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Technical Session Audience Rating IMS

Displaying 1751 - 1800 of 2745
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  • Tu1B-3: A Receiver-Assisted Joint Linearization Scheme for U6G Uplink Coverage Enhancement
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  • Tu1C-4: A 22nm CMOS 15–25GHz Dual-Differential Driver for RF Silicon Photonic Front-End
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  • Tu1E-1: A Cryogenic Front-End Module Applied to Readout Two-Qubits with FDM Technology in Superconducting Quantum Computing System
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  • Tu1E-5: A Demonstration of Multi-Floating Superconducting Qubits on a 3D Flip-Chip Platform with TLS Loss Mitigation via Apertures
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  • Tu2A-1: Frequency-Spatial Adaptive Digital Beamforming Technique for Range-Angle Decoupling With High-Resolution MIMO Radar
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  • Tu2B-4: Enhanced Channel Capacity Underwater Multi-Diver Communication with Dual-Resonant Magnetoquasistatic Coupling
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  • Tu2C-4: High Sensitivity W-Band LEKID-Based On-Chip Polarimeter
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  • Tu2D-4: 10 Watt CW Power Handling SPDT RF Switch Using E-Mode p-GaN Dual-Gate HEMT Technology
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  • Tu2E-4: Recurrent Neural Network Modeling of Radio Frequency Amplifiers for System-Level Simulation and Design
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  • Tu2F-3: 1.9GHz–4.1GHz CMOS Rectifier with Over 48% Efficiency Using Inductive Feedback and CRT Reduction for Beamforming WPT
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  • Tu3A-4: A 0.3dB-NF SiGe LNA Array for 10.5T Multi-Channel MRI Receivers
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  • Tu3B-1: 150GHz-Band Compact Phased-Array AiP Module for XR Applications toward 6G
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  • Tu3B-4: Body Proximity Detection Based on Reflections of Multi-Antenna Uplink Transmission from a 5G Mobile Handset
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  • Tu3D-3: A 280GHz Sub-Harmonic Injection Locked Oscillator in 45nm CMOS PD SOI
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  • Tu3E-5: A High-Linearity Quasi-Darlington Amplifier with Sub-Degree AM-PM for WLAN Applications
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  • Tu4A-1: Through-the-Wall Concurrent Vital Signs Monitoring of Three Subjects Using Single-Channel CW Radar and Independent Component Analysis
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  • Tu4B-2: A 2:1 Bandwidth 3–6GHz Dual-Polarized True-Time-Delay Based Reconfigurable Intelligent Surface (RIS)
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  • Tu4C-3: Continuous Current Mode Class-F Power Amplifier: A Solution for Bandwidth Extension in Low Breakdown Voltage Applications
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  • Tu4D-2: Sub-THz Phase Shifter Using a Photoconductive Solid-State Plasma Evanescent-Mode Waveguide Switched Stub
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  • Tu4E-5: Neural Network Based Nonlinear Forward Model Identification for Digital MIMO Arrays Under Load Modulation
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  • Tu4F-5: An Interleaved 1×8 Dual-Polarized L-band Phased Array with Digital Transmit/Receive Beamforming Using RFSoC
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  • We1B-6: A 10-GHz Localized-LO-Phase-Shifting Phased-Array Transmitter
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  • We1D-4: Fusing Leontovich Boundary Conditions and Scalar 2D FEM to Compute Lid and Lateral Wall Losses in H-plane Waveguide Devices
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  • We1E-5: Band-Pass Filter Based on Stacked Metal Plates in V-Band Waveguide Technology
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  • We1G-5: A DC-to-170GHz Direct-Coupled Mixer Achieving 47dB LO-RF Isolation in 250nm InP DHBT Technology
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  • We2B-1: A 22–30GHz Ultra Low RMS Phase Error SiGe HBT BiCMOS Active Vector Modulator Phase Shifter with a Tunable Two-Section Lumped Element Differential Quadrature Hybrid
