Microwave Week 2020 Dashboard

Technical Session Audience Rating IMS

Displaying 651 - 700 of 2759
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  • IF1-3: Dielectric Filled Waveguide Antenna for Air-Borne Application
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  • IF1-9: Electromagnetically Induced Transparency Based Metamaterials Integrated with Plasma Cells for High Power Microwave Protection
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  • IF1-16: RPRS: Real-Time Privacy mm-Wave Radar Sensing System
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  • IF1-20: A THz Attenuator Based on Voltage-Tunable Whispering Gallery Mode Resonator
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  • IF1-27: Quantum Method for Solving S-Parameters of Lossless Waveguides Based on the HHL Method and Finite-Element-Method
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  • IF1-31: Analysis of High-Efficiency Power Amplifiers Exploiting Input Harmonics and Nonlinear I-V Knee Characteristics
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  • IF1-36: Multi-Functional Modulated Surface Based on M-Type Ferrite for mmWave Application
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  • IF1-43: A Compact Brick-Type 40GHz-Band DBF Transmit Antenna Module Using Direct Digital RF Technology
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  • Th1A-1: A D-Band Tx FOWLP Module with Silicon-Based Resonator Antenna Array
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  • Th1A-4: A Wideband W-Band Slotted Over-Mode Cavity Array with Dumbbell-Shaped Holey-EBG Units Based on Metallic Silicon-Based Process
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  • Th1B-5: A Microwave Acoustic QPSK Modulator Leveraging Poled Ferroelectrics
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  • Th1D-2: A Microwave Plasma Jet Array Based on SIW-Enabled Evanescent-Mode Cavity Resonator Technology
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  • Th1F-2: E-Band Power Amplifier with 32.2dBm Psat, 31.3dBm OP1dB Utilizing Commercial 0.10-µm GaAs pHEMT Technology
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  • Th1G-3: A 132GHz SiGe BiCMOS Sampler for Linear Front-Ends
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  • Th2A-1: Novel Low-Loss Shielded Interconnects for D-band/sub-THz Applications Using Microscale Metal Printing Technologies
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  • Th2B-1: KEYNOTE: The Unexpected Technology Race Between Surface (SAW) and Bulk (BAW) Acoustic Wave Filters in Today’s Cell Phones
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  • Th2C-1: A Reconfigurable Filtering Circulator/Isolator with Continuously Controllable Center Frequency and Insertion Phase
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  • Th2D-2: Millimeter-Wave Wideband Active Load-Pull System Using Vector Network Analyzer Frequency Extenders
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  • Th2F-2: 300-GHz-Band InP HBT Power Amplifier Module Enabling 280-Gbps 0-dBm Signal Generation with Digital Predistortion
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  • Th2G-2: A 130GHz 360° Gain-Invariant Phase Shifter with 5.625° Phase Resolution, 0.19° RMS Phase Error and < 0.56dB RMS Gain Error
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  • Th2G-6: First Demonstration of MMIC Low-Noise Amplifiers Operating at Ka-Band Realized with Enhancement-Mode Gallium Nitride HEMTs
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  • Th3A-4: An Agile Additively Manufactured 5G/mm-Wave RF Front-End with Multi-Layer Conformality and Printed RF VIAs for Ultra-Wideband and Miniaturized Systems
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  • Th3B-3: AlN/GaN MIS-HEMT With GeN Gate Dielectric for mm-Wave Applications
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  • Th3C-2: Tunable Dual-Band Coaxial Filter with Independent Band Control Using a Single Tuning Element Per Band
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  • Th3D-3: Characterization Approaches to Reduce Process Variation Dependencies for On-Wafer Power Calibration Transfer Devices in Bi/CMOS Technologies
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  • Th3F-3: AI-Assisted Template-Seeded Pixelated Design for Multi-Metal-Layer High-Coupling EM Structures: A Ku-Band 6G FR3 PA in 22nm FDX+
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  • Th3G-2: An 8–12.2GHz CMOS Low-Noise Amplifier with Partially Tail-Coupled Transformer and Large-Transistor Achieving 1.8dB Average NF
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  • WSG-1: Ku- and Ka-Band Beamformer with Antenna Arrays
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  • WSM-4: Will Light Communication be the coming 6G?
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  • WSL-2: 100–300GHz Power Amplifiers: Transistor Limits, Circuit Topologies
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  • WSA-4: Calibration-Free DSM Noise Suppression in Analog Frequency Synthesizers
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  • WSO-4: Design, Modeling and Control of Spin Silicon Qubits: from Confinement to Characterization
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  • WSJ-6: How to Ensure Flexible and Efficient Use of Spectrum, from Advanced 5G Doherty Power Amplifiers to Digitally Assisted Wideband PA for 6G BTS
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  • WSC-3: AI/ML Techniques Supporting the Design Automation of RF/mm-Wave Devices and Circuits
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  • WSK-5: BiCMOS Interconnections and Wafer-Level Packaging Technologies for Sub-THz Communication and Sensing Applications
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  • WSQ-3: What AI Algorithms Can Do, and What They Can’t
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  • WMI-4: Advanced Designs and Control of Superconducting Qubits
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  • WME-6: RF Breakdown Analysis and Thermal Management Within CST Studio Suite Environment
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  • WML-2: Fundamentals of Finite Element Method
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  • WMK-1: Ultra-Wide Bandgap Semiconductors for Next Generation High-Frequency Devices
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  • WMB-3: Cryogenic On-Wafer Noise Measurements Using a Cold-Attenuator Method
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  • WMM-9: Reciprocal Full-Duplex FMCW Radar Systems with Self-Interference Cancellation for High Accuracy Distributed Radar Networks
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  • WMA-3: The Role of Bondwire in Integrated Matching Networks in Power Amplifier Packaging
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  • WMH-6: Switchable and Tunable Ferroelectric Devices for Adaptive and Reconfigurable RF Circuits (TBC)
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  • WMC-5: Towards Large-Format 1.9THz Heterodyne Arrays Using a Planar Silicon-Micromachined Package
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  • WPTB1-2: NFC based wireless charging technology: Applications and Market trends
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  • WMR-6: MMIC LMBA Design
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  • Tu1A-1: A Fully Integrated Ka-Band FMCW Radar SoC with Baseband Accelerator for Vital Signs Monitoring in 40-nm CMOS
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  • Tu1A-4: A 94GHz 8Tx-16Rx Direct Center-Fed Active Array TD-MIMO FMCW Radar in 28-nm CMOS
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  • Tu1B-4: Hardware-Software Platform Enabling Joint Communication and Radar Sensing at 25GHz with 1GHz Bandwidth
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