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Technical Session Audience Rating IMS

Displaying 1651 - 1700 of 2745
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  • WMR-3: Broadband High Efficiency S-LMBA Design
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  • WMQ-5: Characterization Techniques Tailored to GaN Devices for Communication Applications
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  • Tu1A-3: An 120GHz 8×8 FMCW MIMO Radar System With 90° Biaxial FOV for Autonomous Navigation of UAVs in 3-D Space
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  • Tu1B-3: A Receiver-Assisted Joint Linearization Scheme for U6G Uplink Coverage Enhancement
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  • Tu1C-4: A 22nm CMOS 15–25GHz Dual-Differential Driver for RF Silicon Photonic Front-End
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  • Tu1E-1: A Cryogenic Front-End Module Applied to Readout Two-Qubits with FDM Technology in Superconducting Quantum Computing System
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  • Tu1E-5: A Demonstration of Multi-Floating Superconducting Qubits on a 3D Flip-Chip Platform with TLS Loss Mitigation via Apertures
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  • Tu2A-1: Frequency-Spatial Adaptive Digital Beamforming Technique for Range-Angle Decoupling With High-Resolution MIMO Radar
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  • Tu2B-4: Enhanced Channel Capacity Underwater Multi-Diver Communication with Dual-Resonant Magnetoquasistatic Coupling
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  • Tu2C-4: High Sensitivity W-Band LEKID-Based On-Chip Polarimeter
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  • Tu2D-4: 10 Watt CW Power Handling SPDT RF Switch Using E-Mode p-GaN Dual-Gate HEMT Technology
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  • Tu2E-4: Recurrent Neural Network Modeling of Radio Frequency Amplifiers for System-Level Simulation and Design
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  • Tu2F-3: 1.9GHz–4.1GHz CMOS Rectifier with Over 48% Efficiency Using Inductive Feedback and CRT Reduction for Beamforming WPT
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  • Tu3A-4: A 0.3dB-NF SiGe LNA Array for 10.5T Multi-Channel MRI Receivers
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  • Tu3B-1: 150GHz-Band Compact Phased-Array AiP Module for XR Applications toward 6G
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  • Tu3B-4: Body Proximity Detection Based on Reflections of Multi-Antenna Uplink Transmission from a 5G Mobile Handset
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  • Tu3D-4: 300-GHz-Band Single-Balanced Resistive Mixer Module in 60-nm InP HEMT Technology with LO Leakage Suppressing Function
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  • Tu3E-5: A High-Linearity Quasi-Darlington Amplifier with Sub-Degree AM-PM for WLAN Applications
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  • Tu4A-1: Through-the-Wall Concurrent Vital Signs Monitoring of Three Subjects Using Single-Channel CW Radar and Independent Component Analysis
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  • Tu4B-2: A 2:1 Bandwidth 3–6GHz Dual-Polarized True-Time-Delay Based Reconfigurable Intelligent Surface (RIS)
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  • Tu4C-3: Continuous Current Mode Class-F Power Amplifier: A Solution for Bandwidth Extension in Low Breakdown Voltage Applications
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  • Tu4D-2: Sub-THz Phase Shifter Using a Photoconductive Solid-State Plasma Evanescent-Mode Waveguide Switched Stub
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  • Tu4E-5: Neural Network Based Nonlinear Forward Model Identification for Digital MIMO Arrays Under Load Modulation
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  • We1B-1: KEYNOTE: A MIMO Perspective of Phased Arrays and its Applications
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  • We1B-6: A 10-GHz Localized-LO-Phase-Shifting Phased-Array Transmitter
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  • We1D-4: Fusing Leontovich Boundary Conditions and Scalar 2D FEM to Compute Lid and Lateral Wall Losses in H-plane Waveguide Devices
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  • We1E-5: Band-Pass Filter Based on Stacked Metal Plates in V-Band Waveguide Technology
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  • We1G-5: A DC-to-170GHz Direct-Coupled Mixer Achieving 47dB LO-RF Isolation in 250nm InP DHBT Technology
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  • We2B-2: A 28/39-GHz Reconfigurable Phased-Array Transmitter Front-End for 5G New Radio in a 65nm CMOS
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  • We2B-4: A 16.2-to-22.2-GHz Phased-Array Receiver with -60-to-85°C Simultaneously Gain and NF Temperature Compensation Supporting 24Gb/s 64QAM Modulation
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  • We2D-2: Green’s Function Analysis of Spatially Discrete Traveling-Wave Modulated (Parametric) Loop Networks
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  • We2E-2: Novel Radial Combiners with Integrated Low Pass Filtering Function
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  • We2G-4: A 100–180-GHz InP Distributed Frequency Doubler with 11.5dBm Peak Output Power Using a Power-Bandwidth Enhancement Technique
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  • We2H-3: A 9-to-13.5GHz 29.2-dBm-PSAT 44.4%-PAE Power Amplifier Using Extended Cascode Cores and 4-to-1 Folded Transformers in 130-nm CMOS SOI
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  • We3B-4: A D-Band Front-End T/R MMIC in a 70-nm GaN HEMT Technology
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  • We3C-1: A Highly Linear 4W Differential SOI-CMOS RF Switch
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  • We3D-2: A Simple Closed-Form CAD Approach for Sensitivity Analysis and Optimization of Passive Networks Against Load Variations
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  • We3G-3: A 60GHz Super Harmonic Injection Locked Oscillator with Quadrature Outputs
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  • We3H-4: A Sub-6GHz Ultra-Compact 69.8% Drain Efficiency Harmonic Control Doherty Power Amplifier in GaN Technology
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  • IF1-5: Metasurface Design for RCS Reduction Applications
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  • IF1-11: Tensor Train Optimization for Polynomial Chaos for High Dimensional Uncertainty Quantification
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  • IF1-17: Material Characterization of Graphene Oxide and Reduced Graphene Oxide Using Resonance Methods
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  • IF1-22: Ultra-Wideband 6-Bit Passive Phase Shifter with Open-Circuit Microstrip Pseudo-π Network and Low RMS Phase Error
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  • IF1-28: High Power-Added-Efficiency AlGaN/GaN E-Mode HEMTs for Low-Supply-Voltage RF Terminal Applications
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  • IF1-32: S-Parameter-Based Simulation Technique and Crosstalk Suppression for Large-Scale Superconducting Quantum-Computing Chip Design
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  • IF1-38: Fast-Switchable 3.6GHz GaN Doherty Power Amplifier for Energy-Efficient Non-Continuous Transmission of 256-QAM Signals
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  • IF1-44: A 30-mW D-Band High-Sensitivity Self-Injection-Locked Radar Sensor with Integrated SIW Antenna in 70-nm GaAs pHEMT Technology
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  • Th1A-2: Empty-SIW (eSIW) Based Beamformer System on Glass Package for G-Band Phased Array Applications
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  • Th1B-1: Edge Coupled DC–60GHz Different SPDT MEMS Switch for High-Speed Digital Applications
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  • Th1C-2: A Compact Millimeter-Wave Phase Shifter Integrated Variable Coupler in SIW Technology for Beam-Forming Applications
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