Microwave Week 2020 Dashboard

Technical Session Audience Rating IMS

Displaying 401 - 450 of 2742
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  • Tu1C-4: A 22nm CMOS 15–25GHz Dual-Differential Driver for RF Silicon Photonic Front-End
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  • Tu1E-1: A Cryogenic Front-End Module Applied to Readout Two-Qubits with FDM Technology in Superconducting Quantum Computing System
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  • Tu1F-1: Transforming 5G Wireless Power Harvesting: A Broadbeam Equiconvex Lens-Integrated mmWave Harvester for Smart City Environments
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  • Tu2A-2: High-Resolution 3D Radar Imaging with Silicon-Micromachined Sub-THz Frequency-Diverse Antennas
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  • Tu2B-5: Intelligent Smoke Detection: State Recognition and Monitoring of Heating Processes Using FMCW Radar and Data-Driven Algorithms
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  • Tu2C-4: High Sensitivity W-Band LEKID-Based On-Chip Polarimeter
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  • Tu2D-4: 10 Watt CW Power Handling SPDT RF Switch Using E-Mode p-GaN Dual-Gate HEMT Technology
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  • Tu2E-5: Calibration of Wideband Multiport Junction Receivers Using Memory-Polynomial-Informed Neural Network
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  • Tu2F-4: 27-GHz Silicon-Integrated Rectenna Based on Novel Multilayer Substrate
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  • Tu3A-4: A 0.3dB-NF SiGe LNA Array for 10.5T Multi-Channel MRI Receivers
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  • Tu3B-1: 150GHz-Band Compact Phased-Array AiP Module for XR Applications toward 6G
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  • Tu3B-4: Body Proximity Detection Based on Reflections of Multi-Antenna Uplink Transmission from a 5G Mobile Handset
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  • Tu3D-4: 300-GHz-Band Single-Balanced Resistive Mixer Module in 60-nm InP HEMT Technology with LO Leakage Suppressing Function
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  • Tu3F-1: KEYNOTE: Driving Innovation in the RF and Microwave Industry Through Radio Astronomy
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  • Tu4A-2: Asynchronous Space-Time Coding Direct Antenna Modulation-Enabled Automated Beam-Scanning Multi-Target Vital Sign Radar Sensing
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  • Tu4B-3: Chirp Sequence-Based Beamwidth Control in a Reconfigurable Intelligent Surface
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  • Tu4C-3: Continuous Current Mode Class-F Power Amplifier: A Solution for Bandwidth Extension in Low Breakdown Voltage Applications
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  • Tu4D-2: Sub-THz Phase Shifter Using a Photoconductive Solid-State Plasma Evanescent-Mode Waveguide Switched Stub
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  • Tu4E-5: Neural Network Based Nonlinear Forward Model Identification for Digital MIMO Arrays Under Load Modulation
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  • We1B-2: A 1.53-mm² Fully-Integrated Wi-Fi 7 Front-End Module with 1.65-dB NF and 41.9% FBW in 0.25-µm GaAs p-HEMT Technology
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  • We1B-6: A 10-GHz Localized-LO-Phase-Shifting Phased-Array Transmitter
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  • We1D-5: A Finite Element Method to Model Transmission Lines with Various Rough Conductor Surfaces up to 110GHz
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  • We1E-5: Band-Pass Filter Based on Stacked Metal Plates in V-Band Waveguide Technology
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  • We1H-1: KEYNOTE: LNA and Power Amplifiers for Operation up to 100GHz
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  • We2B-2: A 28/39-GHz Reconfigurable Phased-Array Transmitter Front-End for 5G New Radio in a 65nm CMOS
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  • We2C-2: Novel Synthesis Method for Wideband Filter with Additional Insertion Phase
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  • We2D-4: A Power-Efficient Plasma Jet Line Enabled by Dielectric Anapole Resonator Technology
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  • We2E-6: Optimizing Material and Shape of 3D-Printed Waveguide Terminations
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  • We2H-1: Efficient InGaP/GaAs HBT Differential Power Amplifier Using a New Adaptive Cross-Capacitor Bias Circuit for 6G FR3 Handset Applications
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  • We2H-5: A 24GHz Power Amplifier with a Switching Output Combiner for a Dual-Mode MIMO Radar System
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  • We3B-5: A 71–76GHz Phased-Array Transmitter with Nested-Coupler-Based Phase Shifter in 65nm CMOS
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  • We3C-4: A 10-17 GHz Continuously Tunable CMOS Filter with FlexibleBandwidth Control Based on Mode-Switching Inductors
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  • We3D-5: Knowledge-based Extrapolation of Neural Network Model for Transistor Modeling
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  • We3G-5: A 134GHz High Efficiency High Power Fundamental Oscillator in 16nm p-FinFET with 12dBm Output Power and 6.5% DC-to-RF Efficiency
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  • IF1-1: Ku-Band Multi-Functional Bandpass Filtering Isolators (BPFIs) Using GaAs Coupled-Line-Based Unilateral Frequency-Selective Stages
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  • IF1-7: A TSPC mm-Wave Frequency Divider with up to 50GHz Input Frequency in 12nm FinFET Bulk CMOS
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  • IF1-13: A Wideband TIA-Driver Unit in 22-nm CMOS FDSOI for Integrated Microwave Optoelectronic Oscillators
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  • IF1-20: A THz Attenuator Based on Voltage-Tunable Whispering Gallery Mode Resonator
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  • IF1-23: A 28nm CMOS Almost All-Digital 0.5 to 4.0GHz Ultra-Wideband Ground Penetrating Radar for Lunar Surface Exploration
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  • IF1-29: GaN Trap Model Extraction Based on MHz Load-Line Measurements
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  • IF1-35: An Effective Basis Function Generation Structure for Digital Pre-Distortion in Wideband Scenarios
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  • IF1-40: TCN-DPD: Parameter-Efficient Temporal Convolutional Networks for Wideband Digital Predistortion
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  • IF1-47: A Body-Floating G-Band Frequency Doubler for Astronomical Receiver in 90-nm CMOS Process
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  • Th1A-3: Evaluation of Stacked Structure for 160GHz End-Fire Type Compact Antenna-in-Package Considering Thermal Design
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  • Th1B-2: A Low-Loss, Wideband, 0–110GHz SPDT Using PCM RF Switches with Integrated CMOS Drivers
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  • Th1C-4: Twisted-Shaped Millimeter-Wave Hybrid Couplers in 150nm GaN Technology for 5G Applications
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  • Th1D-5: A Novel Q-Choked Sapphire Sandwiched Resonator for Wide-Band Measurements of Flat Dielectric Samples
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  • Th1G-2: DC-to-89-GHz AMUX-based IQ Modulator in 250-nm InP HBT Technology for Multiplexing-DAC Subsystem
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  • Th1G-5: A 0.9pJ/Bit 56Gb/s High-Swing Tri-Mode Wireline Transmitter with 6-Bit DAC Controlled Tailless-CML Driver and Impedance Calibration Loop
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  • Th2A-4: First Demonstration of Highly Scaled RF GaN-on-Si Dielets Embedded in Glass Interposer
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