Microwave Week 2020 Dashboard

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Displaying 1051 - 1100 of 2759

Tu2F-2: High-Power Quasi-Vertical GaN Schottky Barrier Diode RF Rectifier Based on Impedance Compression Network for WPT Applications
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Tu3A-2: Advanced Immunoassay Detection Using Microwave Whispering Gallery Mode Resonators
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Tu3B-1: 150GHz-Band Compact Phased-Array AiP Module for XR Applications toward 6G
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Tu3B-2: A 28GHz Beamformer Element Demonstration Using Monolithically Integrated GaN and Si Transistors in 300mm GaN-on-Si Technology
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Tu3D-1: A 4–240-GHz InP Variable-Gain Amplifier Using an Analog-Controlled Input Attenuation Network
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Tu3E-3: Simple Analog Pre-Distorter Design with Controllable AM/AM and AM/PM Distortion
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Tu3F-5: AoA Sensing Enabled Reconfigurable Intelligent Surface
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Tu4A-5: Moving Person Vital Sign Detection Using Four-Channel Phase- and Quadrature Self-Injection-Locked Radar and MPCA Method for Dynamic Clutter Immunity
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Tu4B-6: Low Power Consumption and Beam-Sustainable Reconfigurable Intelligent Surface for Fixed Wireless Communication at Millimeter-Wave 5G Band
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Tu4C-6: Highly-Efficient and Low-Power Class-E Amplifier for Miniaturization Using a Small Antenna
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Tu4E-2: Predistortion of GaN Power Amplifier Transient Responses in Time-Division Duplex Using Machine Learning
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Tu4F-3: A Heterogeneous Transceiver in 0.1µm D-Mode GaAs and 65nm CMOS for SATCOM Phased Arrays
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We1B-4: A 9.4–11.4GHz Low-IF Linear Transmitter Front-End with 47.2dB Dynamic Range and 0.5dB Gain Resolution in 40-nm CMOS
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We1C-4: Miniaturized Multilayer and Self-Packaged Triple-Mode Bandpass Filter with High Selectivity and Wide Stopband
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We1E-2: Novel Double Rejection Cavity to Improve Selectivity in Inline Rectangular Waveguide Filters
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We1G-3: A 14.5Gb/s, 2.75pJ/bit, Direct-Digital, Star-QAM Modulator and Co-Designed Frequency Multiplier Operating at 140GHz
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We1H-3: A Continuous-Mode Class-F-1 X-Band GaN MMIC Power Amplifier with a 29.7% Fractional Bandwidth
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We2B-3: A 28GHz Compact Phased-Array Beamformer with 21.3dBm PSAT and 5.2dB Noise Figure in 40nm CMOS
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We2C-2: Novel Synthesis Method for Wideband Filter with Additional Insertion Phase
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We2D-5: Mixed-Mode Distributed Physical-Based Model on OSFP Connector for Fast PAM-4 Channel Analysis and Pathfinding up to 212.5Gbps
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We2E-6: Optimizing Material and Shape of 3D-Printed Waveguide Terminations
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We2H-1: Efficient InGaP/GaAs HBT Differential Power Amplifier Using a New Adaptive Cross-Capacitor Bias Circuit for 6G FR3 Handset Applications
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We2H-5: A 24GHz Power Amplifier with a Switching Output Combiner for a Dual-Mode MIMO Radar System
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We3B-5: A 71–76GHz Phased-Array Transmitter with Nested-Coupler-Based Phase Shifter in 65nm CMOS
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We3C-4: A 10-17 GHz Continuously Tunable CMOS Filter with FlexibleBandwidth Control Based on Mode-Switching Inductors
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We3D-5: Knowledge-based Extrapolation of Neural Network Model for Transistor Modeling
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We3G-5: A 134GHz High Efficiency High Power Fundamental Oscillator in 16nm p-FinFET with 12dBm Output Power and 6.5% DC-to-RF Efficiency
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IF1-2: GaN-Based Power Amplification Unit for the Europa Clipper Mission
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IF1-7: A TSPC mm-Wave Frequency Divider with up to 50GHz Input Frequency in 12nm FinFET Bulk CMOS
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IF1-14: New Coaxial Interconnection — Application to Wilkinson Dividers/Combiners
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IF1-20: A THz Attenuator Based on Voltage-Tunable Whispering Gallery Mode Resonator
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IF1-24: Parallel Differential-Line Fed Planar Aperture Antenna-in-Package with Signal Lines Isolated from IC in 300-GHz Band
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IF1-29: GaN Trap Model Extraction Based on MHz Load-Line Measurements
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IF1-35: An Effective Basis Function Generation Structure for Digital Pre-Distortion in Wideband Scenarios
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IF1-41: Enhancing Long-Range Battery-Free Communication: A Passive Lens-Enabled Broadbeam Harmonic mmID for Emerging IoT Systems
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IF1-47: A Body-Floating G-Band Frequency Doubler for Astronomical Receiver in 90-nm CMOS Process
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Th1A-3: Evaluation of Stacked Structure for 160GHz End-Fire Type Compact Antenna-in-Package Considering Thermal Design
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Th1B-3: A Millimeter Wave Analog-Digital Variable Capacitor with High Tuning Ratio Realized by Monolithic Integration of BST Varactors and GeTe Switches
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Th1C-5: A 150-GHz Butler Matrix in Quartz-IPD Technology
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Th1D-6: A Radio-Frequency Microfluidic Dielectric Sensor Based on Coupled Stepped-Impedance Resonators
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Th1G-2: DC-to-89-GHz AMUX-based IQ Modulator in 250-nm InP HBT Technology for Multiplexing-DAC Subsystem
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Th1G-5: A 0.9pJ/Bit 56Gb/s High-Swing Tri-Mode Wireline Transmitter with 6-Bit DAC Controlled Tailless-CML Driver and Impedance Calibration Loop
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Th2A-4: First Demonstration of Highly Scaled RF GaN-on-Si Dielets Embedded in Glass Interposer
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Th2B-4: Miniature High-Coupling Lithium Niobate Thin Film Bulk Acoustic Wave Resonators at 10–30GHz
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Th2C-5: A Novel Multi-Functional Filtering Amplitude/Phase Circuit with Tunable Frequency Using Simple Phase Control Network
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Th2D-4: Cross-Spectrum Phase Noise Measurements of 10-15-Level Stability Photonic Microwave Oscillators
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Th2G-1: A Ku-Band CMOS LNA with Symmetric Polarity-Selective Transformer for Efficient 180° Phase Shifting
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Th2G-6: First Demonstration of MMIC Low-Noise Amplifiers Operating at Ka-Band Realized with Enhancement-Mode Gallium Nitride HEMTs
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Th3A-2: A Reconfigurable Dielectric-Loaded Millimeter-Wave Waveguide Bandpass Filter Based on Customized 3D-Printing Vanadium Dioxide Filament
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Th3B-2: On-Wafer Characterization of K-Band to V-Band GaN IMPATT Diodes
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Microwave Week 2020 Dashboard

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