Microwave Week 2020 Dashboard

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Technical Session Audience Rating IMS

Displaying 1901 - 1950 of 2742
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  • Tu3A-2: Advanced Immunoassay Detection Using Microwave Whispering Gallery Mode Resonators
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  • Tu3B-1: 150GHz-Band Compact Phased-Array AiP Module for XR Applications toward 6G
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  • Tu3B-3: Ka-Band 4×4 Butler Matrix-Based Switched Beamformer Supporting Uniform EIRP Beams in Single-/Dual-Port Excitations
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  • Tu3D-1: A 4–240-GHz InP Variable-Gain Amplifier Using an Analog-Controlled Input Attenuation Network
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  • Tu3E-4: A GaAs HBT Doherty Power Amplifier with 31dBm Linear Output Power and 43% Efficiency by Using Dynamic IM3 Cancellation
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  • Tu3F-6: A Hybrid CMOS-Polyimide Adaptive Force Radiometric Array with 3-5 GHz Wireless Connectivity
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  • Tu4A-5: Moving Person Vital Sign Detection Using Four-Channel Phase- and Quadrature Self-Injection-Locked Radar and MPCA Method for Dynamic Clutter Immunity
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  • Tu4B-6: Low Power Consumption and Beam-Sustainable Reconfigurable Intelligent Surface for Fixed Wireless Communication at Millimeter-Wave 5G Band
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  • Tu4D-1: Ultrawideband Vector Modulators for Next-Gen Wireless Networks in the 200–480GHz Range
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  • Tu4E-3: Reference Phase Adjustment Technique with Cross-Polarization Cancellation for Enhanced Digital Predistortion in Mobile Dual-Polarized Arrays
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  • Tu4F-4: Polarimetric Spectrometer Receivers for Remote Sensing of Ionospheric Currents
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  • We1B-5: A C-Band High-Precision Amplitude-Phase Control Multi-Functional Chip with Symmetric Polyphase Filter and X-Type Attenuator
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  • We1D-1: KEYNOTE: AI Accelerating Scientific Understanding: Neural Operators for Learning on Function Spaces
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  • We1E-3: Advances on Size Reduction and Spurious Suppression in Rectangular Waveguide Filters
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  • We1G-4: Monolithic Implementation and Performance Comparison of Three Single Balanced Architectures for D-Band HEMT Mixers
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  • We1H-4: An X-Band 35-dBm Compact Continuous-Mode Class-J Power Amplifier in 0.25-µm GaN Process
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  • We2B-3: A 28GHz Compact Phased-Array Beamformer with 21.3dBm PSAT and 5.2dB Noise Figure in 40nm CMOS
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  • We2C-3: Compact 7–23-GHz Bandpass Filter with High Selectivity and Wide Stopband Using Hybrid Microstrip/SIDGS Scheme for 6G Application
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  • We2D-6: THz Diffraction Radiation Analysis of Finite Graphene Strip Grating with Grounded Dielectric Substrate Excited by Electron Beam
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  • We2G-2: A 110–130-GHz Frequency Quadrupler with 12.5% Drain Efficiency in 22-nm FD-SOI CMOS
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  • We2H-2: A High-Efficiency GaAs HBT Power Amplifier for 6G FR3 Applications
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  • We3B-2: A 60-GHz RadCom Down-Converter in 22-nm CMOS FDSOI for Short-Range Hand Gesture Sensing and High-Data-Rate Proximity Communication
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  • We3B-6: A 71–76GHz Four-Element Phased-Array Receiver with Compact Footprint in 65-nm CMOS
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  • We3C-5: An Ultra-Compact D-Band SIW Filter with Multifunction Transitions to Coplanar Input/Output
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  • We3G-1: A 7.8–11.9GHz Quad-Mode Class-F2,3 VCO with Multi-Stage Cross-Shared Common-Mode Path Achieving -131.9dBc/Hz 1-MHz Phase Noise and 201.8dBc/Hz FoMT
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  • We3H-2: A Broadband Doherty-like Load-Modulated Balanced Amplifier with an Optimized Impedance Transformation Ratio in InGaP/GaAs HBT Process for Handset applications
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  • IF1-2: GaN-Based Power Amplification Unit for the Europa Clipper Mission
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  • IF1-8: A 28GHz Dual-Mode Power Amplifier for Enhanced Load Resiliency or Back-Off Efficiency Enhancement in 22nm FDSOI Process
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  • IF1-16: RPRS: Real-Time Privacy mm-Wave Radar Sensing System
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  • IF1-20: A THz Attenuator Based on Voltage-Tunable Whispering Gallery Mode Resonator
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  • IF1-26: An Ultra-Low-Cost Early Warning Sensor for Pedestrians
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  • IF1-31: Analysis of High-Efficiency Power Amplifiers Exploiting Input Harmonics and Nonlinear I-V Knee Characteristics
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  • IF1-36: Multi-Functional Modulated Surface Based on M-Type Ferrite for mmWave Application
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  • IF1-42: Heart Rate Variability Monitoring Using a Chord-Based Algorithms in Low-IF CW Radar Systems
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  • Th1A-1: A D-Band Tx FOWLP Module with Silicon-Based Resonator Antenna Array
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  • Th1A-3: Evaluation of Stacked Structure for 160GHz End-Fire Type Compact Antenna-in-Package Considering Thermal Design
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  • Th1B-4: Wideband Sub-THz Evanescent-Mode Waveguide Switch Using Reconfigurable Photogenerated Solid-State Plasma Elements
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  • Th1D-2: A Microwave Plasma Jet Array Based on SIW-Enabled Evanescent-Mode Cavity Resonator Technology
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  • Th1F-1: A High-Efficiency E-Band GaN Doherty Power Amplifier with 35.7dBm Output Power and 22.8%/16.8% Peak/6-dB Back-Off Efficiency
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  • Th1G-2: DC-to-89-GHz AMUX-based IQ Modulator in 250-nm InP HBT Technology for Multiplexing-DAC Subsystem
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  • Th1G-6: A Bi-Directional 5-Bit 131.5–150.5GHz Digital-Programmable Phase Shifter with 2.1°/0.3dB RMS Phase/Gain Errors in 40nm CMOS
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  • Th2A-5: Thin Film Transmission Lines on Low-k Polymer Films for Sub-THz Applications
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  • Th2B-5: A 36GHz Trilayer AlN/ScAlN/AlN Periodically Poled FBAR
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  • Th2D-1: Traceable S-Parameter Measurements up to 165 GHz using 0.8 mm Coaxial Standards
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  • Th2F-2: 300-GHz-Band InP HBT Power Amplifier Module Enabling 280-Gbps 0-dBm Signal Generation with Digital Predistortion
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  • Th2G-1: A Ku-Band CMOS LNA with Symmetric Polarity-Selective Transformer for Efficient 180° Phase Shifting
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  • Th2G-6: First Demonstration of MMIC Low-Noise Amplifiers Operating at Ka-Band Realized with Enhancement-Mode Gallium Nitride HEMTs
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  • Th3A-4: An Agile Additively Manufactured 5G/mm-Wave RF Front-End with Multi-Layer Conformality and Printed RF VIAs for Ultra-Wideband and Miniaturized Systems
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  • Th3B-3: AlN/GaN MIS-HEMT With GeN Gate Dielectric for mm-Wave Applications
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  • Th3C-1: Unilateral Single-Pole Multi-Throw Filtering Switch Using Spatiotemporally Modulated Resonator Arrays
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