Microwave Week 2020 Dashboard

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WMK-6: Ga₂O₃ FETs for Future Power and Harsh Environment Electronics
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WMM-6: Adaptive RF Front-Ends as a Key Enabler of Modern Communication Systems
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WMF-5: Broadband Differential On-Wafer Measurements: Challenges in De-Embedding, Drive Control and Related Aspects
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WMJ-5: 3D-Printed RF Devices and Antennas for Sensing
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WMN-5: Realization of Passive Microwave Components Exploiting Available 3D Flexibility
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WMO-5: Microwave Biomedical Radar for Clinical Applications
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RFB1-5: End to End RF Simulation
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WMQ-1: Advanced Measurement Techniques and Comprehensive Analysis of Trapping and Thermal Effects in GaN-Based HEMTs
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Tu1A-2: A D-Band 1Tx 4Rx Mid-Range Automotive CMOS FMCW Radar
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Tu1B-2: A V-Band OOK Transmitter with 14.5Gbps Data Rate and 11.1% DC-to-RF Efficiency in 65nm CMOS
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Tu1C-2: Ultra-Low Phase Noise Frequency Synthesis Using Electro-Optic Detector-Based Comb-Microwave Synchronization
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Tu1D-3: A 90W High-Efficiency Four-Way Doherty Power Amplifier with 37.8% Fractional Bandwidth Over a 15dB Power Back-Off Range
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Tu1E-5: A Demonstration of Multi-Floating Superconducting Qubits on a 3D Flip-Chip Platform with TLS Loss Mitigation via Apertures
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Tu1F-5: Overcoming Efficiency Degradation in Wireless Power Transfer Systems: A Supply Voltage Modulation Method Empowered by 5.64-GHz 256-Element Antenna Array Receiving 10.6-Watt
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Tu2B-2: 60 Mbps Time-Domain Video Transfer Using Body Communication
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Tu2C-4: High Sensitivity W-Band LEKID-Based On-Chip Polarimeter
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Tu2D-3: System-in-Package Doherty Power Amplifier Using Hybrid LDMOS/GaN Line-Up for 5G Macro Driver Applications
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Tu2E-2: DeltaDPD: Exploiting Dynamic Temporal Sparsity in Recurrent Neural Networks for Energy-Efficient Wideband Digital Predistortion
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Tu2F-2: High-Power Quasi-Vertical GaN Schottky Barrier Diode RF Rectifier Based on Impedance Compression Network for WPT Applications
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Tu3A-2: Advanced Immunoassay Detection Using Microwave Whispering Gallery Mode Resonators
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Tu3B-1: 150GHz-Band Compact Phased-Array AiP Module for XR Applications toward 6G
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Tu3B-3: Ka-Band 4×4 Butler Matrix-Based Switched Beamformer Supporting Uniform EIRP Beams in Single-/Dual-Port Excitations
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Tu3D-1: A 4–240-GHz InP Variable-Gain Amplifier Using an Analog-Controlled Input Attenuation Network
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Tu3E-4: A GaAs HBT Doherty Power Amplifier with 31dBm Linear Output Power and 43% Efficiency by Using Dynamic IM3 Cancellation
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Tu3F-6: A Hybrid CMOS-Polyimide Adaptive Force Radiometric Array with 3-5 GHz Wireless Connectivity
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Tu4A-5: Moving Person Vital Sign Detection Using Four-Channel Phase- and Quadrature Self-Injection-Locked Radar and MPCA Method for Dynamic Clutter Immunity
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Tu4B-6: Low Power Consumption and Beam-Sustainable Reconfigurable Intelligent Surface for Fixed Wireless Communication at Millimeter-Wave 5G Band
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Tu4D-1: Ultrawideband Vector Modulators for Next-Gen Wireless Networks in the 200–480GHz Range
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Tu4E-3: Reference Phase Adjustment Technique with Cross-Polarization Cancellation for Enhanced Digital Predistortion in Mobile Dual-Polarized Arrays
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Tu4F-4: Polarimetric Spectrometer Receivers for Remote Sensing of Ionospheric Currents
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We1B-5: A C-Band High-Precision Amplitude-Phase Control Multi-Functional Chip with Symmetric Polyphase Filter and X-Type Attenuator
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We1C-4: Miniaturized Multilayer and Self-Packaged Triple-Mode Bandpass Filter with High Selectivity and Wide Stopband
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We1E-3: Advances on Size Reduction and Spurious Suppression in Rectangular Waveguide Filters
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We1G-3: A 14.5Gb/s, 2.75pJ/bit, Direct-Digital, Star-QAM Modulator and Co-Designed Frequency Multiplier Operating at 140GHz
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We1H-4: An X-Band 35-dBm Compact Continuous-Mode Class-J Power Amplifier in 0.25-µm GaN Process
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We2B-3: A 28GHz Compact Phased-Array Beamformer with 21.3dBm PSAT and 5.2dB Noise Figure in 40nm CMOS
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We2C-3: Compact 7–23-GHz Bandpass Filter with High Selectivity and Wide Stopband Using Hybrid Microstrip/SIDGS Scheme for 6G Application
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We2D-5: Mixed-Mode Distributed Physical-Based Model on OSFP Connector for Fast PAM-4 Channel Analysis and Pathfinding up to 212.5Gbps
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We2G-1: A 13.7–41GHz Ultra-Wideband Frequency Doubler with Cross-Coupled Push-Push Structure Achieving 10.6% Peak Efficiency and 7-dBm Psat
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We2H-2: A High-Efficiency GaAs HBT Power Amplifier for 6G FR3 Applications
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We3B-2: A 60-GHz RadCom Down-Converter in 22-nm CMOS FDSOI for Short-Range Hand Gesture Sensing and High-Data-Rate Proximity Communication
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We3B-6: A 71–76GHz Four-Element Phased-Array Receiver with Compact Footprint in 65-nm CMOS
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We3C-4: A 10-17 GHz Continuously Tunable CMOS Filter with FlexibleBandwidth Control Based on Mode-Switching Inductors
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We3D-6: Analysis of a Self-Injected Super-Regenerative Oscillator for Motion Sensing
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We3H-1: KEYNOTE: Future State of GaN MMIC Technology for Defense Electronics
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IF1-2: GaN-Based Power Amplification Unit for the Europa Clipper Mission
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IF1-7: A TSPC mm-Wave Frequency Divider with up to 50GHz Input Frequency in 12nm FinFET Bulk CMOS
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IF1-15: A 230-GHz 3.5-dBm Phase-Shifter-Embedded Frequency Tripler with 360° Phase-Shifting Range in 40-nm CMOS
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IF1-20: A THz Attenuator Based on Voltage-Tunable Whispering Gallery Mode Resonator
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IF1-24: Parallel Differential-Line Fed Planar Aperture Antenna-in-Package with Signal Lines Isolated from IC in 300-GHz Band
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Microwave Week 2020 Dashboard

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