Microwave Week 2020 Dashboard

Technical Session Audience Rating IMS

Displaying 1751 - 1800 of 2759
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  • We2D-3: Equation-Based Solver for High-Performance SI CuMax Routing Within Pin Fields
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  • We2E-5: High-Power Handling, Amplitude and Phase Stable, Full Band WR-06 Rotary Joint Based on TE01 Mode
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  • We2G-5: A 220–280GHz InP Frequency Doubler with a Compact, Low-Loss Folded Marchand Balun
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  • We2H-4: A Compact Doubly Neutralized Ku Band Power Amplifier with 39% Peak PAE and 23 dBm Output Power in 22FDX+ EDMOS for 6G FR3
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  • We3B-5: A 71–76GHz Phased-Array Transmitter with Nested-Coupler-Based Phase Shifter in 65nm CMOS
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  • We3C-3: A DC-51.5 GHz Digital Step Attenuator with Sub-5 dB Insertion Loss and 3.1° RMS Phase Error
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  • We3D-3: Frequency-Query Enhanced Electromagnetic Surrogate Modeling with Edge Anti-Aliasing Pixelation for Bandpass Filter Inverse Design
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  • We3G-4: Low-Power and Low-Phase Noise 94-GHz and 107.2-GHz Differential Fundamental Oscillators in 70-nm GaAs pHEMT Technology
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  • We3H-5: A Ka-Band GaN Doherty Power Amplifier with High Efficiency Over a Fractional Bandwidth of 20.4%
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  • IF1-6: USB Type-C Receptacle Connector with Ceramic Insulator and Three-Layer Ground Plates
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  • IF1-12: Detection Algorithm for Waveguide Connection and Probe Contact States Based on Machine Learning in Frequency up to 1.1THz
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  • IF1-19: Accurate Large-Scale Motion Sensing With FMCW Radar Based on Range-Dependent DFT Technique
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  • IF1-23: A 28nm CMOS Almost All-Digital 0.5 to 4.0GHz Ultra-Wideband Ground Penetrating Radar for Lunar Surface Exploration
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  • IF1-28: High Power-Added-Efficiency AlGaN/GaN E-Mode HEMTs for Low-Supply-Voltage RF Terminal Applications
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  • IF1-34: A SiGe J-Band Gilbert Cell-Based Frequency Doubler and Power Amplifier Chain with 10dBm Output Power
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  • IF1-39: Predicting the Fidelity of Multiplexed Superconducting Qubit Readout with Multiphysics Numerical Methods
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  • IF1-45: Direction Finding for Software Defined Radios with Switched Uniform Circular Arrays
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  • Th1A-3: Evaluation of Stacked Structure for 160GHz End-Fire Type Compact Antenna-in-Package Considering Thermal Design
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  • Th1B-2: A Low-Loss, Wideband, 0–110GHz SPDT Using PCM RF Switches with Integrated CMOS Drivers
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  • Th1C-4: Twisted-Shaped Millimeter-Wave Hybrid Couplers in 150nm GaN Technology for 5G Applications
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  • Th1D-4: Dielectric Measurements of Conventional and 3-D Printed Substrate Materials from 50GHz to 1.5THz Using Free-Space and TDS Methods
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  • Th1G-1: Broadband and Power-Efficient Optoelectronic Transmitter Monolithically Integrated in a SiGe BiCMOS ePIC Technology
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  • Th1G-5: A 0.9pJ/Bit 56Gb/s High-Swing Tri-Mode Wireline Transmitter with 6-Bit DAC Controlled Tailless-CML Driver and Impedance Calibration Loop
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  • Th2A-3: High Performance Waveguide Launcher in Interposer Package Technology for 77/79GHz Automotive 4D Imaging Radar
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  • Th2B-3: Frequency and Bandwidth Design of Millimeter Wave Thin-Film Lithium Niobate Acoustic Filters
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  • Th2C-3: Novel Reflective-Type Bandpass Filter with Simultaneously Integrated Tunable Attenuation and Phase Shifting Functions
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  • Th2D-4: Cross-Spectrum Phase Noise Measurements of 10-15-Level Stability Photonic Microwave Oscillators
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  • Th2F-4: 208GHz InP Distributed Amplifier with Combining Loss Reduction Techniques
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  • Th2G-4: A 71–86-GHz Receiver with 5-GHz IF Signal Bandwidth for E-Band Broadband Communication in 65-nm CMOS
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  • Th3A-2: A Reconfigurable Dielectric-Loaded Millimeter-Wave Waveguide Bandpass Filter Based on Customized 3D-Printing Vanadium Dioxide Filament
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  • Th3B-1: Deep Level Effects and Hot-Electron Reliability in Scaled GaN HEMTs
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  • Th3B-4: Influence of Double-Deck T-Gate Structures on Cut-Off Frequency in Al0.3Ga0.7N/AlN/GaN HEMTs
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  • Th3C-5: An Electrical Balance Duplexer Architecture without Inherent Insertion Loss Limitation
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  • Th3D-5: Cryogenic Microwave Probe Technology with High Thermal Insulation
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  • Th3F-5: On-Board Array Self-Calibration Using Amplitude-Only Proximal-Field Sensors and Machine-Learning-Based Phase Retrieval
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  • Th3G-4: A 140 GHz Low-Noise Amplifier in 45 nm RFSOI Based on a Joint-Noise-and-Gain-Optimized Embedding Network
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  • WSD-3: Design Methodologies for Low-Power Frequency Synthesizers
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  • WSG-5: Ka-Band CMOS TX-RX for SATCOM
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  • WSH-2: 3D Heterogenous Integration (3DHI) for Advanced Communications
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  • WSL-6: E- and D-Band Common-Base Power Amplifiers in SiGe-BiCMOS with Performance Enhanced by Current Clamping and Device Stacking
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  • WSI-4: Self-Interference Cancellation Techniques in Frequency Division Duplexing Receiver Front-Ends
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  • WSO-11: Progress in Cryogenic Circuits for Superconducting Qubit-Based Quantum Computing
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  • WSN-5: Interconnect and Control Challenges in Silicon Spin Qubit Quantum Computers
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  • WSF-5: Navigating the Challenges of 300GHz CMOS Transceivers: A Comparative Analysis with Photonics-Based and D-Band CMOS Configurations
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  • WSB-4: Sensing with mm-Wave 5G: Extracting Spatial Information Leveraging Directional Beams
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  • QUB1-2: Microwave Engineering of Quantum Computers
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  • WSR-3: Combined System of Wireless Power Transfer and Communication
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  • WMI-9: Design and Simulation of Waveguide-Based Devices in 2D Dirac Materials
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  • WMG-6: Innovations in GaN-on-Silicon Technology for High Performance Power and RF Applications
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  • WML-10: Butterfly Matrices and Tensors: New Tools for High-Frequency Integral and Differential Equation Solvers, and High-Dimensional Transforms
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