Microwave Week 2020 Dashboard

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Technical Session Audience Rating IMS

Displaying 901 - 950 of 2745
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  • We1B-1: KEYNOTE: A MIMO Perspective of Phased Arrays and its Applications
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  • We1B-6: A 10-GHz Localized-LO-Phase-Shifting Phased-Array Transmitter
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  • We1D-5: A Finite Element Method to Model Transmission Lines with Various Rough Conductor Surfaces up to 110GHz
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  • We1E-5: Band-Pass Filter Based on Stacked Metal Plates in V-Band Waveguide Technology
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  • We1H-1: KEYNOTE: LNA and Power Amplifiers for Operation up to 100GHz
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  • We2B-2: A 28/39-GHz Reconfigurable Phased-Array Transmitter Front-End for 5G New Radio in a 65nm CMOS
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  • We2B-5: Calibration of Vector-Summing Type Variable-Gain Phase Shifters Using Novel Rectangular Constellation Modeling
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  • We2D-2: Green’s Function Analysis of Spatially Discrete Traveling-Wave Modulated (Parametric) Loop Networks
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  • We2E-2: Novel Radial Combiners with Integrated Low Pass Filtering Function
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  • We2G-4: A 100–180-GHz InP Distributed Frequency Doubler with 11.5dBm Peak Output Power Using a Power-Bandwidth Enhancement Technique
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  • We2H-3: A 9-to-13.5GHz 29.2-dBm-PSAT 44.4%-PAE Power Amplifier Using Extended Cascode Cores and 4-to-1 Folded Transformers in 130-nm CMOS SOI
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  • We3B-4: A D-Band Front-End T/R MMIC in a 70-nm GaN HEMT Technology
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  • We3C-1: A Highly Linear 4W Differential SOI-CMOS RF Switch
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  • We3D-2: A Simple Closed-Form CAD Approach for Sensitivity Analysis and Optimization of Passive Networks Against Load Variations
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  • We3G-3: A 60GHz Super Harmonic Injection Locked Oscillator with Quadrature Outputs
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  • We3H-4: A Sub-6GHz Ultra-Compact 69.8% Drain Efficiency Harmonic Control Doherty Power Amplifier in GaN Technology
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  • IF1-5: Metasurface Design for RCS Reduction Applications
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  • IF1-11: Tensor Train Optimization for Polynomial Chaos for High Dimensional Uncertainty Quantification
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  • IF1-18: A High-Efficiency Outphasing Power Amplifier Utilizing a Synthesized Direct-Matching Technique Based on Two-Section Branch-Line Coupler Output Combiner
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  • IF1-22: Ultra-Wideband 6-Bit Passive Phase Shifter with Open-Circuit Microstrip Pseudo-π Network and Low RMS Phase Error
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  • IF1-28: High Power-Added-Efficiency AlGaN/GaN E-Mode HEMTs for Low-Supply-Voltage RF Terminal Applications
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  • IF1-32: S-Parameter-Based Simulation Technique and Crosstalk Suppression for Large-Scale Superconducting Quantum-Computing Chip Design
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  • IF1-38: Fast-Switchable 3.6GHz GaN Doherty Power Amplifier for Energy-Efficient Non-Continuous Transmission of 256-QAM Signals
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  • IF1-44: A 30-mW D-Band High-Sensitivity Self-Injection-Locked Radar Sensor with Integrated SIW Antenna in 70-nm GaAs pHEMT Technology
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  • Th1A-2: Empty-SIW (eSIW) Based Beamformer System on Glass Package for G-Band Phased Array Applications
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  • Th1B-1: Edge Coupled DC–60GHz Different SPDT MEMS Switch for High-Speed Digital Applications
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  • Th1C-2: A Compact Millimeter-Wave Phase Shifter Integrated Variable Coupler in SIW Technology for Beam-Forming Applications
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  • Th1D-3: Temperature and Humidity Effects on Electromagnetic Waves Utilizing 140GHz Radar Measurements
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  • Th1F-3: A Compact Wideband Low-Loss On-Chip Power Combiner for High-Efficiency GaN mm-Wave Power Amplifiers
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  • Th1G-4: A >22GS/s, 44dB SNDR Wideband 4×4 Time-Interleaved Sampling Front-End with Bulk-Driven Mismatch Calibration in 22nm FDSOI
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  • Th2A-2: 3DGS 3D Heterogeneous Integrated RF Multi-Layers Glass-Interposer System-in-Package
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  • Th2B-2: Low-Loss Longitudinal Leaky SAW Filter with 1350MHz Bandwidth on LiNbO₃/SiO₂/SiC Platform for Wi-Fi 7
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  • Th2C-2: A Miniaturized Marchand Balun-Based Broadband Vector Sum Phase Shifter with 0.49° RMS Phase Error
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  • Th2D-3: A Wideband Digital Compensation Model Based on Fast Bandwidth Sensing for Zero-IF Receiver
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  • Th2F-3: 300GHz 8×1 Active Phased Array MMIC with On-Chip Power Amplifiers, Vector Modulators, and Antennas
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  • Th2G-4: A 71–86-GHz Receiver with 5-GHz IF Signal Bandwidth for E-Band Broadband Communication in 65-nm CMOS
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  • Th3A-2: A Reconfigurable Dielectric-Loaded Millimeter-Wave Waveguide Bandpass Filter Based on Customized 3D-Printing Vanadium Dioxide Filament
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  • Th3A-2: A Reconfigurable Dielectric-Loaded Millimeter-Wave Waveguide Bandpass Filter Based on Customized 3D-Printing Vanadium Dioxide Filament
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  • Th3B-1: Deep Level Effects and Hot-Electron Reliability in Scaled GaN HEMTs
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  • Th3B-4: Influence of Double-Deck T-Gate Structures on Cut-Off Frequency in Al0.3Ga0.7N/AlN/GaN HEMTs
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  • Th3C-5: An Electrical Balance Duplexer Architecture without Inherent Insertion Loss Limitation
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  • Th3F-1: Algorithmic Design of Nonintuitive On-Chip Multilayered Passive Networks
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  • Th3G-1: A C/X-Band LNA Leveraging a Voltage-Tapered Gain-Cell Stacking Technique for 6G and IR-UWB
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  • WSD-2: FD-SOI: game changer in the IoT arena
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  • WSG-3: SiGe BiCMOS Process for SATCOM Applications
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  • WSH-1: The Defense Advanced Research Projects Agency’s (DARPA) Next Generation Microelectronics Manufacturing (NGMM) Program
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  • WSL-5: Design Methodology for Sub-THz Power Amplifier and its Application to 6G D-Band in Advanced CMOS and BiCMOS Technologies
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  • WSI-3: Integrated Self-Interference Cancellers at RF for Communication and Radar
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  • WSO-10: Engineering Quantum Computers for the FTQC Era: A Little About a Lot!
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  • WSJ-6: How to Ensure Flexible and Efficient Use of Spectrum, from Advanced 5G Doherty Power Amplifiers to Digitally Assisted Wideband PA for 6G BTS
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