Microwave Week 2020 Dashboard

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Displaying 1601 - 1650 of 2759

Th1D-1: An EVA-Based High-Power and Absorptive Frequency-Selective Plasma Limiter
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Th1F-1: A High-Efficiency E-Band GaN Doherty Power Amplifier with 35.7dBm Output Power and 22.8%/16.8% Peak/6-dB Back-Off Efficiency
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Th1G-2: DC-to-89-GHz AMUX-based IQ Modulator in 250-nm InP HBT Technology for Multiplexing-DAC Subsystem
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Th1G-6: A Bi-Directional 5-Bit 131.5–150.5GHz Digital-Programmable Phase Shifter with 2.1°/0.3dB RMS Phase/Gain Errors in 40nm CMOS
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Th2A-4: First Demonstration of Highly Scaled RF GaN-on-Si Dielets Embedded in Glass Interposer
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Th2B-4: Miniature High-Coupling Lithium Niobate Thin Film Bulk Acoustic Wave Resonators at 10–30GHz
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Th2C-5: A Novel Multi-Functional Filtering Amplitude/Phase Circuit with Tunable Frequency Using Simple Phase Control Network
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Th2D-4: Cross-Spectrum Phase Noise Measurements of 10-15-Level Stability Photonic Microwave Oscillators
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Th2G-1: A Ku-Band CMOS LNA with Symmetric Polarity-Selective Transformer for Efficient 180° Phase Shifting
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Th2G-6: First Demonstration of MMIC Low-Noise Amplifiers Operating at Ka-Band Realized with Enhancement-Mode Gallium Nitride HEMTs
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Th3A-3: Aerosol Jet Fully 3D Printed RF Attenuator Using Resistive Ink
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Th3B-2: On-Wafer Characterization of K-Band to V-Band GaN IMPATT Diodes
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Th3B-5: Small- and Large-Signal Characterization of RF Substrates Down to Cryogenic Temperatures
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Th3D-2: Integrated Solution for Linear and Non-Linear Single-Touchdown On-Wafer Characterization of D-Band Mixers
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Th3F-2: A D-Band InP Power Amplifier Featuring Fully AI-Generated Passive Networks
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Th3G-2: An 8–12.2GHz CMOS Low-Noise Amplifier with Partially Tail-Coupled Transformer and Large-Transistor Achieving 1.8dB Average NF
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WSD-8: Living Networks: Bioelectronic IoT and the Future of Secure, Energy-Efficient Wireless Systems
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WSG-9: Bringing Commercial Cellular Access to Space
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WSH-7: Advances in Wafer-Level Packaging (WLP) and Heterogeneous Integration for mm-Wave Phased Arrays
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WSL-5: mm-Wave High Efficiency, High Linearity GaN HEMT, GaAs and InP HBT Power Amplifiers
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WSI-9: Intelligent Self-Interference Mitigation for Integrated Radios
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WSJ-5: Antenna-VSWR-Resilient Load-Modulated Balanced Amplifier (LMBA) for Massive MIMO Communications
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WSF-9: Phased Array in mm-Wave and Sub-THz for Communication and Sensing
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WSK-2: Substrateless Platform: A Promising Route to THz Integration
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WSP-2: Fully Integrated, Time-Varying Non-Reciprocal Components for RF and mm-Wave Systems
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WMI-1: Tutorial: Introduction to Circuit Quantum Electrodynamics
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WME-3: Efficient Generation of Exact Filter Models for High-Power Analysis
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WMG-10: Reliability Challenges of GaN-on-Si RF Technologies
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WMD-5: Manipulating Surface Acoustic Wave Phonons in the Quantum Regime
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WMK-8: Thermal Dynamics in Low Thermally Conductive Ultra Wide Bandgap Semiconductors
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WMM-8: Gallium Nitride: A Promising Technology for Fully Integrated Transceiver Front-End
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WMF-10: mm-Wave On-Wafer Measurements from a CMOS IC Designer’s Perspective
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WMH-3: Introduction to Physical Optics for Modeling Complex Microwave and Antenna Devices
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WMC-2: Superconducting Detectors for THz Space Astrophysics
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WMO-10: An AI Foundation Model for Contextual Interpretation of Radar Data
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WMR-3: Broadband High Efficiency S-LMBA Design
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WMQ-5: Characterization Techniques Tailored to GaN Devices for Communication Applications
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Tu1A-3: An 120GHz 8×8 FMCW MIMO Radar System With 90° Biaxial FOV for Autonomous Navigation of UAVs in 3-D Space
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Tu1B-3: A Receiver-Assisted Joint Linearization Scheme for U6G Uplink Coverage Enhancement
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Tu1C-4: A 22nm CMOS 15–25GHz Dual-Differential Driver for RF Silicon Photonic Front-End
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Tu1E-1: A Cryogenic Front-End Module Applied to Readout Two-Qubits with FDM Technology in Superconducting Quantum Computing System
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Tu1E-5: A Demonstration of Multi-Floating Superconducting Qubits on a 3D Flip-Chip Platform with TLS Loss Mitigation via Apertures
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Tu2A-1: Frequency-Spatial Adaptive Digital Beamforming Technique for Range-Angle Decoupling With High-Resolution MIMO Radar
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Tu2B-4: Enhanced Channel Capacity Underwater Multi-Diver Communication with Dual-Resonant Magnetoquasistatic Coupling
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Tu2C-4: High Sensitivity W-Band LEKID-Based On-Chip Polarimeter
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Tu2D-4: 10 Watt CW Power Handling SPDT RF Switch Using E-Mode p-GaN Dual-Gate HEMT Technology
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Tu2E-4: Recurrent Neural Network Modeling of Radio Frequency Amplifiers for System-Level Simulation and Design
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Tu2F-3: 1.9GHz–4.1GHz CMOS Rectifier with Over 48% Efficiency Using Inductive Feedback and CRT Reduction for Beamforming WPT
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Tu3A-4: A 0.3dB-NF SiGe LNA Array for 10.5T Multi-Channel MRI Receivers
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Tu3B-1: 150GHz-Band Compact Phased-Array AiP Module for XR Applications toward 6G
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Microwave Week 2020 Dashboard

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