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Technical Session Audience Rating IMS

Displaying 2101 - 2150 of 2742
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  • Tu2D-3: System-in-Package Doherty Power Amplifier Using Hybrid LDMOS/GaN Line-Up for 5G Macro Driver Applications
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  • Tu2E-3: Enhancing Digital Predistortion Performance Under Load Mismatch Using a VSWR Generative Neural Network Simulator
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  • Tu2F-2: High-Power Quasi-Vertical GaN Schottky Barrier Diode RF Rectifier Based on Impedance Compression Network for WPT Applications
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  • Tu3A-3: Numerical Testbench for a priori Uncertainty Estimation of Dielectric Spectroscopy in Organ-on-Chip Devices
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  • Tu3B-1: 150GHz-Band Compact Phased-Array AiP Module for XR Applications toward 6G
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  • Tu3B-3: Ka-Band 4×4 Butler Matrix-Based Switched Beamformer Supporting Uniform EIRP Beams in Single-/Dual-Port Excitations
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  • Tu3D-2: A 4-420-GHz Distributed Amplifier MMIC in a 20-nm InGaAs-on-Si HEMT Technology With 11±2-dB Gain
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  • Tu3E-4: A GaAs HBT Doherty Power Amplifier with 31dBm Linear Output Power and 43% Efficiency by Using Dynamic IM3 Cancellation
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  • Tu3F-6: A Hybrid CMOS-Polyimide Adaptive Force Radiometric Array with 3-5 GHz Wireless Connectivity
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  • Tu4A-5: Moving Person Vital Sign Detection Using Four-Channel Phase- and Quadrature Self-Injection-Locked Radar and MPCA Method for Dynamic Clutter Immunity
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  • Tu4C-2: Planar Low-Loss Ultra-Wideband Coaxial-Less Balun and 4-Way Combiner for High-Power Applications
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  • Tu4D-1: Ultrawideband Vector Modulators for Next-Gen Wireless Networks in the 200–480GHz Range
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  • Tu4E-4: Phase Derivative Approach for Nonlinear Power Amplifier Forward Modeling with 2-D LUTs
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  • Tu4F-4: Polarimetric Spectrometer Receivers for Remote Sensing of Ionospheric Currents
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  • We1B-5: A C-Band High-Precision Amplitude-Phase Control Multi-Functional Chip with Symmetric Polyphase Filter and X-Type Attenuator
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  • We1D-2: Electromagnetic Emission Simulation of Radio-Frequency Circuits Using Direct Domain Decomposition Solver
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  • We1E-4: Coupling Matrix Reconfiguration Aided with a Start System Based on Simultaneous Diagonalization
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  • We1G-4: Monolithic Implementation and Performance Comparison of Three Single Balanced Architectures for D-Band HEMT Mixers
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  • We1H-5: An X-Band Low-Voltage GaN HEMT Stacked Power Amplifier Operating in Class-J with Active Second Harmonic Injection
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  • We2B-3: A 28GHz Compact Phased-Array Beamformer with 21.3dBm PSAT and 5.2dB Noise Figure in 40nm CMOS
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  • We2C-4: Extraction of Coupling Matrix for Bandpass Filters Based on Magnitude of S-Parameters
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  • We2D-6: THz Diffraction Radiation Analysis of Finite Graphene Strip Grating with Grounded Dielectric Substrate Excited by Electron Beam
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  • We2G-3: A D-Band ×15 Frequency Multiplier Chain in 45nm SiGe BiCMOS for Board-Level Packaged Array Applications
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  • We2H-2: A High-Efficiency GaAs HBT Power Amplifier for 6G FR3 Applications
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  • We3B-2: A 60-GHz RadCom Down-Converter in 22-nm CMOS FDSOI for Short-Range Hand Gesture Sensing and High-Data-Rate Proximity Communication
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  • We3B-6: A 71–76GHz Four-Element Phased-Array Receiver with Compact Footprint in 65-nm CMOS
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  • We3D-3: Frequency-Query Enhanced Electromagnetic Surrogate Modeling with Edge Anti-Aliasing Pixelation for Bandpass Filter Inverse Design
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  • We3G-3: A 60GHz Super Harmonic Injection Locked Oscillator with Quadrature Outputs
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  • We3H-4: A Sub-6GHz Ultra-Compact 69.8% Drain Efficiency Harmonic Control Doherty Power Amplifier in GaN Technology
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  • IF1-5: Metasurface Design for RCS Reduction Applications
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  • IF1-12: Detection Algorithm for Waveguide Connection and Probe Contact States Based on Machine Learning in Frequency up to 1.1THz
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  • IF1-18: A High-Efficiency Outphasing Power Amplifier Utilizing a Synthesized Direct-Matching Technique Based on Two-Section Branch-Line Coupler Output Combiner
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  • IF1-22: Ultra-Wideband 6-Bit Passive Phase Shifter with Open-Circuit Microstrip Pseudo-π Network and Low RMS Phase Error
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  • IF1-28: High Power-Added-Efficiency AlGaN/GaN E-Mode HEMTs for Low-Supply-Voltage RF Terminal Applications
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  • IF1-33: High-Efficiency Low-Complexity ASK Transmitter Using an Inverse Class-F Power Amplifier with a Nonuniform Transmission-Line-Based Load Transformation Network
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  • IF1-38: Fast-Switchable 3.6GHz GaN Doherty Power Amplifier for Energy-Efficient Non-Continuous Transmission of 256-QAM Signals
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  • IF1-44: A 30-mW D-Band High-Sensitivity Self-Injection-Locked Radar Sensor with Integrated SIW Antenna in 70-nm GaAs pHEMT Technology
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  • Th1A-2: Empty-SIW (eSIW) Based Beamformer System on Glass Package for G-Band Phased Array Applications
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  • Th1B-2: A Low-Loss, Wideband, 0–110GHz SPDT Using PCM RF Switches with Integrated CMOS Drivers
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  • Th1C-2: A Compact Millimeter-Wave Phase Shifter Integrated Variable Coupler in SIW Technology for Beam-Forming Applications
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  • Th1D-4: Dielectric Measurements of Conventional and 3-D Printed Substrate Materials from 50GHz to 1.5THz Using Free-Space and TDS Methods
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  • Th1F-4: A 16-Way 115–129GHz High Power Amplifier with 20.9dBm PSAT and 17.6dBm P1dB in 40nm Bulk CMOS
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  • Th1G-4: A >22GS/s, 44dB SNDR Wideband 4×4 Time-Interleaved Sampling Front-End with Bulk-Driven Mismatch Calibration in 22nm FDSOI
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  • Th2A-2: 3DGS 3D Heterogeneous Integrated RF Multi-Layers Glass-Interposer System-in-Package
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  • Th2B-3: Frequency and Bandwidth Design of Millimeter Wave Thin-Film Lithium Niobate Acoustic Filters
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  • Th2C-3: Novel Reflective-Type Bandpass Filter with Simultaneously Integrated Tunable Attenuation and Phase Shifting Functions
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  • Th2D-3: A Wideband Digital Compensation Model Based on Fast Bandwidth Sensing for Zero-IF Receiver
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  • Th2F-3: 300GHz 8×1 Active Phased Array MMIC with On-Chip Power Amplifiers, Vector Modulators, and Antennas
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  • Th2G-4: A 71–86-GHz Receiver with 5-GHz IF Signal Bandwidth for E-Band Broadband Communication in 65-nm CMOS
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  • Th3A-2: A Reconfigurable Dielectric-Loaded Millimeter-Wave Waveguide Bandpass Filter Based on Customized 3D-Printing Vanadium Dioxide Filament
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    0 Voters
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