Microwave Week 2020 Dashboard

Technical Session Audience Rating IMS

Displaying 2201 - 2250 of 2742
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  • We3B-5: A 71–76GHz Phased-Array Transmitter with Nested-Coupler-Based Phase Shifter in 65nm CMOS
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  • We3C-4: A 10-17 GHz Continuously Tunable CMOS Filter with FlexibleBandwidth Control Based on Mode-Switching Inductors
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  • We3D-5: Knowledge-based Extrapolation of Neural Network Model for Transistor Modeling
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  • We3G-5: A 134GHz High Efficiency High Power Fundamental Oscillator in 16nm p-FinFET with 12dBm Output Power and 6.5% DC-to-RF Efficiency
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  • IF1-2: GaN-Based Power Amplification Unit for the Europa Clipper Mission
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  • IF1-7: A TSPC mm-Wave Frequency Divider with up to 50GHz Input Frequency in 12nm FinFET Bulk CMOS
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  • IF1-14: New Coaxial Interconnection — Application to Wilkinson Dividers/Combiners
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  • IF1-20: A THz Attenuator Based on Voltage-Tunable Whispering Gallery Mode Resonator
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  • IF1-24: Parallel Differential-Line Fed Planar Aperture Antenna-in-Package with Signal Lines Isolated from IC in 300-GHz Band
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  • IF1-29: GaN Trap Model Extraction Based on MHz Load-Line Measurements
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  • IF1-35: An Effective Basis Function Generation Structure for Digital Pre-Distortion in Wideband Scenarios
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  • IF1-43: A Compact Brick-Type 40GHz-Band DBF Transmit Antenna Module Using Direct Digital RF Technology
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  • Th1A-1: A D-Band Tx FOWLP Module with Silicon-Based Resonator Antenna Array
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  • Th1A-4: A Wideband W-Band Slotted Over-Mode Cavity Array with Dumbbell-Shaped Holey-EBG Units Based on Metallic Silicon-Based Process
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  • Th1C-1: Innovative Hybrid Stripline Guiding Structure for Wideband Crossover Implementation
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  • Th1D-3: Temperature and Humidity Effects on Electromagnetic Waves Utilizing 140GHz Radar Measurements
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  • Th1F-2: E-Band Power Amplifier with 32.2dBm Psat, 31.3dBm OP1dB Utilizing Commercial 0.10-µm GaAs pHEMT Technology
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  • Th1G-3: A 132GHz SiGe BiCMOS Sampler for Linear Front-Ends
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  • Th2A-1: Novel Low-Loss Shielded Interconnects for D-band/sub-THz Applications Using Microscale Metal Printing Technologies
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  • Th2B-2: Low-Loss Longitudinal Leaky SAW Filter with 1350MHz Bandwidth on LiNbO₃/SiO₂/SiC Platform for Wi-Fi 7
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  • Th2C-1: A Reconfigurable Filtering Circulator/Isolator with Continuously Controllable Center Frequency and Insertion Phase
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  • Th2D-2: Millimeter-Wave Wideband Active Load-Pull System Using Vector Network Analyzer Frequency Extenders
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  • Th2F-2: 300-GHz-Band InP HBT Power Amplifier Module Enabling 280-Gbps 0-dBm Signal Generation with Digital Predistortion
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  • Th2G-2: A 130GHz 360° Gain-Invariant Phase Shifter with 5.625° Phase Resolution, 0.19° RMS Phase Error and < 0.56dB RMS Gain Error
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  • Th2G-6: First Demonstration of MMIC Low-Noise Amplifiers Operating at Ka-Band Realized with Enhancement-Mode Gallium Nitride HEMTs
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  • Th3A-5: Integration of Millimeter-Wave Air Filled Cavities and Filters Using Vertically Aligned Carbon Nanotubes
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  • Th3B-3: AlN/GaN MIS-HEMT With GeN Gate Dielectric for mm-Wave Applications
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  • Th3C-2: Tunable Dual-Band Coaxial Filter with Independent Band Control Using a Single Tuning Element Per Band
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  • Th3D-3: Characterization Approaches to Reduce Process Variation Dependencies for On-Wafer Power Calibration Transfer Devices in Bi/CMOS Technologies
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  • Th3F-3: AI-Assisted Template-Seeded Pixelated Design for Multi-Metal-Layer High-Coupling EM Structures: A Ku-Band 6G FR3 PA in 22nm FDX+
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  • Th3G-3: Broadband LNA with Dual-Resonance Matching Network with Capacitive Feedback for Improved Gain and Noise Figure Using 0.1-µm GaAs pHEMT Technology
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  • WSD-8: Living Networks: Bioelectronic IoT and the Future of Secure, Energy-Efficient Wireless Systems
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  • WSG-9: Bringing Commercial Cellular Access to Space
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  • WSH-7: Advances in Wafer-Level Packaging (WLP) and Heterogeneous Integration for mm-Wave Phased Arrays
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  • WSL-5: mm-Wave High Efficiency, High Linearity GaN HEMT, GaAs and InP HBT Power Amplifiers
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  • WSI-9: Intelligent Self-Interference Mitigation for Integrated Radios
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  • WSN-5: Interconnect and Control Challenges in Silicon Spin Qubit Quantum Computers
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  • WSF-5: Navigating the Challenges of 300GHz CMOS Transceivers: A Comparative Analysis with Photonics-Based and D-Band CMOS Configurations
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  • WSB-4: Sensing with mm-Wave 5G: Extracting Spatial Information Leveraging Directional Beams
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  • QUB1-2: Microwave Engineering of Quantum Computers
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  • AIB1-1: AI and Machine Learning for Microwave Design - An Introduction
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  • WMI-9: Design and Simulation of Waveguide-Based Devices in 2D Dirac Materials
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  • WMG-7: Challenges and Opportunities of GaN-on-Si Technology for Wireless Applications in the FR3 (8–24GHz) Band
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  • WMD-1: RF Acoustic Wave Resonators, Getting Started
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  • WMK-6: Ga₂O₃ FETs for Future Power and Harsh Environment Electronics
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  • WMM-7: Balanced Single-Antenna RF Transceiver Architectures for Frequency-Agile Full-Duplex Wireless Communications
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  • WMF-6: On-Wafer 4-Port Measurements from 70kHz to 220GHz in a Single Sweep
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  • WMJ-6: Leveraging Radio Astronomy Techniques for Enhanced RF and Microwave Sensing
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  • WMN-7: Multilayered Wearable Ultrasound Technology
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  • WMO-7: Understanding the Nuances of Being Human: Implications for Radar-Based Human Motion Classification
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