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  • We2B-4: A 16.2-to-22.2-GHz Phased-Array Receiver with -60-to-85°C Simultaneously Gain and NF Temperature Compensation Supporting 24Gb/s 64QAM Modulation
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  • We2D-2: Green’s Function Analysis of Spatially Discrete Traveling-Wave Modulated (Parametric) Loop Networks
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  • We2E-2: Novel Radial Combiners with Integrated Low Pass Filtering Function
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  • We2G-4: A 100–180-GHz InP Distributed Frequency Doubler with 11.5dBm Peak Output Power Using a Power-Bandwidth Enhancement Technique
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  • We2H-3: A 9-to-13.5GHz 29.2-dBm-PSAT 44.4%-PAE Power Amplifier Using Extended Cascode Cores and 4-to-1 Folded Transformers in 130-nm CMOS SOI
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  • We3B-3: A 71-to-76GHz 8-Element Switchless Isolated Spectrum Phased-Array Transceiver with Direct-Modulation and Reflectionless Sliding-IF
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  • We3C-1: A Highly Linear 4W Differential SOI-CMOS RF Switch
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  • We3D-2: A Simple Closed-Form CAD Approach for Sensitivity Analysis and Optimization of Passive Networks Against Load Variations
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  • We3G-2: A 19.3-to-27.3GHz Area-Reuse Double Dual-Core Complementary Class-F-1 VCO with Non-Interfering Multiple Resonances Achieving 203.3dBc/Hz FoMT and 213.3dBc/Hz FoMTA
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  • IF1-1: Ku-Band Multi-Functional Bandpass Filtering Isolators (BPFIs) Using GaAs Coupled-Line-Based Unilateral Frequency-Selective Stages
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  • IF1-6: USB Type-C Receptacle Connector with Ceramic Insulator and Three-Layer Ground Plates
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  • IF1-13: A Wideband TIA-Driver Unit in 22-nm CMOS FDSOI for Integrated Microwave Optoelectronic Oscillators
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  • IF1-19: Accurate Large-Scale Motion Sensing With FMCW Radar Based on Range-Dependent DFT Technique
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  • IF1-23: A 28nm CMOS Almost All-Digital 0.5 to 4.0GHz Ultra-Wideband Ground Penetrating Radar for Lunar Surface Exploration
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  • IF1-28: High Power-Added-Efficiency AlGaN/GaN E-Mode HEMTs for Low-Supply-Voltage RF Terminal Applications
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  • IF1-34: A SiGe J-Band Gilbert Cell-Based Frequency Doubler and Power Amplifier Chain with 10dBm Output Power
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  • IF1-40: TCN-DPD: Parameter-Efficient Temporal Convolutional Networks for Wideband Digital Predistortion
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  • IF1-46: Extended D-Band Low-Noise-Amplifier MMICs Based on a 50-nm Metamorphic HEMT Technology
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  • Th1A-3: Evaluation of Stacked Structure for 160GHz End-Fire Type Compact Antenna-in-Package Considering Thermal Design
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  • Th1B-2: A Low-Loss, Wideband, 0–110GHz SPDT Using PCM RF Switches with Integrated CMOS Drivers
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  • Th1C-4: Twisted-Shaped Millimeter-Wave Hybrid Couplers in 150nm GaN Technology for 5G Applications
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  • Th1D-4: Dielectric Measurements of Conventional and 3-D Printed Substrate Materials from 50GHz to 1.5THz Using Free-Space and TDS Methods
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  • Th1G-1: Broadband and Power-Efficient Optoelectronic Transmitter Monolithically Integrated in a SiGe BiCMOS ePIC Technology
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  • Th1G-5: A 0.9pJ/Bit 56Gb/s High-Swing Tri-Mode Wireline Transmitter with 6-Bit DAC Controlled Tailless-CML Driver and Impedance Calibration Loop
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