Microwave Week 2020 Dashboard

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Technical Session Audience Rating IMS

Displaying 1301 - 1350 of 2745
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  • Th2A-1: Novel Low-Loss Shielded Interconnects for D-band/sub-THz Applications Using Microscale Metal Printing Technologies
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  • Th2B-2: Low-Loss Longitudinal Leaky SAW Filter with 1350MHz Bandwidth on LiNbO₃/SiO₂/SiC Platform for Wi-Fi 7
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  • Th2C-1: A Reconfigurable Filtering Circulator/Isolator with Continuously Controllable Center Frequency and Insertion Phase
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  • Th2D-2: Millimeter-Wave Wideband Active Load-Pull System Using Vector Network Analyzer Frequency Extenders
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  • Th2F-2: 300-GHz-Band InP HBT Power Amplifier Module Enabling 280-Gbps 0-dBm Signal Generation with Digital Predistortion
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  • Th2G-2: A 130GHz 360° Gain-Invariant Phase Shifter with 5.625° Phase Resolution, 0.19° RMS Phase Error and < 0.56dB RMS Gain Error
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  • Th2G-6: First Demonstration of MMIC Low-Noise Amplifiers Operating at Ka-Band Realized with Enhancement-Mode Gallium Nitride HEMTs
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  • Th3A-5: Integration of Millimeter-Wave Air Filled Cavities and Filters Using Vertically Aligned Carbon Nanotubes
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  • Th3B-3: AlN/GaN MIS-HEMT With GeN Gate Dielectric for mm-Wave Applications
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  • Th3C-2: Tunable Dual-Band Coaxial Filter with Independent Band Control Using a Single Tuning Element Per Band
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  • Th3D-3: Characterization Approaches to Reduce Process Variation Dependencies for On-Wafer Power Calibration Transfer Devices in Bi/CMOS Technologies
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  • Th3F-3: AI-Assisted Template-Seeded Pixelated Design for Multi-Metal-Layer High-Coupling EM Structures: A Ku-Band 6G FR3 PA in 22nm FDX+
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  • Th3G-3: Broadband LNA with Dual-Resonance Matching Network with Capacitive Feedback for Improved Gain and Noise Figure Using 0.1-µm GaAs pHEMT Technology
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  • WSE-1: Integrating FR2 OAI and Hybrid RIS: Enhanced Network Management Implementing FR2 OAI, ORAN, and RIS
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  • WSM-1: VLC/LiFi for NextG Wireless
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  • WSH-8: Glass Core Technology as a Building Block for Advanced Packaging Architectures
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  • WSA-1: Reference Oscillator Architectures and Design Considerations
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  • WSO-1: Superconducting Qubits: Wiring up Quantum Entanglement
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  • WSJ-1: Gallium Nitride on Silicon Carbide Technologies for Sub-20GHz Applications
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  • WSF-5: Navigating the Challenges of 300GHz CMOS Transceivers: A Comparative Analysis with Photonics-Based and D-Band CMOS Configurations
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  • WSB-4: Sensing with mm-Wave 5G: Extracting Spatial Information Leveraging Directional Beams
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  • QUB1-2: Microwave Engineering of Quantum Computers
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  • AIB1-1: AI and Machine Learning for Microwave Design - An Introduction
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  • WMI-9: Design and Simulation of Waveguide-Based Devices in 2D Dirac Materials
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  • WMG-7: Challenges and Opportunities of GaN-on-Si Technology for Wireless Applications in the FR3 (8–24GHz) Band
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  • WMD-1: RF Acoustic Wave Resonators, Getting Started
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  • WMK-6: Ga₂O₃ FETs for Future Power and Harsh Environment Electronics
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  • WMM-7: Balanced Single-Antenna RF Transceiver Architectures for Frequency-Agile Full-Duplex Wireless Communications
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  • WMF-6: On-Wafer 4-Port Measurements from 70kHz to 220GHz in a Single Sweep
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  • WMJ-6: Leveraging Radio Astronomy Techniques for Enhanced RF and Microwave Sensing
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  • WMN-7: Multilayered Wearable Ultrasound Technology
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  • WMO-7: Understanding the Nuances of Being Human: Implications for Radar-Based Human Motion Classification
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  • RFB1-7: Tx/Rx Communications System Digital-to-RF Design and Test
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  • WMQ-2: Characterizing Low-Frequency Memory Effects using RF Real-Time NVNA Measurements
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  • Tu1A-3: An 120GHz 8×8 FMCW MIMO Radar System With 90° Biaxial FOV for Autonomous Navigation of UAVs in 3-D Space
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  • Tu1B-2: A V-Band OOK Transmitter with 14.5Gbps Data Rate and 11.1% DC-to-RF Efficiency in 65nm CMOS
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  • Tu1C-3: Multi-Channel Integrated Microwave Photonic Transmitter for Radio-over-Fiber Systems
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  • Tu1D-4: A 400W Symmetric Doherty Power Amplifier Covering 1.8–2.7GHz
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  • Tu1E-5: A Demonstration of Multi-Floating Superconducting Qubits on a 3D Flip-Chip Platform with TLS Loss Mitigation via Apertures
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  • Tu1F-5: Overcoming Efficiency Degradation in Wireless Power Transfer Systems: A Supply Voltage Modulation Method Empowered by 5.64-GHz 256-Element Antenna Array Receiving 10.6-Watt
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  • Tu2B-3: Body-Resonance Human Body Powering
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  • Tu2C-4: High Sensitivity W-Band LEKID-Based On-Chip Polarimeter
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  • Tu2D-3: System-in-Package Doherty Power Amplifier Using Hybrid LDMOS/GaN Line-Up for 5G Macro Driver Applications
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  • Tu2E-3: Enhancing Digital Predistortion Performance Under Load Mismatch Using a VSWR Generative Neural Network Simulator
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  • Tu2F-2: High-Power Quasi-Vertical GaN Schottky Barrier Diode RF Rectifier Based on Impedance Compression Network for WPT Applications
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  • Tu3A-3: Numerical Testbench for a priori Uncertainty Estimation of Dielectric Spectroscopy in Organ-on-Chip Devices
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  • Tu3B-1: 150GHz-Band Compact Phased-Array AiP Module for XR Applications toward 6G
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  • Tu3B-3: Ka-Band 4×4 Butler Matrix-Based Switched Beamformer Supporting Uniform EIRP Beams in Single-/Dual-Port Excitations
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  • Tu3D-2: A 4-420-GHz Distributed Amplifier MMIC in a 20-nm InGaAs-on-Si HEMT Technology With 11±2-dB Gain
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  • Tu3E-4: A GaAs HBT Doherty Power Amplifier with 31dBm Linear Output Power and 43% Efficiency by Using Dynamic IM3 Cancellation
    0 Originality
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    0 Voters
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