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Technical Session Audience Rating IMS

Displaying 1401 - 1450 of 2745
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  • Tu3A-5: Resonance Frequency Retuning System for Flexible MRI Coils
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  • Tu3B-2: A 28GHz Beamformer Element Demonstration Using Monolithically Integrated GaN and Si Transistors in 300mm GaN-on-Si Technology
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  • Tu3B-5: Dual-Band Near-Field Probing Antenna for Enhancing the Performance of Dual-Band Shared-Aperture Linear-Polarized Phased Antenna Arrays
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  • Tu3D-4: 300-GHz-Band Single-Balanced Resistive Mixer Module in 60-nm InP HEMT Technology with LO Leakage Suppressing Function
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  • Tu3F-2: A Self-Sustaining Regenerative Amplifier Sensor Using Perfect Metamaterial Absorber for Liquid Concentration Prediction
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  • Tu4A-2: Asynchronous Space-Time Coding Direct Antenna Modulation-Enabled Automated Beam-Scanning Multi-Target Vital Sign Radar Sensing
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  • Tu4B-3: Chirp Sequence-Based Beamwidth Control in a Reconfigurable Intelligent Surface
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  • Tu4C-3: Continuous Current Mode Class-F Power Amplifier: A Solution for Bandwidth Extension in Low Breakdown Voltage Applications
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  • Tu4D-3: A Compact 8.2mW Complementary Current-Reusing D-Band Frequency Quadrupler in 22nm FDSOI CMOS
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  • Tu4F-2: Simultaneous Multibeam Operation in 19.5GHz SATCOM Receive Phased Arrays Using Orthogonally-Coded Nested Subarrays
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  • We1B-2: A 1.53-mm² Fully-Integrated Wi-Fi 7 Front-End Module with 1.65-dB NF and 41.9% FBW in 0.25-µm GaAs p-HEMT Technology
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  • We1C-1: Multi-functional Ultrawideband BPFs with Reconfigurable Absorptive and Tunable Attenuation Characteristics
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  • We1D-5: A Finite Element Method to Model Transmission Lines with Various Rough Conductor Surfaces up to 110GHz
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  • We1E-6: Ultra-Compact Surface-Mountable Air-Filled Coaxial Filter for 5G Applications
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  • We1H-2: A Ku-Band Input Harmonically Tuned Class-F GaAs MMIC Power Amplifier Achieving 28.4-dBm Psat and 56% Peak PAE
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  • We2B-2: A 28/39-GHz Reconfigurable Phased-Array Transmitter Front-End for 5G New Radio in a 65nm CMOS
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  • We2C-1: Direct Synthesis for High Selectivity Lowpass/Bandpass Co-Designed Filters with Independent Sub-Band Responses
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  • We2D-3: Equation-Based Solver for High-Performance SI CuMax Routing Within Pin Fields
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  • We2E-4: Rectangular Waveguide-Based CRLH Frequency Scanning Array Antenna Operating at W-Band
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  • We2G-4: A 100–180-GHz InP Distributed Frequency Doubler with 11.5dBm Peak Output Power Using a Power-Bandwidth Enhancement Technique
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  • We2H-4: A Compact Doubly Neutralized Ku Band Power Amplifier with 39% Peak PAE and 23 dBm Output Power in 22FDX+ EDMOS for 6G FR3
    0 Originality
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  • We3B-4: A D-Band Front-End T/R MMIC in a 70-nm GaN HEMT Technology
    0 Originality
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  • We3C-2: Miniaturized D-Band SPDT/DPDT Switches Using Series Triple Coupled Transformer Cores in 65-nm CMOS SOI
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  • We3D-3: Frequency-Query Enhanced Electromagnetic Surrogate Modeling with Edge Anti-Aliasing Pixelation for Bandpass Filter Inverse Design
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  • We3G-4: Low-Power and Low-Phase Noise 94-GHz and 107.2-GHz Differential Fundamental Oscillators in 70-nm GaAs pHEMT Technology
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  • We3H-5: A Ka-Band GaN Doherty Power Amplifier with High Efficiency Over a Fractional Bandwidth of 20.4%
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  • IF1-6: USB Type-C Receptacle Connector with Ceramic Insulator and Three-Layer Ground Plates
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  • IF1-12: Detection Algorithm for Waveguide Connection and Probe Contact States Based on Machine Learning in Frequency up to 1.1THz
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  • IF1-18: A High-Efficiency Outphasing Power Amplifier Utilizing a Synthesized Direct-Matching Technique Based on Two-Section Branch-Line Coupler Output Combiner
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  • IF1-22: Ultra-Wideband 6-Bit Passive Phase Shifter with Open-Circuit Microstrip Pseudo-π Network and Low RMS Phase Error
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  • IF1-28: High Power-Added-Efficiency AlGaN/GaN E-Mode HEMTs for Low-Supply-Voltage RF Terminal Applications
    0 Originality
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  • IF1-33: High-Efficiency Low-Complexity ASK Transmitter Using an Inverse Class-F Power Amplifier with a Nonuniform Transmission-Line-Based Load Transformation Network
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  • IF1-39: Predicting the Fidelity of Multiplexed Superconducting Qubit Readout with Multiphysics Numerical Methods
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  • IF1-45: Direction Finding for Software Defined Radios with Switched Uniform Circular Arrays
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  • Th1A-3: Evaluation of Stacked Structure for 160GHz End-Fire Type Compact Antenna-in-Package Considering Thermal Design
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  • Th1B-2: A Low-Loss, Wideband, 0–110GHz SPDT Using PCM RF Switches with Integrated CMOS Drivers
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  • Th1C-3: Ka-Band AFSIW Circuit-on-Substrate for Satellite Applications
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  • Th1D-4: Dielectric Measurements of Conventional and 3-D Printed Substrate Materials from 50GHz to 1.5THz Using Free-Space and TDS Methods
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  • Th1F-4: A 16-Way 115–129GHz High Power Amplifier with 20.9dBm PSAT and 17.6dBm P1dB in 40nm Bulk CMOS
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  • Th1G-4: A >22GS/s, 44dB SNDR Wideband 4×4 Time-Interleaved Sampling Front-End with Bulk-Driven Mismatch Calibration in 22nm FDSOI
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  • Th2A-3: High Performance Waveguide Launcher in Interposer Package Technology for 77/79GHz Automotive 4D Imaging Radar
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  • Th2B-3: Frequency and Bandwidth Design of Millimeter Wave Thin-Film Lithium Niobate Acoustic Filters
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  • Th2C-3: Novel Reflective-Type Bandpass Filter with Simultaneously Integrated Tunable Attenuation and Phase Shifting Functions
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  • Th2D-3: A Wideband Digital Compensation Model Based on Fast Bandwidth Sensing for Zero-IF Receiver
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  • Th2F-4: 208GHz InP Distributed Amplifier with Combining Loss Reduction Techniques
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  • Th2G-4: A 71–86-GHz Receiver with 5-GHz IF Signal Bandwidth for E-Band Broadband Communication in 65-nm CMOS
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  • Th3A-3: Aerosol Jet Fully 3D Printed RF Attenuator Using Resistive Ink
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  • Th3B-2: On-Wafer Characterization of K-Band to V-Band GaN IMPATT Diodes
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  • Th3B-5: Small- and Large-Signal Characterization of RF Substrates Down to Cryogenic Temperatures
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  • Th3D-2: Integrated Solution for Linear and Non-Linear Single-Touchdown On-Wafer Characterization of D-Band Mixers
    0 Originality
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