Microwave Week 2020 Dashboard

Technical Session Audience Rating IMS

Displaying 1851 - 1900 of 2745
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  • Tu2A-4: Joint 4D Radar and Communication System Enabled by Virtual Transceiver Matrix Architecture for Advanced Automotive Sensing and Connectivity
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  • Tu2B-5: Intelligent Smoke Detection: State Recognition and Monitoring of Heating Processes Using FMCW Radar and Data-Driven Algorithms
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  • Tu2C-5: 100-Gbps Fiber-Terahertz System in 330-GHz Band Using Stable Transmitter and Simple Photonics-Enabled Receiver
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  • Tu2E-1: An Embedded-Structured Convolutional Neural Network for Efficient RF Device Behavior Model Extraction
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  • Tu2E-6: AdaAFE-CIM: A Hardware Implementation of Subspace Tracking for Adaptive Radar Data Compression
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  • Tu2F-4: 27-GHz Silicon-Integrated Rectenna Based on Novel Multilayer Substrate
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  • Tu3A-6: Fano-Resonance-Based THz Metasurface for Psoriasis Skin Detection
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  • Tu3B-2: A 28GHz Beamformer Element Demonstration Using Monolithically Integrated GaN and Si Transistors in 300mm GaN-on-Si Technology
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  • Tu3C-1: Recollections of Al Katz
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  • Tu3E-1: Experimental Demonstration of E-Band Tunable Analog Predistortion
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  • Tu3F-3: Analysis and Design of a New Material Sensor Utilizing an Oscillator with a Self-Injection Loop
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  • Tu4A-3: Accurate Doppler Cardiogram Sensing with Frequency-Domain Digital Beamforming Technique Based on a K-Band Biomedical Radar
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  • Tu4B-4: Enhanced EIRP and Reconfigurable Polarization Multi-Feed Active Antenna Module for Millimeter-Wave Beamforming Phased Arrays
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  • Tu4C-4: A Highly-Efficient 4.3GBaud Push-Pull LDMOS Based Pre-Driver with 6V Signal-Swing for GaN HEMTs in 22nm FDSOI
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  • Tu4D-4: Comparison of Wideband Low-Power H-Band Frequency Doublers with and without a Driving Stage in 22nm FDSOI CMOS
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  • Tu4F-3: A Heterogeneous Transceiver in 0.1µm D-Mode GaAs and 65nm CMOS for SATCOM Phased Arrays
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  • We1B-3: A 5–7.1GHz 4-Channel CMOS Wi-Fi 7 Transceiver Front-End for Fiber-to-the-Room with Analog Beamforming and Digital Predistortion
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  • We1C-1: Multi-functional Ultrawideband BPFs with Reconfigurable Absorptive and Tunable Attenuation Characteristics
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  • We1E-1: Compact Ku-Band Diplexer with Additive Manufactured Multi-Material Dielectric Resonator Insets
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  • We1G-1: A Q-Band Ultra-Low-Jitter Subharmonically Injection-Locked Frequency Quadrupler with FTL and Switched-Capacitor Array
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  • We1G-3: A 14.5Gb/s, 2.75pJ/bit, Direct-Digital, Star-QAM Modulator and Co-Designed Frequency Multiplier Operating at 140GHz
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  • We1H-4: An X-Band 35-dBm Compact Continuous-Mode Class-J Power Amplifier in 0.25-µm GaN Process
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  • We2B-3: A 28GHz Compact Phased-Array Beamformer with 21.3dBm PSAT and 5.2dB Noise Figure in 40nm CMOS
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  • We2C-3: Compact 7–23-GHz Bandpass Filter with High Selectivity and Wide Stopband Using Hybrid Microstrip/SIDGS Scheme for 6G Application
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  • We2D-5: Mixed-Mode Distributed Physical-Based Model on OSFP Connector for Fast PAM-4 Channel Analysis and Pathfinding up to 212.5Gbps
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  • We2G-1: A 13.7–41GHz Ultra-Wideband Frequency Doubler with Cross-Coupled Push-Push Structure Achieving 10.6% Peak Efficiency and 7-dBm Psat
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  • We2H-2: A High-Efficiency GaAs HBT Power Amplifier for 6G FR3 Applications
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  • We3B-2: A 60-GHz RadCom Down-Converter in 22-nm CMOS FDSOI for Short-Range Hand Gesture Sensing and High-Data-Rate Proximity Communication
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  • We3B-6: A 71–76GHz Four-Element Phased-Array Receiver with Compact Footprint in 65-nm CMOS
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  • We3C-4: A 10-17 GHz Continuously Tunable CMOS Filter with FlexibleBandwidth Control Based on Mode-Switching Inductors
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  • We3D-6: Analysis of a Self-Injected Super-Regenerative Oscillator for Motion Sensing
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  • We3H-1: KEYNOTE: Future State of GaN MMIC Technology for Defense Electronics
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  • IF1-2: GaN-Based Power Amplification Unit for the Europa Clipper Mission
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  • IF1-7: A TSPC mm-Wave Frequency Divider with up to 50GHz Input Frequency in 12nm FinFET Bulk CMOS
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  • IF1-15: A 230-GHz 3.5-dBm Phase-Shifter-Embedded Frequency Tripler with 360° Phase-Shifting Range in 40-nm CMOS
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  • IF1-20: A THz Attenuator Based on Voltage-Tunable Whispering Gallery Mode Resonator
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  • IF1-24: Parallel Differential-Line Fed Planar Aperture Antenna-in-Package with Signal Lines Isolated from IC in 300-GHz Band
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  • IF1-30: A Coupler-Feedback Technique for Power Amplifier Gain Enhancement
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  • IF1-35: An Effective Basis Function Generation Structure for Digital Pre-Distortion in Wideband Scenarios
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  • IF1-41: Enhancing Long-Range Battery-Free Communication: A Passive Lens-Enabled Broadbeam Harmonic mmID for Emerging IoT Systems
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  • Th1A-1: A D-Band Tx FOWLP Module with Silicon-Based Resonator Antenna Array
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  • Th1A-3: Evaluation of Stacked Structure for 160GHz End-Fire Type Compact Antenna-in-Package Considering Thermal Design
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  • Th1B-4: Wideband Sub-THz Evanescent-Mode Waveguide Switch Using Reconfigurable Photogenerated Solid-State Plasma Elements
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  • Th1D-1: An EVA-Based High-Power and Absorptive Frequency-Selective Plasma Limiter
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  • Th1F-1: A High-Efficiency E-Band GaN Doherty Power Amplifier with 35.7dBm Output Power and 22.8%/16.8% Peak/6-dB Back-Off Efficiency
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  • Th1G-2: DC-to-89-GHz AMUX-based IQ Modulator in 250-nm InP HBT Technology for Multiplexing-DAC Subsystem
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  • Th1G-6: A Bi-Directional 5-Bit 131.5–150.5GHz Digital-Programmable Phase Shifter with 2.1°/0.3dB RMS Phase/Gain Errors in 40nm CMOS
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  • Th2A-5: Thin Film Transmission Lines on Low-k Polymer Films for Sub-THz Applications
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  • Th2B-5: A 36GHz Trilayer AlN/ScAlN/AlN Periodically Poled FBAR
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  • Th2D-1: Traceable S-Parameter Measurements up to 165 GHz using 0.8 mm Coaxial Standards
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