Microwave Week 2020 Dashboard

Technical Session Audience Rating IMS

Displaying 601 - 650 of 2759
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  • WSP-4: Advanced RFIC Techniques using Non-Uniform Sampling and Time-Approximation Filters
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  • AIB1-3: Scientific Machine Learning: Principles, Methods and Applications
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  • WME-1: Emerging MHz-Through-THz Structures and Techniques that Challenge the Electromagnetic Modeling and Simulation Community
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  • WMG-8: A GaN Technology to Meet Future Radio Requirements
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  • WMD-3: Quantum Control of Bulk Acoustic Phonons
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  • WMK-6: Ga₂O₃ FETs for Future Power and Harsh Environment Electronics
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  • WMM-8: Gallium Nitride: A Promising Technology for Fully Integrated Transceiver Front-End
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  • WMF-8: Approaches to Carry Out Well-Documented Measurements for Active Devices Using Varying Calibration Methodologies
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  • WMH-1: Silicon Micro-Machined Liquid Crystal Tunable Microwave and mm-Wave Devices
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  • WMN-8: Electromagnetic Modeling and Simulation Challenges for Silicon Interposers in 2.5D/3D IC Chip Design
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  • WMO-8: In-Cabin Radar Sensing
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  • WMR-1: LMBA Basics
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  • WMQ-3: Advanced GaN HEMT Characterization and Modeling Techniques
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  • Tu1A-3: An 120GHz 8×8 FMCW MIMO Radar System With 90° Biaxial FOV for Autonomous Navigation of UAVs in 3-D Space
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  • Tu1B-2: A V-Band OOK Transmitter with 14.5Gbps Data Rate and 11.1% DC-to-RF Efficiency in 65nm CMOS
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  • Tu1C-3: Multi-Channel Integrated Microwave Photonic Transmitter for Radio-over-Fiber Systems
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  • Tu1E-1: A Cryogenic Front-End Module Applied to Readout Two-Qubits with FDM Technology in Superconducting Quantum Computing System
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  • Tu1E-5: A Demonstration of Multi-Floating Superconducting Qubits on a 3D Flip-Chip Platform with TLS Loss Mitigation via Apertures
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  • Tu2A-1: Frequency-Spatial Adaptive Digital Beamforming Technique for Range-Angle Decoupling With High-Resolution MIMO Radar
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  • Tu2B-3: Body-Resonance Human Body Powering
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  • Tu2C-4: High Sensitivity W-Band LEKID-Based On-Chip Polarimeter
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  • Tu2D-3: System-in-Package Doherty Power Amplifier Using Hybrid LDMOS/GaN Line-Up for 5G Macro Driver Applications
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  • Tu2E-4: Recurrent Neural Network Modeling of Radio Frequency Amplifiers for System-Level Simulation and Design
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  • Tu2F-3: 1.9GHz–4.1GHz CMOS Rectifier with Over 48% Efficiency Using Inductive Feedback and CRT Reduction for Beamforming WPT
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  • Tu3A-3: Numerical Testbench for a priori Uncertainty Estimation of Dielectric Spectroscopy in Organ-on-Chip Devices
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  • Tu3B-1: 150GHz-Band Compact Phased-Array AiP Module for XR Applications toward 6G
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  • Tu3B-4: Body Proximity Detection Based on Reflections of Multi-Antenna Uplink Transmission from a 5G Mobile Handset
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  • Tu3D-3: A 280GHz Sub-Harmonic Injection Locked Oscillator in 45nm CMOS PD SOI
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  • Tu3E-4: A GaAs HBT Doherty Power Amplifier with 31dBm Linear Output Power and 43% Efficiency by Using Dynamic IM3 Cancellation
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  • Tu4A-1: Through-the-Wall Concurrent Vital Signs Monitoring of Three Subjects Using Single-Channel CW Radar and Independent Component Analysis
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  • Tu4B-2: A 2:1 Bandwidth 3–6GHz Dual-Polarized True-Time-Delay Based Reconfigurable Intelligent Surface (RIS)
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  • Tu4C-2: Planar Low-Loss Ultra-Wideband Coaxial-Less Balun and 4-Way Combiner for High-Power Applications
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  • Tu4D-1: Ultrawideband Vector Modulators for Next-Gen Wireless Networks in the 200–480GHz Range
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  • Tu4E-5: Neural Network Based Nonlinear Forward Model Identification for Digital MIMO Arrays Under Load Modulation
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  • Tu4F-5: An Interleaved 1×8 Dual-Polarized L-band Phased Array with Digital Transmit/Receive Beamforming Using RFSoC
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  • We1B-5: A C-Band High-Precision Amplitude-Phase Control Multi-Functional Chip with Symmetric Polyphase Filter and X-Type Attenuator
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  • We1D-2: Electromagnetic Emission Simulation of Radio-Frequency Circuits Using Direct Domain Decomposition Solver
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  • We1E-4: Coupling Matrix Reconfiguration Aided with a Start System Based on Simultaneous Diagonalization
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  • We1G-5: A DC-to-170GHz Direct-Coupled Mixer Achieving 47dB LO-RF Isolation in 250nm InP DHBT Technology
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  • We1H-5: An X-Band Low-Voltage GaN HEMT Stacked Power Amplifier Operating in Class-J with Active Second Harmonic Injection
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  • We2B-4: A 16.2-to-22.2-GHz Phased-Array Receiver with -60-to-85°C Simultaneously Gain and NF Temperature Compensation Supporting 24Gb/s 64QAM Modulation
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  • We2C-4: Extraction of Coupling Matrix for Bandpass Filters Based on Magnitude of S-Parameters
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  • We2E-1: 50-Way W-Band All Waveguide Radial Combiner Design
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  • We2G-3: A D-Band ×15 Frequency Multiplier Chain in 45nm SiGe BiCMOS for Board-Level Packaged Array Applications
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  • We2H-2: A High-Efficiency GaAs HBT Power Amplifier for 6G FR3 Applications
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  • We3B-2: A 60-GHz RadCom Down-Converter in 22-nm CMOS FDSOI for Short-Range Hand Gesture Sensing and High-Data-Rate Proximity Communication
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  • We3B-6: A 71–76GHz Four-Element Phased-Array Receiver with Compact Footprint in 65-nm CMOS
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  • We3C-5: An Ultra-Compact D-Band SIW Filter with Multifunction Transitions to Coplanar Input/Output
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  • We3G-1: A 7.8–11.9GHz Quad-Mode Class-F2,3 VCO with Multi-Stage Cross-Shared Common-Mode Path Achieving -131.9dBc/Hz 1-MHz Phase Noise and 201.8dBc/Hz FoMT
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  • We3H-2: A Broadband Doherty-like Load-Modulated Balanced Amplifier with an Optimized Impedance Transformation Ratio in InGaP/GaAs HBT Process for Handset applications
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