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Technical Session Audience Rating IMS

Displaying 451 - 500 of 2759
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  • Tu2E-1: An Embedded-Structured Convolutional Neural Network for Efficient RF Device Behavior Model Extraction
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  • Tu2E-5: Calibration of Wideband Multiport Junction Receivers Using Memory-Polynomial-Informed Neural Network
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  • Tu2F-4: 27-GHz Silicon-Integrated Rectenna Based on Novel Multilayer Substrate
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  • Tu3A-5: Resonance Frequency Retuning System for Flexible MRI Coils
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  • Tu3B-2: A 28GHz Beamformer Element Demonstration Using Monolithically Integrated GaN and Si Transistors in 300mm GaN-on-Si Technology
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  • Tu3B-5: Dual-Band Near-Field Probing Antenna for Enhancing the Performance of Dual-Band Shared-Aperture Linear-Polarized Phased Antenna Arrays
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  • Tu3D-4: 300-GHz-Band Single-Balanced Resistive Mixer Module in 60-nm InP HEMT Technology with LO Leakage Suppressing Function
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  • Tu3F-2: A Self-Sustaining Regenerative Amplifier Sensor Using Perfect Metamaterial Absorber for Liquid Concentration Prediction
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  • Tu4A-3: Accurate Doppler Cardiogram Sensing with Frequency-Domain Digital Beamforming Technique Based on a K-Band Biomedical Radar
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  • Tu4B-3: Chirp Sequence-Based Beamwidth Control in a Reconfigurable Intelligent Surface
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  • Tu4C-3: Continuous Current Mode Class-F Power Amplifier: A Solution for Bandwidth Extension in Low Breakdown Voltage Applications
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  • Tu4D-3: A Compact 8.2mW Complementary Current-Reusing D-Band Frequency Quadrupler in 22nm FDSOI CMOS
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  • Tu4F-2: Simultaneous Multibeam Operation in 19.5GHz SATCOM Receive Phased Arrays Using Orthogonally-Coded Nested Subarrays
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  • We1B-2: A 1.53-mm² Fully-Integrated Wi-Fi 7 Front-End Module with 1.65-dB NF and 41.9% FBW in 0.25-µm GaAs p-HEMT Technology
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  • We1C-1: Multi-functional Ultrawideband BPFs with Reconfigurable Absorptive and Tunable Attenuation Characteristics
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  • We1D-5: A Finite Element Method to Model Transmission Lines with Various Rough Conductor Surfaces up to 110GHz
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  • We1E-6: Ultra-Compact Surface-Mountable Air-Filled Coaxial Filter for 5G Applications
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  • We1H-2: A Ku-Band Input Harmonically Tuned Class-F GaAs MMIC Power Amplifier Achieving 28.4-dBm Psat and 56% Peak PAE
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  • We2B-2: A 28/39-GHz Reconfigurable Phased-Array Transmitter Front-End for 5G New Radio in a 65nm CMOS
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  • We2B-5: Calibration of Vector-Summing Type Variable-Gain Phase Shifters Using Novel Rectangular Constellation Modeling
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  • We2D-3: Equation-Based Solver for High-Performance SI CuMax Routing Within Pin Fields
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  • We2E-3: A Multi-Functional Circularly Polarized All Pole Filtering Conical Horn Antenna
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  • We2G-4: A 100–180-GHz InP Distributed Frequency Doubler with 11.5dBm Peak Output Power Using a Power-Bandwidth Enhancement Technique
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  • We2H-4: A Compact Doubly Neutralized Ku Band Power Amplifier with 39% Peak PAE and 23 dBm Output Power in 22FDX+ EDMOS for 6G FR3
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  • We3B-4: A D-Band Front-End T/R MMIC in a 70-nm GaN HEMT Technology
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  • We3C-2: Miniaturized D-Band SPDT/DPDT Switches Using Series Triple Coupled Transformer Cores in 65-nm CMOS SOI
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  • We3D-3: Frequency-Query Enhanced Electromagnetic Surrogate Modeling with Edge Anti-Aliasing Pixelation for Bandpass Filter Inverse Design
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  • We3G-3: A 60GHz Super Harmonic Injection Locked Oscillator with Quadrature Outputs
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  • We3H-4: A Sub-6GHz Ultra-Compact 69.8% Drain Efficiency Harmonic Control Doherty Power Amplifier in GaN Technology
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  • IF1-5: Metasurface Design for RCS Reduction Applications
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  • IF1-12: Detection Algorithm for Waveguide Connection and Probe Contact States Based on Machine Learning in Frequency up to 1.1THz
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  • IF1-18: A High-Efficiency Outphasing Power Amplifier Utilizing a Synthesized Direct-Matching Technique Based on Two-Section Branch-Line Coupler Output Combiner
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  • IF1-22: Ultra-Wideband 6-Bit Passive Phase Shifter with Open-Circuit Microstrip Pseudo-π Network and Low RMS Phase Error
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  • IF1-28: High Power-Added-Efficiency AlGaN/GaN E-Mode HEMTs for Low-Supply-Voltage RF Terminal Applications
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  • IF1-33: High-Efficiency Low-Complexity ASK Transmitter Using an Inverse Class-F Power Amplifier with a Nonuniform Transmission-Line-Based Load Transformation Network
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  • IF1-38: Fast-Switchable 3.6GHz GaN Doherty Power Amplifier for Energy-Efficient Non-Continuous Transmission of 256-QAM Signals
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  • IF1-44: A 30-mW D-Band High-Sensitivity Self-Injection-Locked Radar Sensor with Integrated SIW Antenna in 70-nm GaAs pHEMT Technology
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  • Th1A-2: Empty-SIW (eSIW) Based Beamformer System on Glass Package for G-Band Phased Array Applications
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  • Th1B-2: A Low-Loss, Wideband, 0–110GHz SPDT Using PCM RF Switches with Integrated CMOS Drivers
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  • Th1C-2: A Compact Millimeter-Wave Phase Shifter Integrated Variable Coupler in SIW Technology for Beam-Forming Applications
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  • Th1D-4: Dielectric Measurements of Conventional and 3-D Printed Substrate Materials from 50GHz to 1.5THz Using Free-Space and TDS Methods
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  • Th1F-4: A 16-Way 115–129GHz High Power Amplifier with 20.9dBm PSAT and 17.6dBm P1dB in 40nm Bulk CMOS
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  • Th1G-4: A >22GS/s, 44dB SNDR Wideband 4×4 Time-Interleaved Sampling Front-End with Bulk-Driven Mismatch Calibration in 22nm FDSOI
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  • Th2A-2: 3DGS 3D Heterogeneous Integrated RF Multi-Layers Glass-Interposer System-in-Package
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  • Th2B-3: Frequency and Bandwidth Design of Millimeter Wave Thin-Film Lithium Niobate Acoustic Filters
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  • Th2C-3: Novel Reflective-Type Bandpass Filter with Simultaneously Integrated Tunable Attenuation and Phase Shifting Functions
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  • Th2D-3: A Wideband Digital Compensation Model Based on Fast Bandwidth Sensing for Zero-IF Receiver
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  • Th2F-3: 300GHz 8×1 Active Phased Array MMIC with On-Chip Power Amplifiers, Vector Modulators, and Antennas
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  • Th2G-4: A 71–86-GHz Receiver with 5-GHz IF Signal Bandwidth for E-Band Broadband Communication in 65-nm CMOS
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  • Th3A-2: A Reconfigurable Dielectric-Loaded Millimeter-Wave Waveguide Bandpass Filter Based on Customized 3D-Printing Vanadium Dioxide Filament
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