Microwave Week 2020 Dashboard

Technical Session Audience Rating IMS

Displaying 2101 - 2150 of 2759
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  • We3H-1: KEYNOTE: Future State of GaN MMIC Technology for Defense Electronics
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  • IF1-2: GaN-Based Power Amplification Unit for the Europa Clipper Mission
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  • IF1-7: A TSPC mm-Wave Frequency Divider with up to 50GHz Input Frequency in 12nm FinFET Bulk CMOS
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  • IF1-15: A 230-GHz 3.5-dBm Phase-Shifter-Embedded Frequency Tripler with 360° Phase-Shifting Range in 40-nm CMOS
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  • IF1-20: A THz Attenuator Based on Voltage-Tunable Whispering Gallery Mode Resonator
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  • IF1-25: 2200W High-Efficiency Amplifier Module Covering 325MHz and 352MHz Applications
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  • IF1-31: Analysis of High-Efficiency Power Amplifiers Exploiting Input Harmonics and Nonlinear I-V Knee Characteristics
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  • IF1-35: An Effective Basis Function Generation Structure for Digital Pre-Distortion in Wideband Scenarios
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  • IF1-42: Heart Rate Variability Monitoring Using a Chord-Based Algorithms in Low-IF CW Radar Systems
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  • Th1A-1: A D-Band Tx FOWLP Module with Silicon-Based Resonator Antenna Array
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  • Th1A-3: Evaluation of Stacked Structure for 160GHz End-Fire Type Compact Antenna-in-Package Considering Thermal Design
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  • Th1B-4: Wideband Sub-THz Evanescent-Mode Waveguide Switch Using Reconfigurable Photogenerated Solid-State Plasma Elements
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  • Th1D-1: An EVA-Based High-Power and Absorptive Frequency-Selective Plasma Limiter
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  • Th1F-1: A High-Efficiency E-Band GaN Doherty Power Amplifier with 35.7dBm Output Power and 22.8%/16.8% Peak/6-dB Back-Off Efficiency
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  • Th1G-2: DC-to-89-GHz AMUX-based IQ Modulator in 250-nm InP HBT Technology for Multiplexing-DAC Subsystem
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  • Th1G-6: A Bi-Directional 5-Bit 131.5–150.5GHz Digital-Programmable Phase Shifter with 2.1°/0.3dB RMS Phase/Gain Errors in 40nm CMOS
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  • Th2A-5: Thin Film Transmission Lines on Low-k Polymer Films for Sub-THz Applications
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  • Th2B-5: A 36GHz Trilayer AlN/ScAlN/AlN Periodically Poled FBAR
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  • Th2D-1: Traceable S-Parameter Measurements up to 165 GHz using 0.8 mm Coaxial Standards
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  • Th2F-1: KEYNOTE: InP HBT Technologies for Integrated Circuit Development of Efficient mm-Wave and THz Power Amplifiers and Sources
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  • Th2G-1: A Ku-Band CMOS LNA with Symmetric Polarity-Selective Transformer for Efficient 180° Phase Shifting
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  • Th2G-6: First Demonstration of MMIC Low-Noise Amplifiers Operating at Ka-Band Realized with Enhancement-Mode Gallium Nitride HEMTs
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  • Th3A-3: Aerosol Jet Fully 3D Printed RF Attenuator Using Resistive Ink
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  • Th3B-2: On-Wafer Characterization of K-Band to V-Band GaN IMPATT Diodes
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  • Th3B-5: Small- and Large-Signal Characterization of RF Substrates Down to Cryogenic Temperatures
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  • Th3D-2: Integrated Solution for Linear and Non-Linear Single-Touchdown On-Wafer Characterization of D-Band Mixers
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  • Th3F-2: A D-Band InP Power Amplifier Featuring Fully AI-Generated Passive Networks
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  • Th3G-2: An 8–12.2GHz CMOS Low-Noise Amplifier with Partially Tail-Coupled Transformer and Large-Transistor Achieving 1.8dB Average NF
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  • WSE-1: Integrating FR2 OAI and Hybrid RIS: Enhanced Network Management Implementing FR2 OAI, ORAN, and RIS
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  • WSM-1: VLC/LiFi for NextG Wireless
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  • WSH-8: Glass Core Technology as a Building Block for Advanced Packaging Architectures
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  • WSA-1: Reference Oscillator Architectures and Design Considerations
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  • WSO-1: Superconducting Qubits: Wiring up Quantum Entanglement
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  • WSJ-6: How to Ensure Flexible and Efficient Use of Spectrum, from Advanced 5G Doherty Power Amplifiers to Digitally Assisted Wideband PA for 6G BTS
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  • WSF-9: Phased Array in mm-Wave and Sub-THz for Communication and Sensing
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  • WSK-3: Photonics-Based THz Generation for THz Communication Testing and System-Level Demonstrations
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  • WSP-5: Next Generation mm-Wave Technology: Beamforming with Joint Phase and Time Array
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  • WMI-2: Classical Electromagnetic Considerations in Designing Superconducting Qubit Devices
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  • WME-4: Design Aspects of Waveguide Polarizers and Orthomode Transducers
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  • WML-1: Fundamentals of Method of Moments
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  • WMD-6: Design and Fabrication of Phononic Integrated Circuits in Scandium Aluminum Nitride
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  • WMK-9: Thin-Film Diamond Integration for Advanced Thermal Management in Electronics
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  • WMM-8: Gallium Nitride: A Promising Technology for Fully Integrated Transceiver Front-End
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  • WMA-1: Advanced Techniques for 5G PA and Front-End Modules Packaging and Thermal Management
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  • WMH-4: Monolithic 3D Integrated RF Components Enabled by Additive Manufacturing Technologies
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  • WMC-3: Development of Superconducting Receiver Technologies Supporting Radio Astronomy
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  • WMO-11: Radar and Wi-Fi Sensing with Foundational Models: Enabling Passive Human Sensing
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  • WMR-4: Signal-Flow-Based Analysis and Design of LMBA
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  • WMQ-5: Characterization Techniques Tailored to GaN Devices for Communication Applications
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  • Tu1A-4: A 94GHz 8Tx-16Rx Direct Center-Fed Active Array TD-MIMO FMCW Radar in 28-nm CMOS
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