Microwave Week 2020 Dashboard

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Displaying 1851 - 1900 of 2759

IF1-30: A Coupler-Feedback Technique for Power Amplifier Gain Enhancement
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IF1-35: An Effective Basis Function Generation Structure for Digital Pre-Distortion in Wideband Scenarios
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IF1-41: Enhancing Long-Range Battery-Free Communication: A Passive Lens-Enabled Broadbeam Harmonic mmID for Emerging IoT Systems
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Th1A-1: A D-Band Tx FOWLP Module with Silicon-Based Resonator Antenna Array
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Th1A-3: Evaluation of Stacked Structure for 160GHz End-Fire Type Compact Antenna-in-Package Considering Thermal Design
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Th1B-4: Wideband Sub-THz Evanescent-Mode Waveguide Switch Using Reconfigurable Photogenerated Solid-State Plasma Elements
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Th1D-1: An EVA-Based High-Power and Absorptive Frequency-Selective Plasma Limiter
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Th1F-1: A High-Efficiency E-Band GaN Doherty Power Amplifier with 35.7dBm Output Power and 22.8%/16.8% Peak/6-dB Back-Off Efficiency
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Th1G-2: DC-to-89-GHz AMUX-based IQ Modulator in 250-nm InP HBT Technology for Multiplexing-DAC Subsystem
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Th1G-6: A Bi-Directional 5-Bit 131.5–150.5GHz Digital-Programmable Phase Shifter with 2.1°/0.3dB RMS Phase/Gain Errors in 40nm CMOS
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Th2A-5: Thin Film Transmission Lines on Low-k Polymer Films for Sub-THz Applications
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Th2B-5: A 36GHz Trilayer AlN/ScAlN/AlN Periodically Poled FBAR
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Th2D-1: Traceable S-Parameter Measurements up to 165 GHz using 0.8 mm Coaxial Standards
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Th2F-1: KEYNOTE: InP HBT Technologies for Integrated Circuit Development of Efficient mm-Wave and THz Power Amplifiers and Sources
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Th2G-1: A Ku-Band CMOS LNA with Symmetric Polarity-Selective Transformer for Efficient 180° Phase Shifting
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Th2G-6: First Demonstration of MMIC Low-Noise Amplifiers Operating at Ka-Band Realized with Enhancement-Mode Gallium Nitride HEMTs
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Th3A-3: Aerosol Jet Fully 3D Printed RF Attenuator Using Resistive Ink
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Th3B-2: On-Wafer Characterization of K-Band to V-Band GaN IMPATT Diodes
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Th3B-5: Small- and Large-Signal Characterization of RF Substrates Down to Cryogenic Temperatures
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Th3D-2: Integrated Solution for Linear and Non-Linear Single-Touchdown On-Wafer Characterization of D-Band Mixers
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Th3F-2: A D-Band InP Power Amplifier Featuring Fully AI-Generated Passive Networks
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Th3G-2: An 8–12.2GHz CMOS Low-Noise Amplifier with Partially Tail-Coupled Transformer and Large-Transistor Achieving 1.8dB Average NF
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WSE-1: Integrating FR2 OAI and Hybrid RIS: Enhanced Network Management Implementing FR2 OAI, ORAN, and RIS
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WSM-1: VLC/LiFi for NextG Wireless
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WSH-8: Glass Core Technology as a Building Block for Advanced Packaging Architectures
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WSA-1: Reference Oscillator Architectures and Design Considerations
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WSO-1: Superconducting Qubits: Wiring up Quantum Entanglement
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WSJ-5: Antenna-VSWR-Resilient Load-Modulated Balanced Amplifier (LMBA) for Massive MIMO Communications
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WSF-9: Phased Array in mm-Wave and Sub-THz for Communication and Sensing
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WSK-3: Photonics-Based THz Generation for THz Communication Testing and System-Level Demonstrations
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WSP-2: Fully Integrated, Time-Varying Non-Reciprocal Components for RF and mm-Wave Systems
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WMI-2: Classical Electromagnetic Considerations in Designing Superconducting Qubit Devices
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WME-3: Efficient Generation of Exact Filter Models for High-Power Analysis
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WMG-10: Reliability Challenges of GaN-on-Si RF Technologies
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WMD-5: Manipulating Surface Acoustic Wave Phonons in the Quantum Regime
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WMK-9: Thin-Film Diamond Integration for Advanced Thermal Management in Electronics
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WMM-8: Gallium Nitride: A Promising Technology for Fully Integrated Transceiver Front-End
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WMF-10: mm-Wave On-Wafer Measurements from a CMOS IC Designer’s Perspective
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WMH-3: Introduction to Physical Optics for Modeling Complex Microwave and Antenna Devices
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WMC-2: Superconducting Detectors for THz Space Astrophysics
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WMO-10: An AI Foundation Model for Contextual Interpretation of Radar Data
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WMR-3: Broadband High Efficiency S-LMBA Design
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WMQ-5: Characterization Techniques Tailored to GaN Devices for Communication Applications
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Tu1A-4: A 94GHz 8Tx-16Rx Direct Center-Fed Active Array TD-MIMO FMCW Radar in 28-nm CMOS
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Tu1B-3: A Receiver-Assisted Joint Linearization Scheme for U6G Uplink Coverage Enhancement
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Tu1C-4: A 22nm CMOS 15–25GHz Dual-Differential Driver for RF Silicon Photonic Front-End
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Tu1E-1: A Cryogenic Front-End Module Applied to Readout Two-Qubits with FDM Technology in Superconducting Quantum Computing System
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Tu1E-5: A Demonstration of Multi-Floating Superconducting Qubits on a 3D Flip-Chip Platform with TLS Loss Mitigation via Apertures
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Tu2A-2: High-Resolution 3D Radar Imaging with Silicon-Micromachined Sub-THz Frequency-Diverse Antennas
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Tu2B-4: Enhanced Channel Capacity Underwater Multi-Diver Communication with Dual-Resonant Magnetoquasistatic Coupling
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Microwave Week 2020 Dashboard

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