Microwave Week 2020 Dashboard

Technical Session Audience Rating IMS

Displaying 751 - 800 of 2759
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  • Th2B-3: Frequency and Bandwidth Design of Millimeter Wave Thin-Film Lithium Niobate Acoustic Filters
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  • Th2C-3: Novel Reflective-Type Bandpass Filter with Simultaneously Integrated Tunable Attenuation and Phase Shifting Functions
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  • Th2D-3: A Wideband Digital Compensation Model Based on Fast Bandwidth Sensing for Zero-IF Receiver
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  • Th2F-4: 208GHz InP Distributed Amplifier with Combining Loss Reduction Techniques
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  • Th2G-4: A 71–86-GHz Receiver with 5-GHz IF Signal Bandwidth for E-Band Broadband Communication in 65-nm CMOS
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  • Th3A-2: A Reconfigurable Dielectric-Loaded Millimeter-Wave Waveguide Bandpass Filter Based on Customized 3D-Printing Vanadium Dioxide Filament
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  • Th3B-1: Deep Level Effects and Hot-Electron Reliability in Scaled GaN HEMTs
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  • Th3B-3: AlN/GaN MIS-HEMT With GeN Gate Dielectric for mm-Wave Applications
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  • Th3C-4: Spin Wave Fast Tunable (SWiFT) Filter
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  • Th3D-4: Differential-Mode Characterization of Multi-Port Passives up to 170GHz Using Independent Single-Ended Two-Port Measurements
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  • Th3F-4: Dall-EM: Generative AI with Diffusion Models for New Design Space Discovery and Target-to-Electromagnetic Structure Synthesis
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  • Th3G-3: Broadband LNA with Dual-Resonance Matching Network with Capacitive Feedback for Improved Gain and Noise Figure Using 0.1-µm GaAs pHEMT Technology
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  • WSD-1: Leading-edge Process Technologies for Efficient Low-power Systems
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  • WSG-3: SiGe BiCMOS Process for SATCOM Applications
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  • WSH-1: Packaging: Then, Now and in the Future
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  • WSL-5: Design Methodology for Sub-THz Power Amplifier and its Application to 6G D-Band in Advanced CMOS and BiCMOS Technologies
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  • WSI-2: Transceiver Techniques for FDD and Full-Duplex Wireless
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  • WSO-7: FDSOI Platform for Quantum Computing
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  • WSN-3: High-Density RF Solutions for Scaled Quantum Computing
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  • WSF-3: Challenging CMOS with Beamforming in the D-Band
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  • WSB-2: Integrated Beamforming: Where Directional Communication Meets Sensing for Seamless Connectivity and Detection
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  • WSK-9: On-Wafer Measurement of Planar Circuits at mm-Wave and Sub-THz Frequencies
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  • WSQ-7: Harnessing AI for Unlocking Novel RF Designs with Enhanced Performances
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  • WMI-7: Deep Microscopic Quantum Solvers for Spin Qubits Coupled to Complex Electromagnetic Environments
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  • WMG-4: Challenges and Opportunities of GaN-on-Si from a Foundry Perspective
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  • WML-8: Adaptive Integral Method and Other FFT-Based Fast Algorithms
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  • WMK-4: AlN-Based RF Devices
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  • WMM-4: In-Band Full-Duplex Phased Array Circuits and Systems
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  • WMF-3: Transferring On-Wafer Traceability to Industrial Lumped-Element Calibrations
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  • WMJ-3: RF/Microwave Wearable Devices for Body Armor and Personal Protective Equipment
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  • WMN-3: 3D Modeling and Advanced Manufacturing of Conformal RF Packaging and Metasurface Antennas
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  • WMO-3: Considerations for Accurate Respiratory Displacement Signature Measurement in Physiological Radar
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  • RFB1-3: RFMW Communications, Quantum Design and Matching Basics
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  • WMP-4: System Simulation and Modeling for Broadband Applications
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  • Tu1A-2: A D-Band 1Tx 4Rx Mid-Range Automotive CMOS FMCW Radar
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  • Tu1B-1: Double HOOK: A 140 GHz 15 Gb/s Reconfigurable 3-Level ASK Modulator with Constant Input Impedance for High-Speed Connectivity
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  • Tu1C-1: Field Trial of a Coastal Surveillance System Exploiting a Multistatic Multiband Photonics-Based Radar in Coherent Sparse MIMO Configuration
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  • Tu1D-3: A 90W High-Efficiency Four-Way Doherty Power Amplifier with 37.8% Fractional Bandwidth Over a 15dB Power Back-Off Range
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  • Tu1E-4: A Photonic Link at 4.7K with >1GHz Bandwidth Towards an Optical Quantum Computing Interface
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  • Tu1F-4: Power Receiving Circuit Design of Single-Ended Biological Capacitive WPT for Artificial Retina System
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  • Tu2A-6: Repeater-Aided Millimeter-Wave MIMO Radar for Improved Detection of Specular Targets
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  • Tu2C-3: An Ultra-Low-Noise 600–700GHz Heterodyne Terahertz Receiver for Ground-Based Astronomy Observations
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  • Tu2D-2: An Integrated Doherty Power Amplifier Module Based on an Advanced GaN-on-Si HEMT Technology and a Wideband Power Combiner
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  • Tu2E-2: DeltaDPD: Exploiting Dynamic Temporal Sparsity in Recurrent Neural Networks for Energy-Efficient Wideband Digital Predistortion
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  • Tu2F-1: A Differential Rectifier Design Based on Impedance Splitting and Compression Technique for Achieving > 70% ηRF-DC Over 13dBm Input Dynamic Power Range
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  • Tu3A-1: Passive Subcutaneous Microwave Thermometry with Spatial Pattern Diversity
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  • Tu3B-1: 150GHz-Band Compact Phased-Array AiP Module for XR Applications toward 6G
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  • Tu3B-2: A 28GHz Beamformer Element Demonstration Using Monolithically Integrated GaN and Si Transistors in 300mm GaN-on-Si Technology
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  • Tu3D-1: A 4–240-GHz InP Variable-Gain Amplifier Using an Analog-Controlled Input Attenuation Network
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  • Tu3E-2: An Integrable Analog Domain Linearization Architecture for the Power Amplifiers in MIMO Systems
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