF1-15: A 230-GHz 3.5-dBm Phase-Shifter-Embedded Frequency Tripler with 360° Phase-Shifting Range in 40-nm CMOS
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IF1-20: A THz Attenuator Based on Voltage-Tunable Whispering Gallery Mode Resonator
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IF1-25: 2200W High-Efficiency Amplifier Module Covering 325MHz and 352MHz Applications
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IF1-31: Analysis of High-Efficiency Power Amplifiers Exploiting Input Harmonics and Nonlinear I-V Knee Characteristics
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IF1-36: Multi-Functional Modulated Surface Based on M-Type Ferrite for mmWave Application
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IF1-42: Heart Rate Variability Monitoring Using a Chord-Based Algorithms in Low-IF CW Radar Systems
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Th1A-1: A D-Band Tx FOWLP Module with Silicon-Based Resonator Antenna Array
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Th1A-3: Evaluation of Stacked Structure for 160GHz End-Fire Type Compact Antenna-in-Package Considering Thermal Design
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Th1B-4: Wideband Sub-THz Evanescent-Mode Waveguide Switch Using Reconfigurable Photogenerated Solid-State Plasma Elements
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Th1D-1: An EVA-Based High-Power and Absorptive Frequency-Selective Plasma Limiter
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Th1F-1: A High-Efficiency E-Band GaN Doherty Power Amplifier with 35.7dBm Output Power and 22.8%/16.8% Peak/6-dB Back-Off Efficiency
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Th1G-2: DC-to-89-GHz AMUX-based IQ Modulator in 250-nm InP HBT Technology for Multiplexing-DAC Subsystem
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Th1G-6: A Bi-Directional 5-Bit 131.5–150.5GHz Digital-Programmable Phase Shifter with 2.1°/0.3dB RMS Phase/Gain Errors in 40nm CMOS
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Th2A-5: Thin Film Transmission Lines on Low-k Polymer Films for Sub-THz Applications
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Th2B-5: A 36GHz Trilayer AlN/ScAlN/AlN Periodically Poled FBAR
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Th2D-1: Traceable S-Parameter Measurements up to 165 GHz using 0.8 mm Coaxial Standards
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Th2F-2: 300-GHz-Band InP HBT Power Amplifier Module Enabling 280-Gbps 0-dBm Signal Generation with Digital Predistortion
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Th2G-1: A Ku-Band CMOS LNA with Symmetric Polarity-Selective Transformer for Efficient 180° Phase Shifting
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Th2G-6: First Demonstration of MMIC Low-Noise Amplifiers Operating at Ka-Band Realized with Enhancement-Mode Gallium Nitride HEMTs
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Th3A-3: Aerosol Jet Fully 3D Printed RF Attenuator Using Resistive Ink
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Th3B-2: On-Wafer Characterization of K-Band to V-Band GaN IMPATT Diodes
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Th3B-5: Small- and Large-Signal Characterization of RF Substrates Down to Cryogenic Temperatures
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Th3D-2: Integrated Solution for Linear and Non-Linear Single-Touchdown On-Wafer Characterization of D-Band Mixers
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Th3F-2: A D-Band InP Power Amplifier Featuring Fully AI-Generated Passive Networks
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Th3G-2: An 8–12.2GHz CMOS Low-Noise Amplifier with Partially Tail-Coupled Transformer and Large-Transistor Achieving 1.8dB Average NF
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WSE-2: Implementation of an Open-Source 5G SA FR2 End-to-End Testbed with the USRP
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WSM-2: 6G Optical Wireless Networks
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WSH-10: Progress in Commercial Realization of mm-Wave Heterogeneous Circuits
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WSA-2: Beyond All-Digital PLL for RF and mm-Wave Frequency Synthesis
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WSO-2: Progress in Control Electronics for Scalable Trapped-Ion Quantum Computing
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WSJ-6: How to Ensure Flexible and Efficient Use of Spectrum, from Advanced 5G Doherty Power Amplifiers to Digitally Assisted Wideband PA for 6G BTS
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WSC-1: State-of-the-Art Microwave Device Modeling Enabled by Artificial Intelligence and Machine Learning
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WSK-3: THz Semiconductor Electronics
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WSP-5: Next Generation mm-Wave Technology: Beamforming with Joint Phase and Time Array
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WMI-2: Classical Electromagnetic Considerations in Designing Superconducting Qubit Devices
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WME-4: Design Aspects of Waveguide Polarizers and Orthomode Transducers
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WML-1: Fundamentals of Method of Moments
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WMD-6: Design and Fabrication of Phononic Integrated Circuits in Scandium Aluminum Nitride
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WMB-1: Development and Characterization of Electronic-Based Noise Sources to 750GHz
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WMM-9: Reciprocal Full-Duplex FMCW Radar Systems with Self-Interference Cancellation for High Accuracy Distributed Radar Networks
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WMA-1: Advanced Techniques for 5G PA and Front-End Modules Packaging and Thermal Management
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Microwave Week 2020 Dashboard

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