Microwave Week 2020 Dashboard

Technical Session Audience Rating IMS

Displaying 1001 - 1050 of 2745
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  • We2E-5: High-Power Handling, Amplitude and Phase Stable, Full Band WR-06 Rotary Joint Based on TE01 Mode
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  • We2G-5: A 220–280GHz InP Frequency Doubler with a Compact, Low-Loss Folded Marchand Balun
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  • We2H-4: A Compact Doubly Neutralized Ku Band Power Amplifier with 39% Peak PAE and 23 dBm Output Power in 22FDX+ EDMOS for 6G FR3
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  • We3B-5: A 71–76GHz Phased-Array Transmitter with Nested-Coupler-Based Phase Shifter in 65nm CMOS
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  • We3C-3: A DC-51.5 GHz Digital Step Attenuator with Sub-5 dB Insertion Loss and 3.1° RMS Phase Error
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  • We3D-3: Frequency-Query Enhanced Electromagnetic Surrogate Modeling with Edge Anti-Aliasing Pixelation for Bandpass Filter Inverse Design
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  • We3G-4: Low-Power and Low-Phase Noise 94-GHz and 107.2-GHz Differential Fundamental Oscillators in 70-nm GaAs pHEMT Technology
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  • We3H-5: A Ka-Band GaN Doherty Power Amplifier with High Efficiency Over a Fractional Bandwidth of 20.4%
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  • IF1-6: USB Type-C Receptacle Connector with Ceramic Insulator and Three-Layer Ground Plates
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  • IF1-12: Detection Algorithm for Waveguide Connection and Probe Contact States Based on Machine Learning in Frequency up to 1.1THz
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  • IF1-19: Accurate Large-Scale Motion Sensing With FMCW Radar Based on Range-Dependent DFT Technique
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  • IF1-23: A 28nm CMOS Almost All-Digital 0.5 to 4.0GHz Ultra-Wideband Ground Penetrating Radar for Lunar Surface Exploration
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  • IF1-28: High Power-Added-Efficiency AlGaN/GaN E-Mode HEMTs for Low-Supply-Voltage RF Terminal Applications
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  • IF1-34: A SiGe J-Band Gilbert Cell-Based Frequency Doubler and Power Amplifier Chain with 10dBm Output Power
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  • IF1-39: Predicting the Fidelity of Multiplexed Superconducting Qubit Readout with Multiphysics Numerical Methods
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  • IF1-45: Direction Finding for Software Defined Radios with Switched Uniform Circular Arrays
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  • Th1A-3: Evaluation of Stacked Structure for 160GHz End-Fire Type Compact Antenna-in-Package Considering Thermal Design
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  • Th1B-2: A Low-Loss, Wideband, 0–110GHz SPDT Using PCM RF Switches with Integrated CMOS Drivers
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  • Th1C-4: Twisted-Shaped Millimeter-Wave Hybrid Couplers in 150nm GaN Technology for 5G Applications
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  • Th1D-4: Dielectric Measurements of Conventional and 3-D Printed Substrate Materials from 50GHz to 1.5THz Using Free-Space and TDS Methods
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  • Th1G-2: DC-to-89-GHz AMUX-based IQ Modulator in 250-nm InP HBT Technology for Multiplexing-DAC Subsystem
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  • Th1G-6: A Bi-Directional 5-Bit 131.5–150.5GHz Digital-Programmable Phase Shifter with 2.1°/0.3dB RMS Phase/Gain Errors in 40nm CMOS
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  • Th2A-5: Thin Film Transmission Lines on Low-k Polymer Films for Sub-THz Applications
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  • Th2B-5: A 36GHz Trilayer AlN/ScAlN/AlN Periodically Poled FBAR
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  • Th2D-1: Traceable S-Parameter Measurements up to 165 GHz using 0.8 mm Coaxial Standards
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  • Th2F-1: KEYNOTE: InP HBT Technologies for Integrated Circuit Development of Efficient mm-Wave and THz Power Amplifiers and Sources
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  • Th2G-1: A Ku-Band CMOS LNA with Symmetric Polarity-Selective Transformer for Efficient 180° Phase Shifting
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  • Th2G-6: First Demonstration of MMIC Low-Noise Amplifiers Operating at Ka-Band Realized with Enhancement-Mode Gallium Nitride HEMTs
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  • Th3A-3: Aerosol Jet Fully 3D Printed RF Attenuator Using Resistive Ink
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  • Th3B-2: On-Wafer Characterization of K-Band to V-Band GaN IMPATT Diodes
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  • Th3B-5: Small- and Large-Signal Characterization of RF Substrates Down to Cryogenic Temperatures
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  • Th3D-2: Integrated Solution for Linear and Non-Linear Single-Touchdown On-Wafer Characterization of D-Band Mixers
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  • Th3F-2: A D-Band InP Power Amplifier Featuring Fully AI-Generated Passive Networks
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  • Th3G-2: An 8–12.2GHz CMOS Low-Noise Amplifier with Partially Tail-Coupled Transformer and Large-Transistor Achieving 1.8dB Average NF
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  • WSD-5: Potential of event-driven continuous-time digital signal processing for ultra-low-power applications
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  • WSG-7: SiGe LNA for SATCOM
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  • WSH-4: Bits to Beams: How do You Simulate a Heterogeneously Packaged, Digitally Steered Phased Array?
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  • WSL-7: Sub-THz SiGe HBT Cascode Power Amplifiers with Capacitive Feedback and its Use in a Supply Modulated RF Transmitter Front-End
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  • WSI-6: Antenna Interfaces with Built-In Self-Interference Cancellation for Future Communication and Sensing Systems
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  • WSN-2: RF Hardware for Large-Scale Superconducting Quantum Computing
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  • WSF-2: mm-Wave and Sub-THz CMOS Front-Ends for 6G
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  • WSB-1: Integrating Sensing Functionality in Mobile Communication Networks
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  • WSK-8: Non-Contact On-Wafer Probing for mm-Wave and THz Metrology
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  • WSQ-7: Harnessing AI for Unlocking Novel RF Designs with Enhanced Performances
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  • WMI-7: Deep Microscopic Quantum Solvers for Spin Qubits Coupled to Complex Electromagnetic Environments
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  • WMG-3: Deep Traps in GaN-on-Silicon HEMT Devices and their Effects on RF Performance
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  • WML-7: Fast Multipole Method and its Applications
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  • WMK-3: The Role and Challenges of Ultra-Wide Bandgap Semiconductors in Next-Generation GaN HEMTs
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  • WMM-4: In-Band Full-Duplex Phased Array Circuits and Systems
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  • WMF-3: Transferring On-Wafer Traceability to Industrial Lumped-Element Calibrations
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