Microwave Week 2020 Dashboard

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We1G-5: A DC-to-170GHz Direct-Coupled Mixer Achieving 47dB LO-RF Isolation in 250nm InP DHBT Technology
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We2B-1: A 22–30GHz Ultra Low RMS Phase Error SiGe HBT BiCMOS Active Vector Modulator Phase Shifter with a Tunable Two-Section Lumped Element Differential Quadrature Hybrid
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We2B-4: A 16.2-to-22.2-GHz Phased-Array Receiver with -60-to-85°C Simultaneously Gain and NF Temperature Compensation Supporting 24Gb/s 64QAM Modulation
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We2C-4: Extraction of Coupling Matrix for Bandpass Filters Based on Magnitude of S-Parameters
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We2E-1: 50-Way W-Band All Waveguide Radial Combiner Design
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We2G-3: A D-Band ×15 Frequency Multiplier Chain in 45nm SiGe BiCMOS for Board-Level Packaged Array Applications
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We2H-2: A High-Efficiency GaAs HBT Power Amplifier for 6G FR3 Applications
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We3B-3: A 71-to-76GHz 8-Element Switchless Isolated Spectrum Phased-Array Transceiver with Direct-Modulation and Reflectionless Sliding-IF
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We3B-6: A 71–76GHz Four-Element Phased-Array Receiver with Compact Footprint in 65-nm CMOS
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We3C-5: An Ultra-Compact D-Band SIW Filter with Multifunction Transitions to Coplanar Input/Output
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We3G-2: A 19.3-to-27.3GHz Area-Reuse Double Dual-Core Complementary Class-F-1 VCO with Non-Interfering Multiple Resonances Achieving 203.3dBc/Hz FoMT and 213.3dBc/Hz FoMTA
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We3H-2: A Broadband Doherty-like Load-Modulated Balanced Amplifier with an Optimized Impedance Transformation Ratio in InGaP/GaAs HBT Process for Handset applications
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IF1-4: An Area-Efficient Reconfigurable Compact Multi-Band Directional Coupler in RF SOI CMOS Technology
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IF1-9: Electromagnetically Induced Transparency Based Metamaterials Integrated with Plasma Cells for High Power Microwave Protection
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IF1-17: Material Characterization of Graphene Oxide and Reduced Graphene Oxide Using Resonance Methods
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IF1-20: A THz Attenuator Based on Voltage-Tunable Whispering Gallery Mode Resonator
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IF1-27: Quantum Method for Solving S-Parameters of Lossless Waveguides Based on the HHL Method and Finite-Element-Method
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IF1-32: S-Parameter-Based Simulation Technique and Crosstalk Suppression for Large-Scale Superconducting Quantum-Computing Chip Design
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IF1-36: Multi-Functional Modulated Surface Based on M-Type Ferrite for mmWave Application
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IF1-43: A Compact Brick-Type 40GHz-Band DBF Transmit Antenna Module Using Direct Digital RF Technology
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Th1A-1: A D-Band Tx FOWLP Module with Silicon-Based Resonator Antenna Array
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Th1A-5: An Antipodal SIW-Fed Vivaldi Antenna at D-Band in LTCC for Flip-Chip RFIC Integration
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Th1C-1: Innovative Hybrid Stripline Guiding Structure for Wideband Crossover Implementation
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Th1D-3: Temperature and Humidity Effects on Electromagnetic Waves Utilizing 140GHz Radar Measurements
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Th1F-2: E-Band Power Amplifier with 32.2dBm Psat, 31.3dBm OP1dB Utilizing Commercial 0.10-µm GaAs pHEMT Technology
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Th1G-3: A 132GHz SiGe BiCMOS Sampler for Linear Front-Ends
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Th2A-1: Novel Low-Loss Shielded Interconnects for D-band/sub-THz Applications Using Microscale Metal Printing Technologies
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Th2B-2: Low-Loss Longitudinal Leaky SAW Filter with 1350MHz Bandwidth on LiNbO₃/SiO₂/SiC Platform for Wi-Fi 7
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Th2C-1: A Reconfigurable Filtering Circulator/Isolator with Continuously Controllable Center Frequency and Insertion Phase
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Th2D-3: A Wideband Digital Compensation Model Based on Fast Bandwidth Sensing for Zero-IF Receiver
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Th2F-2: 300-GHz-Band InP HBT Power Amplifier Module Enabling 280-Gbps 0-dBm Signal Generation with Digital Predistortion
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Th2G-2: A 130GHz 360° Gain-Invariant Phase Shifter with 5.625° Phase Resolution, 0.19° RMS Phase Error and < 0.56dB RMS Gain Error
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Th2G-6: First Demonstration of MMIC Low-Noise Amplifiers Operating at Ka-Band Realized with Enhancement-Mode Gallium Nitride HEMTs
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Th3A-5: Integration of Millimeter-Wave Air Filled Cavities and Filters Using Vertically Aligned Carbon Nanotubes
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Th3B-3: AlN/GaN MIS-HEMT With GeN Gate Dielectric for mm-Wave Applications
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Th3C-2: Tunable Dual-Band Coaxial Filter with Independent Band Control Using a Single Tuning Element Per Band
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Th3D-3: Characterization Approaches to Reduce Process Variation Dependencies for On-Wafer Power Calibration Transfer Devices in Bi/CMOS Technologies
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Th3F-3: AI-Assisted Template-Seeded Pixelated Design for Multi-Metal-Layer High-Coupling EM Structures: A Ku-Band 6G FR3 PA in 22nm FDX+
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Th3G-3: Broadband LNA with Dual-Resonance Matching Network with Capacitive Feedback for Improved Gain and Noise Figure Using 0.1-µm GaAs pHEMT Technology
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WSG-1: Ku- and Ka-Band Beamformer with Antenna Arrays
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WSM-5: Future of optical and wireline transceiver
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WSL-2: 100–300GHz Power Amplifiers: Transistor Limits, Circuit Topologies
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WSA-5: Design of a Low-Jitter Ring-Oscillator-Based Fractional-N Digital PLL
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WSO-5: High Throughput Manufacturing and Testing of Semiconductor Spin Qubit Quantum Processors
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WSJ-7: A Fully Integrated Power Amplifier Module with Bias Controller to Tackle 5G mMIMO Basestation Applications at 3.5GHz
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WSC-4: AI-Enabled Discovery of New RF/mm-Wave Architectures and Synthesis of End-to-End RFICs
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WSK-4: THz Electronics for Sensing and Communication Applications
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WSQ-4: Automation in the Design Workflow
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WMI-5: Solution of Sparse Matrix Equations Using HHL Algorithm with Quantum Walk Unitary Operator
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WME-7: Advanced Modeling and Synthesis of Consolidated Additively Manufactured Waveguide Filter Assemblies
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Microwave Week 2020 Dashboard

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