Microwave Week 2020 Dashboard

Technical Session Audience Rating IMS

Displaying 601 - 650 of 2742
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  • We1C-1: Multi-functional Ultrawideband BPFs with Reconfigurable Absorptive and Tunable Attenuation Characteristics
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  • We1E-1: Compact Ku-Band Diplexer with Additive Manufactured Multi-Material Dielectric Resonator Insets
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  • We1E-6: Ultra-Compact Surface-Mountable Air-Filled Coaxial Filter for 5G Applications
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  • We1H-2: A Ku-Band Input Harmonically Tuned Class-F GaAs MMIC Power Amplifier Achieving 28.4-dBm Psat and 56% Peak PAE
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  • We2B-2: A 28/39-GHz Reconfigurable Phased-Array Transmitter Front-End for 5G New Radio in a 65nm CMOS
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  • We2C-1: Direct Synthesis for High Selectivity Lowpass/Bandpass Co-Designed Filters with Independent Sub-Band Responses
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  • We2D-3: Equation-Based Solver for High-Performance SI CuMax Routing Within Pin Fields
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  • We2E-4: Rectangular Waveguide-Based CRLH Frequency Scanning Array Antenna Operating at W-Band
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  • We2G-5: A 220–280GHz InP Frequency Doubler with a Compact, Low-Loss Folded Marchand Balun
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  • We2H-4: A Compact Doubly Neutralized Ku Band Power Amplifier with 39% Peak PAE and 23 dBm Output Power in 22FDX+ EDMOS for 6G FR3
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  • We3B-5: A 71–76GHz Phased-Array Transmitter with Nested-Coupler-Based Phase Shifter in 65nm CMOS
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  • We3C-3: A DC-51.5 GHz Digital Step Attenuator with Sub-5 dB Insertion Loss and 3.1° RMS Phase Error
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  • We3D-3: Frequency-Query Enhanced Electromagnetic Surrogate Modeling with Edge Anti-Aliasing Pixelation for Bandpass Filter Inverse Design
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  • We3G-4: Low-Power and Low-Phase Noise 94-GHz and 107.2-GHz Differential Fundamental Oscillators in 70-nm GaAs pHEMT Technology
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  • We3H-5: A Ka-Band GaN Doherty Power Amplifier with High Efficiency Over a Fractional Bandwidth of 20.4%
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  • IF1-6: USB Type-C Receptacle Connector with Ceramic Insulator and Three-Layer Ground Plates
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  • IF1-12: Detection Algorithm for Waveguide Connection and Probe Contact States Based on Machine Learning in Frequency up to 1.1THz
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  • IF1-19: Accurate Large-Scale Motion Sensing With FMCW Radar Based on Range-Dependent DFT Technique
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  • IF1-23: A 28nm CMOS Almost All-Digital 0.5 to 4.0GHz Ultra-Wideband Ground Penetrating Radar for Lunar Surface Exploration
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  • IF1-28: High Power-Added-Efficiency AlGaN/GaN E-Mode HEMTs for Low-Supply-Voltage RF Terminal Applications
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  • IF1-34: A SiGe J-Band Gilbert Cell-Based Frequency Doubler and Power Amplifier Chain with 10dBm Output Power
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  • IF1-39: Predicting the Fidelity of Multiplexed Superconducting Qubit Readout with Multiphysics Numerical Methods
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  • IF1-45: Direction Finding for Software Defined Radios with Switched Uniform Circular Arrays
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  • Th1A-3: Evaluation of Stacked Structure for 160GHz End-Fire Type Compact Antenna-in-Package Considering Thermal Design
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  • Th1B-2: A Low-Loss, Wideband, 0–110GHz SPDT Using PCM RF Switches with Integrated CMOS Drivers
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  • Th1C-3: Ka-Band AFSIW Circuit-on-Substrate for Satellite Applications
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  • Th1D-4: Dielectric Measurements of Conventional and 3-D Printed Substrate Materials from 50GHz to 1.5THz Using Free-Space and TDS Methods
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  • Th1G-1: Broadband and Power-Efficient Optoelectronic Transmitter Monolithically Integrated in a SiGe BiCMOS ePIC Technology
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  • Th1G-5: A 0.9pJ/Bit 56Gb/s High-Swing Tri-Mode Wireline Transmitter with 6-Bit DAC Controlled Tailless-CML Driver and Impedance Calibration Loop
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  • Th2A-3: High Performance Waveguide Launcher in Interposer Package Technology for 77/79GHz Automotive 4D Imaging Radar
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  • Th2B-3: Frequency and Bandwidth Design of Millimeter Wave Thin-Film Lithium Niobate Acoustic Filters
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  • Th2C-3: Novel Reflective-Type Bandpass Filter with Simultaneously Integrated Tunable Attenuation and Phase Shifting Functions
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  • Th2D-4: Cross-Spectrum Phase Noise Measurements of 10-15-Level Stability Photonic Microwave Oscillators
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  • Th2F-4: 208GHz InP Distributed Amplifier with Combining Loss Reduction Techniques
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  • Th2G-4: A 71–86-GHz Receiver with 5-GHz IF Signal Bandwidth for E-Band Broadband Communication in 65-nm CMOS
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  • Th3A-2: A Reconfigurable Dielectric-Loaded Millimeter-Wave Waveguide Bandpass Filter Based on Customized 3D-Printing Vanadium Dioxide Filament
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  • Th3B-1: Deep Level Effects and Hot-Electron Reliability in Scaled GaN HEMTs
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  • Th3B-4: Influence of Double-Deck T-Gate Structures on Cut-Off Frequency in Al0.3Ga0.7N/AlN/GaN HEMTs
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  • Th3C-5: An Electrical Balance Duplexer Architecture without Inherent Insertion Loss Limitation
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  • Th3D-5: Cryogenic Microwave Probe Technology with High Thermal Insulation
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  • Th3F-5: On-Board Array Self-Calibration Using Amplitude-Only Proximal-Field Sensors and Machine-Learning-Based Phase Retrieval
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  • Th3G-4: A 140 GHz Low-Noise Amplifier in 45 nm RFSOI Based on a Joint-Noise-and-Gain-Optimized Embedding Network
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  • WSG-2: Multi-Orbit SATCOM Terminals for NTN and the Components that Make These Viable
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  • WSM-6: In-Package Silicon Photonic Transceivers for Next-Gen AI/HPC Systems
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  • WSL-2: 100–300GHz Power Amplifiers: Transistor Limits, Circuit Topologies
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  • WSA-7: Design and Performance Characterization of PLL-Based Chirp Generators for FMCW Radar Applications
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  • WSO-7: MOSFET Modeling with the sEKV Model for the Design of Cryo-CMOS Circuits
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  • WSJ-6: How to Ensure Flexible and Efficient Use of Spectrum, from Advanced 5G Doherty Power Amplifiers to Digitally Assisted Wideband PA for 6G BTS
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  • WSC-1: State-of-the-Art Microwave Device Modeling Enabled by Artificial Intelligence and Machine Learning
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  • WSK-3: THz Semiconductor Electronics
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