Microwave Week 2020 Dashboard

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WMM-9: Reciprocal Full-Duplex FMCW Radar Systems with Self-Interference Cancellation for High Accuracy Distributed Radar Networks
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WMA-4: Amplifiers with Multifunctionality and Integration on Internally Matched Wafer-Level-Package Using Silicon Interposer Technology
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WMH-7: Liquid Metal (LM) Enabled Microwave and mm-Wave Devices
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WMC-7: Importance of Big Ears in Space and on Ground in Astrophysics Applications
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WPTB1-4: Energy Mules for Space and Earth Exploration
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WMP-1: Fundamentals of Signal Integrity for High-Speed Applications and Advances in Packaging Technology
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Tu1A-1: A Fully Integrated Ka-Band FMCW Radar SoC with Baseband Accelerator for Vital Signs Monitoring in 40-nm CMOS
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Tu1A-5: Radar-Based Measurement of Image Rejection Ratio in Sub-THz Hartley Receivers with its Impact on Doppler Detection Accuracy
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Tu1B-4: Hardware-Software Platform Enabling Joint Communication and Radar Sensing at 25GHz with 1GHz Bandwidth
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Tu1D-2: A 7GHz High Efficiency GaN Doherty Power Amplifier Module for 5G Massive MIMO Base-Stations
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Tu1E-2: Modeling Josephson Traveling-Wave Parametric Amplifiers with Electromagnetic and Circuit Co-Simulation
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Tu1E-4: A Photonic Link at 4.7K with >1GHz Bandwidth Towards an Optical Quantum Computing Interface
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Tu1F-5: Overcoming Efficiency Degradation in Wireless Power Transfer Systems: A Supply Voltage Modulation Method Empowered by 5.64-GHz 256-Element Antenna Array Receiving 10.6-Watt
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Tu2B-2: 60 Mbps Time-Domain Video Transfer Using Body Communication
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Tu2C-3: An Ultra-Low-Noise 600–700GHz Heterodyne Terahertz Receiver for Ground-Based Astronomy Observations
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Tu2D-2: An Integrated Doherty Power Amplifier Module Based on an Advanced GaN-on-Si HEMT Technology and a Wideband Power Combiner
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Tu2E-2: DeltaDPD: Exploiting Dynamic Temporal Sparsity in Recurrent Neural Networks for Energy-Efficient Wideband Digital Predistortion
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Tu2F-2: High-Power Quasi-Vertical GaN Schottky Barrier Diode RF Rectifier Based on Impedance Compression Network for WPT Applications
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Tu3A-2: Advanced Immunoassay Detection Using Microwave Whispering Gallery Mode Resonators
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Tu3B-1: 150GHz-Band Compact Phased-Array AiP Module for XR Applications toward 6G
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Tu3B-2: A 28GHz Beamformer Element Demonstration Using Monolithically Integrated GaN and Si Transistors in 300mm GaN-on-Si Technology
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Tu3D-1: A 4–240-GHz InP Variable-Gain Amplifier Using an Analog-Controlled Input Attenuation Network
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Tu3E-3: Simple Analog Pre-Distorter Design with Controllable AM/AM and AM/PM Distortion
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Tu3F-5: AoA Sensing Enabled Reconfigurable Intelligent Surface
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Tu4A-5: Moving Person Vital Sign Detection Using Four-Channel Phase- and Quadrature Self-Injection-Locked Radar and MPCA Method for Dynamic Clutter Immunity
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Tu4B-6: Low Power Consumption and Beam-Sustainable Reconfigurable Intelligent Surface for Fixed Wireless Communication at Millimeter-Wave 5G Band
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Tu4D-1: Ultrawideband Vector Modulators for Next-Gen Wireless Networks in the 200–480GHz Range
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Tu4E-3: Reference Phase Adjustment Technique with Cross-Polarization Cancellation for Enhanced Digital Predistortion in Mobile Dual-Polarized Arrays
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Tu4F-4: Polarimetric Spectrometer Receivers for Remote Sensing of Ionospheric Currents
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We1B-5: A C-Band High-Precision Amplitude-Phase Control Multi-Functional Chip with Symmetric Polyphase Filter and X-Type Attenuator
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We1C-4: Miniaturized Multilayer and Self-Packaged Triple-Mode Bandpass Filter with High Selectivity and Wide Stopband
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We1E-3: Advances on Size Reduction and Spurious Suppression in Rectangular Waveguide Filters
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We1G-4: Monolithic Implementation and Performance Comparison of Three Single Balanced Architectures for D-Band HEMT Mixers
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We1H-4: An X-Band 35-dBm Compact Continuous-Mode Class-J Power Amplifier in 0.25-µm GaN Process
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We2B-3: A 28GHz Compact Phased-Array Beamformer with 21.3dBm PSAT and 5.2dB Noise Figure in 40nm CMOS
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We2C-3: Compact 7–23-GHz Bandpass Filter with High Selectivity and Wide Stopband Using Hybrid Microstrip/SIDGS Scheme for 6G Application
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We2D-6: THz Diffraction Radiation Analysis of Finite Graphene Strip Grating with Grounded Dielectric Substrate Excited by Electron Beam
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We2G-2: A 110–130-GHz Frequency Quadrupler with 12.5% Drain Efficiency in 22-nm FD-SOI CMOS
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We2H-2: A High-Efficiency GaAs HBT Power Amplifier for 6G FR3 Applications
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We3B-2: A 60-GHz RadCom Down-Converter in 22-nm CMOS FDSOI for Short-Range Hand Gesture Sensing and High-Data-Rate Proximity Communication
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We3B-6: A 71–76GHz Four-Element Phased-Array Receiver with Compact Footprint in 65-nm CMOS
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We3C-5: An Ultra-Compact D-Band SIW Filter with Multifunction Transitions to Coplanar Input/Output
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We3D-6: Analysis of a Self-Injected Super-Regenerative Oscillator for Motion Sensing
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We3H-2: A Broadband Doherty-like Load-Modulated Balanced Amplifier with an Optimized Impedance Transformation Ratio in InGaP/GaAs HBT Process for Handset applications
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IF1-2: GaN-Based Power Amplification Unit for the Europa Clipper Mission
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IF1-8: A 28GHz Dual-Mode Power Amplifier for Enhanced Load Resiliency or Back-Off Efficiency Enhancement in 22nm FDSOI Process
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IF1-15: A 230-GHz 3.5-dBm Phase-Shifter-Embedded Frequency Tripler with 360° Phase-Shifting Range in 40-nm CMOS
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IF1-20: A THz Attenuator Based on Voltage-Tunable Whispering Gallery Mode Resonator
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IF1-25: 2200W High-Efficiency Amplifier Module Covering 325MHz and 352MHz Applications
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IF1-31: Analysis of High-Efficiency Power Amplifiers Exploiting Input Harmonics and Nonlinear I-V Knee Characteristics
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Microwave Week 2020 Dashboard

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