Microwave Week 2020 Dashboard

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Technical Session Audience Rating IMS

Displaying 1901 - 1950 of 2759
Start Date
  • Tu2C-4: High Sensitivity W-Band LEKID-Based On-Chip Polarimeter
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  • Tu2D-4: 10 Watt CW Power Handling SPDT RF Switch Using E-Mode p-GaN Dual-Gate HEMT Technology
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  • Tu2E-4: Recurrent Neural Network Modeling of Radio Frequency Amplifiers for System-Level Simulation and Design
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  • Tu2F-4: 27-GHz Silicon-Integrated Rectenna Based on Novel Multilayer Substrate
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  • Tu3A-4: A 0.3dB-NF SiGe LNA Array for 10.5T Multi-Channel MRI Receivers
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  • Tu3B-1: 150GHz-Band Compact Phased-Array AiP Module for XR Applications toward 6G
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  • Tu3B-4: Body Proximity Detection Based on Reflections of Multi-Antenna Uplink Transmission from a 5G Mobile Handset
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  • Tu3D-4: 300-GHz-Band Single-Balanced Resistive Mixer Module in 60-nm InP HEMT Technology with LO Leakage Suppressing Function
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  • Tu3E-5: A High-Linearity Quasi-Darlington Amplifier with Sub-Degree AM-PM for WLAN Applications
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  • Tu4A-2: Asynchronous Space-Time Coding Direct Antenna Modulation-Enabled Automated Beam-Scanning Multi-Target Vital Sign Radar Sensing
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  • Tu4B-3: Chirp Sequence-Based Beamwidth Control in a Reconfigurable Intelligent Surface
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  • Tu4C-3: Continuous Current Mode Class-F Power Amplifier: A Solution for Bandwidth Extension in Low Breakdown Voltage Applications
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  • Tu4D-2: Sub-THz Phase Shifter Using a Photoconductive Solid-State Plasma Evanescent-Mode Waveguide Switched Stub
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  • Tu4E-5: Neural Network Based Nonlinear Forward Model Identification for Digital MIMO Arrays Under Load Modulation
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  • We1B-1: KEYNOTE: A MIMO Perspective of Phased Arrays and its Applications
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  • We1B-6: A 10-GHz Localized-LO-Phase-Shifting Phased-Array Transmitter
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  • We1D-4: Fusing Leontovich Boundary Conditions and Scalar 2D FEM to Compute Lid and Lateral Wall Losses in H-plane Waveguide Devices
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  • We1E-5: Band-Pass Filter Based on Stacked Metal Plates in V-Band Waveguide Technology
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  • We1G-5: A DC-to-170GHz Direct-Coupled Mixer Achieving 47dB LO-RF Isolation in 250nm InP DHBT Technology
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  • We2B-1: A 22–30GHz Ultra Low RMS Phase Error SiGe HBT BiCMOS Active Vector Modulator Phase Shifter with a Tunable Two-Section Lumped Element Differential Quadrature Hybrid
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  • We2B-4: A 16.2-to-22.2-GHz Phased-Array Receiver with -60-to-85°C Simultaneously Gain and NF Temperature Compensation Supporting 24Gb/s 64QAM Modulation
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  • We2D-2: Green’s Function Analysis of Spatially Discrete Traveling-Wave Modulated (Parametric) Loop Networks
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  • We2E-2: Novel Radial Combiners with Integrated Low Pass Filtering Function
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  • We2G-3: A D-Band ×15 Frequency Multiplier Chain in 45nm SiGe BiCMOS for Board-Level Packaged Array Applications
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  • We2H-2: A High-Efficiency GaAs HBT Power Amplifier for 6G FR3 Applications
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  • We3B-3: A 71-to-76GHz 8-Element Switchless Isolated Spectrum Phased-Array Transceiver with Direct-Modulation and Reflectionless Sliding-IF
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  • We3C-1: A Highly Linear 4W Differential SOI-CMOS RF Switch
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  • We3D-1: KEYNOTE: Computational Electromagnetics and a Facilitator of Microwave Creativity and Industrial Innovation
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  • We3G-2: A 19.3-to-27.3GHz Area-Reuse Double Dual-Core Complementary Class-F-1 VCO with Non-Interfering Multiple Resonances Achieving 203.3dBc/Hz FoMT and 213.3dBc/Hz FoMTA
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  • We3H-3: Wideband 3-W GaAs MMIC Doherty PA with Stacked Devices and Load Variation Tolerance Under 2.5:1 VSWR
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  • IF1-4: An Area-Efficient Reconfigurable Compact Multi-Band Directional Coupler in RF SOI CMOS Technology
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  • IF1-10: A Full V-Band High-Output Power Frequency Doubler with High Fourth Harmonic Suppression in a InGaAs mHEMT Technology
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  • IF1-17: Material Characterization of Graphene Oxide and Reduced Graphene Oxide Using Resonance Methods
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  • IF1-21: Modified GaN Based Sequential Load-Modulated-Balanced-Amplifier Avoiding Schottky-Gate Effects & Increase Linearisability
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  • IF1-28: High Power-Added-Efficiency AlGaN/GaN E-Mode HEMTs for Low-Supply-Voltage RF Terminal Applications
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  • IF1-32: S-Parameter-Based Simulation Technique and Crosstalk Suppression for Large-Scale Superconducting Quantum-Computing Chip Design
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  • IF1-37: Dual-Band Surface Acoustic Wave Filter Based on Parallel Connected Resonators
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  • IF1-43: A Compact Brick-Type 40GHz-Band DBF Transmit Antenna Module Using Direct Digital RF Technology
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  • Th1A-2: Empty-SIW (eSIW) Based Beamformer System on Glass Package for G-Band Phased Array Applications
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  • Th1A-5: An Antipodal SIW-Fed Vivaldi Antenna at D-Band in LTCC for Flip-Chip RFIC Integration
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  • Th1C-1: Innovative Hybrid Stripline Guiding Structure for Wideband Crossover Implementation
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  • Th1D-3: Temperature and Humidity Effects on Electromagnetic Waves Utilizing 140GHz Radar Measurements
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  • Th1F-3: A Compact Wideband Low-Loss On-Chip Power Combiner for High-Efficiency GaN mm-Wave Power Amplifiers
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  • Th1G-3: A 132GHz SiGe BiCMOS Sampler for Linear Front-Ends
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  • Th2A-1: Novel Low-Loss Shielded Interconnects for D-band/sub-THz Applications Using Microscale Metal Printing Technologies
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  • Th2B-2: Low-Loss Longitudinal Leaky SAW Filter with 1350MHz Bandwidth on LiNbO₃/SiO₂/SiC Platform for Wi-Fi 7
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  • Th2C-1: A Reconfigurable Filtering Circulator/Isolator with Continuously Controllable Center Frequency and Insertion Phase
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  • Th2D-3: A Wideband Digital Compensation Model Based on Fast Bandwidth Sensing for Zero-IF Receiver
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  • Th2F-3: 300GHz 8×1 Active Phased Array MMIC with On-Chip Power Amplifiers, Vector Modulators, and Antennas
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  • Th2G-3: An 86–90GHz Adaptive Gain CMOS LNA with Linearity Enhancement & -6dBm Blocker Tolerance
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