Microwave Week 2020 Dashboard

Technical Session Audience Rating IMS

Displaying 551 - 600 of 2759
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  • We1B-4: A 9.4–11.4GHz Low-IF Linear Transmitter Front-End with 47.2dB Dynamic Range and 0.5dB Gain Resolution in 40-nm CMOS
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  • We1C-3: A New Folded Coupling Reflectionless Bandpass Filter with Broadband Ultra-Low Reflection Property and Very High Frequency Selectivity
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  • We1E-2: Novel Double Rejection Cavity to Improve Selectivity in Inline Rectangular Waveguide Filters
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  • We1G-2: A 22–34GHz CMOS Neutralization-Based Direct-Conversion I/Q Up-Converter for 1024-QAM Modulation
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  • We1H-3: A Continuous-Mode Class-F-1 X-Band GaN MMIC Power Amplifier with a 29.7% Fractional Bandwidth
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  • We2B-3: A 28GHz Compact Phased-Array Beamformer with 21.3dBm PSAT and 5.2dB Noise Figure in 40nm CMOS
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  • We2C-2: Novel Synthesis Method for Wideband Filter with Additional Insertion Phase
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  • We2D-5: Mixed-Mode Distributed Physical-Based Model on OSFP Connector for Fast PAM-4 Channel Analysis and Pathfinding up to 212.5Gbps
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  • We2E-6: Optimizing Material and Shape of 3D-Printed Waveguide Terminations
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  • We2H-1: Efficient InGaP/GaAs HBT Differential Power Amplifier Using a New Adaptive Cross-Capacitor Bias Circuit for 6G FR3 Handset Applications
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  • We2H-5: A 24GHz Power Amplifier with a Switching Output Combiner for a Dual-Mode MIMO Radar System
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  • We3B-5: A 71–76GHz Phased-Array Transmitter with Nested-Coupler-Based Phase Shifter in 65nm CMOS
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  • We3C-4: A 10-17 GHz Continuously Tunable CMOS Filter with FlexibleBandwidth Control Based on Mode-Switching Inductors
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  • We3D-5: Knowledge-based Extrapolation of Neural Network Model for Transistor Modeling
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  • We3G-5: A 134GHz High Efficiency High Power Fundamental Oscillator in 16nm p-FinFET with 12dBm Output Power and 6.5% DC-to-RF Efficiency
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  • IF1-2: GaN-Based Power Amplification Unit for the Europa Clipper Mission
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  • IF1-7: A TSPC mm-Wave Frequency Divider with up to 50GHz Input Frequency in 12nm FinFET Bulk CMOS
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  • IF1-14: New Coaxial Interconnection — Application to Wilkinson Dividers/Combiners
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  • IF1-20: A THz Attenuator Based on Voltage-Tunable Whispering Gallery Mode Resonator
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  • IF1-24: Parallel Differential-Line Fed Planar Aperture Antenna-in-Package with Signal Lines Isolated from IC in 300-GHz Band
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  • IF1-29: GaN Trap Model Extraction Based on MHz Load-Line Measurements
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  • IF1-35: An Effective Basis Function Generation Structure for Digital Pre-Distortion in Wideband Scenarios
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  • IF1-40: TCN-DPD: Parameter-Efficient Temporal Convolutional Networks for Wideband Digital Predistortion
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  • IF1-47: A Body-Floating G-Band Frequency Doubler for Astronomical Receiver in 90-nm CMOS Process
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  • Th1A-3: Evaluation of Stacked Structure for 160GHz End-Fire Type Compact Antenna-in-Package Considering Thermal Design
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  • Th1B-3: A Millimeter Wave Analog-Digital Variable Capacitor with High Tuning Ratio Realized by Monolithic Integration of BST Varactors and GeTe Switches
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  • Th1C-5: A 150-GHz Butler Matrix in Quartz-IPD Technology
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  • Th1D-5: A Novel Q-Choked Sapphire Sandwiched Resonator for Wide-Band Measurements of Flat Dielectric Samples
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  • Th1G-2: DC-to-89-GHz AMUX-based IQ Modulator in 250-nm InP HBT Technology for Multiplexing-DAC Subsystem
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  • Th1G-5: A 0.9pJ/Bit 56Gb/s High-Swing Tri-Mode Wireline Transmitter with 6-Bit DAC Controlled Tailless-CML Driver and Impedance Calibration Loop
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  • Th2A-4: First Demonstration of Highly Scaled RF GaN-on-Si Dielets Embedded in Glass Interposer
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  • Th2B-4: Miniature High-Coupling Lithium Niobate Thin Film Bulk Acoustic Wave Resonators at 10–30GHz
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  • Th2C-5: A Novel Multi-Functional Filtering Amplitude/Phase Circuit with Tunable Frequency Using Simple Phase Control Network
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  • Th2D-4: Cross-Spectrum Phase Noise Measurements of 10-15-Level Stability Photonic Microwave Oscillators
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  • Th2F-5: A Broadband InP Darlington Amplifier with Two-Way Distributed Power Combining
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  • Th2G-5: A 6.5-GHz Low-Power Self-Interference Cancellation Receiver with Two-Stage Feedforward Technique and Automatic Gain Control Loop
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  • Th3A-2: A Reconfigurable Dielectric-Loaded Millimeter-Wave Waveguide Bandpass Filter Based on Customized 3D-Printing Vanadium Dioxide Filament
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  • Th3B-2: On-Wafer Characterization of K-Band to V-Band GaN IMPATT Diodes
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  • Th3B-4: Influence of Double-Deck T-Gate Structures on Cut-Off Frequency in Al0.3Ga0.7N/AlN/GaN HEMTs
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  • Th3D-1: KEYNOTE: Past, Present and Future Challenges of Testing RFIC Industry
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  • Th3F-1: Algorithmic Design of Nonintuitive On-Chip Multilayered Passive Networks
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  • Th3G-1: A C/X-Band LNA Leveraging a Voltage-Tapered Gain-Cell Stacking Technique for 6G and IR-UWB
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  • WSD-6: Next-Gen End-Point Radios down to sub-µW – Enabling Ubiquitous and Friction-Less Immersion in Existing Wireless Environments
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  • WSG-7: SiGe LNA for SATCOM
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  • WSH-5: Waferscale RF Silicon Interposer Packaging Technology for mm-Wave Phased Arrays and Radars
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  • WSL-7: Sub-THz SiGe HBT Cascode Power Amplifiers with Capacitive Feedback and its Use in a Supply Modulated RF Transmitter Front-End
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  • WSI-7: Opportunities and Challenges on the Next Generation Concurrent Reconfigurable Multi-Radio IoT Devices
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  • WSJ-3: Understanding the Harmonic Balance Simulation Technique for use in the Waveform Engineering of Advanced GaN Power Amplifiers
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  • WSF-7: Mixed-Signal RFIC in SiGe:C BiCMOS for mm-Wave Antenna-in-Package and Antenna-in-Module Solutions
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  • WSB-7: Adaptive mm-Wave MIMO Front-Ends for Energy-Efficient Sensing
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