Microwave Week 2020 Dashboard

Technical Session Audience Rating IMS

Displaying 501 - 550 of 2759
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  • Th3A-5: Integration of Millimeter-Wave Air Filled Cavities and Filters Using Vertically Aligned Carbon Nanotubes
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  • Th3B-3: AlN/GaN MIS-HEMT With GeN Gate Dielectric for mm-Wave Applications
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  • Th3C-4: Spin Wave Fast Tunable (SWiFT) Filter
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  • Th3D-4: Differential-Mode Characterization of Multi-Port Passives up to 170GHz Using Independent Single-Ended Two-Port Measurements
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  • Th3F-4: Dall-EM: Generative AI with Diffusion Models for New Design Space Discovery and Target-to-Electromagnetic Structure Synthesis
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  • Th3G-3: Broadband LNA with Dual-Resonance Matching Network with Capacitive Feedback for Improved Gain and Noise Figure Using 0.1-µm GaAs pHEMT Technology
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  • WSD-1: Leading-edge Process Technologies for Efficient Low-power Systems
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  • WSG-3: SiGe BiCMOS Process for SATCOM Applications
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  • WSH-1: Packaging: Then, Now and in the Future
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  • WSL-4: High-Power and Highly Efficient Power Amplifiers for D-Band Applications in Silicon
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  • WSI-2: Transceiver Techniques for FDD and Full-Duplex Wireless
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  • WSO-7: FDSOI Platform for Quantum Computing
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  • WSN-3: High-Density RF Solutions for Scaled Quantum Computing
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  • WSF-3: Challenging CMOS with Beamforming in the D-Band
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  • WSB-2: Integrated Beamforming: Where Directional Communication Meets Sensing for Seamless Connectivity and Detection
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  • WSK-8: Non-Contact On-Wafer Probing for mm-Wave and THz Metrology
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  • WSQ-7: Harnessing AI for Unlocking Novel RF Designs with Enhanced Performances
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  • WMI-7: Deep Microscopic Quantum Solvers for Spin Qubits Coupled to Complex Electromagnetic Environments
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  • WMG-3: Deep Traps in GaN-on-Silicon HEMT Devices and their Effects on RF Performance
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  • WML-7: Fast Multipole Method and its Applications
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  • WMK-3: The Role and Challenges of Ultra-Wide Bandgap Semiconductors in Next-Generation GaN HEMTs
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  • WMM-4: In-Band Full-Duplex Phased Array Circuits and Systems
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  • WMF-2: Measurement Accuracy Improvement in On-Wafer Measurement by RF Signal Detection Technique
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  • WMJ-2: Multiphysics Design and Analysis of Silver-Based Low-Emissivity Coating Technology for Energy Saving Sustainable Windows Applications
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  • WMN-3: 3D Modeling and Advanced Manufacturing of Conformal RF Packaging and Metasurface Antennas
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  • WMO-2: Towards Higher Accuracy in Vital-Sign Detection Using MIMO and Deep Learning
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  • RFB1-2: Spectral Analysis and Receiver Technology
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  • WMP-3: Design Challenges and Considerations for Reliable Rigid-Flex PCB up to 100GHz
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  • Tu1A-2: A D-Band 1Tx 4Rx Mid-Range Automotive CMOS FMCW Radar
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  • Tu1B-1: Double HOOK: A 140 GHz 15 Gb/s Reconfigurable 3-Level ASK Modulator with Constant Input Impedance for High-Speed Connectivity
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  • Tu1C-1: Field Trial of a Coastal Surveillance System Exploiting a Multistatic Multiband Photonics-Based Radar in Coherent Sparse MIMO Configuration
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  • Tu1D-2: A 7GHz High Efficiency GaN Doherty Power Amplifier Module for 5G Massive MIMO Base-Stations
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  • Tu1E-4: A Photonic Link at 4.7K with >1GHz Bandwidth Towards an Optical Quantum Computing Interface
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  • Tu1F-4: Power Receiving Circuit Design of Single-Ended Biological Capacitive WPT for Artificial Retina System
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  • Tu2A-6: Repeater-Aided Millimeter-Wave MIMO Radar for Improved Detection of Specular Targets
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  • Tu2C-2: On-Chip Photonic THz Emitter with Integrated InGaAs UTC-PD and 2×2 MPA Array on SiC Substrate
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  • Tu2D-2: An Integrated Doherty Power Amplifier Module Based on an Advanced GaN-on-Si HEMT Technology and a Wideband Power Combiner
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  • Tu2E-2: DeltaDPD: Exploiting Dynamic Temporal Sparsity in Recurrent Neural Networks for Energy-Efficient Wideband Digital Predistortion
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  • Tu2F-1: A Differential Rectifier Design Based on Impedance Splitting and Compression Technique for Achieving > 70% ηRF-DC Over 13dBm Input Dynamic Power Range
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  • Tu3A-1: Passive Subcutaneous Microwave Thermometry with Spatial Pattern Diversity
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  • Tu3B-1: 150GHz-Band Compact Phased-Array AiP Module for XR Applications toward 6G
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  • Tu3B-2: A 28GHz Beamformer Element Demonstration Using Monolithically Integrated GaN and Si Transistors in 300mm GaN-on-Si Technology
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  • Tu3D-1: A 4–240-GHz InP Variable-Gain Amplifier Using an Analog-Controlled Input Attenuation Network
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  • Tu3E-2: An Integrable Analog Domain Linearization Architecture for the Power Amplifiers in MIMO Systems
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  • Tu3F-5: AoA Sensing Enabled Reconfigurable Intelligent Surface
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  • Tu4A-4: Highly Sensitive Frequency- and Self-Injection-Locked Radar for Precise Vital Sign Detection
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  • Tu4B-5: Integrated Sensing and Communication Using Reconfigurable Intelligent Surface: Hardware, Ray-Tracing Demonstration, and Channel Measurement in the 6G Mid Band
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  • Tu4C-5: High-Efficiency VHF Polar and Doherty Amplifiers for Satellite Transponder Applications
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  • Tu4E-2: Predistortion of GaN Power Amplifier Transient Responses in Time-Division Duplex Using Machine Learning
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  • Tu4F-3: A Heterogeneous Transceiver in 0.1µm D-Mode GaAs and 65nm CMOS for SATCOM Phased Arrays
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